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Improved B1 distribution of an MRI RF coil element using a high-impedance-surface shield 采用高阻抗表面屏蔽改善MRI射频线圈元件的B1分布
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107765
Zhichao Chen, K. Solbach, D. Erni, A. Rennings
{"title":"Improved B1 distribution of an MRI RF coil element using a high-impedance-surface shield","authors":"Zhichao Chen, K. Solbach, D. Erni, A. Rennings","doi":"10.1109/GEMIC.2015.7107765","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107765","url":null,"abstract":"In this paper we propose an approach to improve the B1 distribution in terms of homogeneity and penetration depth of a coil element by utilizing a high impedance surface (HIS) as the RF shield for 7 T magnetic resonance imaging (MRI). The transverse magnetic field distribution in the case of a HIS and a perfect electrical conductor (PEC) being the shielding plate are compared for different separation distances from the dipole coil to the shielding plate. As the PEC shield is adjacent to the dipole coil, an undesired surface current is induced on the PEC shielding plate by the dipole coil, whereas the induced surface current on the HIS shield is sufficiently suppressed due to the high surface impedance. As a result, the dipole coil with a HIS shield exhibits a broader and stronger field distribution, and thus achieves an improvement on the transverse B1 homogeneity as well as the penetration depth. As the separation distance increases, the impact of the induced current is weakened and thus variations on the field distribution with different shielding scenarios (HIS and PEC) are reduced. The proposed approach has been validated by numerical simulations and experimental measurements, which show a good agreement.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128683891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 60 GHz 24.5 dBm wideband distributed active transformer power amplifier on 250 nm BiCMOS 基于250nm BiCMOS的60ghz 24.5 dBm宽带分布式有源变压器功率放大器
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107772
J. Leufker, C. Carta, F. Ellinger
{"title":"A 60 GHz 24.5 dBm wideband distributed active transformer power amplifier on 250 nm BiCMOS","authors":"J. Leufker, C. Carta, F. Ellinger","doi":"10.1109/GEMIC.2015.7107772","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107772","url":null,"abstract":"This paper presents a 60 GHz differential single-stage power amplifier IC with extrapolated 24.5 dBm output power and 12.9 % power added efficiency at 1 dB compression. The circuit is based on distributed amplification with four parallel cascode stages and power combination with a transformer. It shows a 3 dB gain bandwidth of 12 GHz from 51 GHz to 63 GHz with maximum power gain of 12.3 dB at 58 GHz. It consumes 600 mA from a 3.3 V supply and was fabricated in a 250 nm SiGe BiCMOS technology with peak fT and fmax of 180 GHz and 220 GHz, respectively. The high linearity of the circuit exceeds the capabilities of the available measurement instrumentation. A maximum output power of 16.5 dBm has been observed; extrapolation from the measured data and matching simulated performance allow predicting an output power of 24.5 dBm at 1 dB compression. This value, to the best knowledge of the authors, would be the highest reported to date for 60 GHz silicon power amplifiers.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123977907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Complexity of DPD linearization in the full RF-band for a WiMAX power amplifier WiMAX功率放大器全rf频段DPD线性化的复杂性
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107740
N. Wolff, O. Bengtsson, W. Heinrich
{"title":"Complexity of DPD linearization in the full RF-band for a WiMAX power amplifier","authors":"N. Wolff, O. Bengtsson, W. Heinrich","doi":"10.1109/GEMIC.2015.7107740","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107740","url":null,"abstract":"In this paper, the influence of channel frequency in the RF-band on digital predistortion (DPD) is investigated empirically. A class-AB GaN-HEMT power amplifier targeting the 3.5 GHz band for WiMAX is used with a 20 MHz OFDM signal. It is found that frequency dependent memory effects in the band have a strong impact on the amount of memory taps needed for the DPD predistorter model. The overall characteristic is dominated by the non-linear behavior of the transistor, the memory effects, and the IQ imbalance introduced by the low cost modulation hardware. Using DPD models with memory that can handle IQ imbalance the EVM is improved by at least 12 dB in backed-off operation.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124293298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
D-Band digital phase shifters for phased-array applications d波段数字移相器相控阵应用
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107789
D. Muller, S. Diebold, S. Reiss, H. Massler, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass
{"title":"D-Band digital phase shifters for phased-array applications","authors":"D. Muller, S. Diebold, S. Reiss, H. Massler, A. Tessmann, A. Leuther, T. Zwick, I. Kallfass","doi":"10.1109/GEMIC.2015.7107789","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107789","url":null,"abstract":"This paper presents three different D-Band (110 - 170GHz) phase shifters for high-bandwidth communication and radar applications. The proposed phase shifters offer phase shifts of 180°, 90° and 45° and show only very little amplitudeand phase-error over the full D-Band. Furthermore based on the measurement results of the individual phase shifters the group factor of an eight element phased array system was calculated. The results were used to verify the suitability of such phase shifters as feeding elements in phased array systems. It is shown that these phase shifters are a good choice for high bandwidth systems and offer bandwidths between 25 and 50GHz, depending on the maximum required tilt angle of the array.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121625245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Planar cross-polarized transition to a circular waveguide feed for a 61 GHz dielectric antenna 61 GHz介电天线圆波导馈源的平面交叉极化过渡
