探索 4H-SiC MOSFET 的高温可靠性：高 K 栅极电介质材料的比较研究

IF 1.6 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Transactions on Electrical and Electronic Materials Pub Date : 2023-12-20 DOI:10.1007/s42341-023-00497-x

M. V. Ganeswara Rao, N. Ramanjaneyulu, Sumalatha Madugula, N. P. Dharani, K. Rajesh Babu, Kallepelli Sagar

引用次数: 0

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本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

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来源期刊

Transactions on Electrical and Electronic Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

4.30

自引率

0.00%

发文量

期刊介绍： The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities.The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials.Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.