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107778
W. Stein, M. Deckelmann, A. Oborovski, M. Vossiek
{"title":"Planar cross-polarized transition to a circular waveguide feed for a 61 GHz dielectric antenna","authors":"W. Stein, M. Deckelmann, A. Oborovski, M. Vossiek","doi":"10.1109/GEMIC.2015.7107778","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107778","url":null,"abstract":"This paper presents a novel concept for a planar cross-polarized transition to a 61 GHz dielectric lens antenna. The transition to the circular waveguide antenna feed consists of a combination of a microstrip line and a slot line. Each of these planar waveguides excites the H11 mode in the circular waveguide with a 90± polarization angle to one another. The developed double layer transition topology was realized on a Rogers 5880 substrate employing the microstrip line on the top and the slot line on the bottom layer. The concept was implemented and tested on a circular waveguide-fed dielectric lens antenna for a 61 GHz radar system. Experimental results show a transition loss of around -2 dB for the microstrip and -3 dB for the slot line feed with excellent crosstalk suppression greater than 40 dB for the two polarization channels. The bandwidth of the built crosspolarized transition is greater than 10 GHz. The results prove that the novel transition concept is very well suited for compact, broadband and low cost polarimetric millimeter-wave radar systems.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130712779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A miniaturized very low-power vector modulated CMOS phase shifter for wireless receivers 一种用于无线接收机的小型化极低功耗矢量调制CMOS移相器
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107823
Tina Kastenhuber, Juergen Roeber, Andreas Baenisch, G. Fischer, R. Weigel
{"title":"A miniaturized very low-power vector modulated CMOS phase shifter for wireless receivers","authors":"Tina Kastenhuber, Juergen Roeber, Andreas Baenisch, G. Fischer, R. Weigel","doi":"10.1109/GEMIC.2015.7107823","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107823","url":null,"abstract":"This paper presents and analyses a phase shifter for diversity receivers, which modulates the I-/Q-vector in the constellation diagram. The system consists of a three stage programmable gain amplifier (PGA) chain in both branches. The design covers the full phase range of 360°. Each stage can be programmed to amplify the incoming signal between 19 dB and 63 dB with a centre frequency of 3 MHz. The radio frequency (RF) signal is down-converted to an intermediate frequency (IF) of 5 MHz, where phase shifting is done. The circuit is intended for an automotive satellite radio receiver in S-and L-band. Thus, demand automotive requirements have to be fulfilled. The supply voltage is 1.8V. Compared to other phase shifters, the power consumption of 2.7mW is highly energy-efficient. This system includes a constant gm-source and a biasing circuit. All requirements are verified in post-layout Corner and Monte-Carlo analysis using Virtuoso and WiCkeD. The design only takes 0.116mm2 of silicon area in a 150- nm CMOS technology.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133519269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-technology design of an integrated MEMS-based RF oscillator using a novel silicon-ceramic compound substrate 基于新型硅陶瓷复合衬底的集成mems射频振荡器的多技术设计
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107839
D. Podoskin, K. Bruckner, M. Fischer, S. Gropp, D. Krausse, J. Nowak, M. Hoffmann, J. Muller, R. Sommer, M. Hein
{"title":"Multi-technology design of an integrated MEMS-based RF oscillator using a novel silicon-ceramic compound substrate","authors":"D. Podoskin, K. Bruckner, M. Fischer, S. Gropp, D. Krausse, J. Nowak, M. Hoffmann, J. Muller, R. Sommer, M. Hein","doi":"10.1109/GEMIC.2015.7107839","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107839","url":null,"abstract":"In this paper, an approach towards the realization of a hybrid MEMS-CMOS RF oscillator module using the novel silicon-ceramic (SiCer) compound substrate technology is described. Piezoelectric aluminium-nitride MEMS resonators with quality factors Q up to 2,200 and resonant frequencies of 240, 400 and 600 MHz have been investigated as frequency-selective elements. For RF-compatible hybrid-integrated assembly and packaging, the SiCer compound substrate has been adapted, promising an efficient integration of both, microelectronic and micromechanical devices, on a single carrier substrate. Multiphysical circuit design and simulations using parametrized behavioural MEMS models have been carried out, indicating stable oscillator operation at the design frequency. As one prospective application, such an oscillator module could form part of a compact and power-efficient reconfigurable RF transceiver frontend in SiCer technology, e.g., for mobile communications.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133247140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
New output network design approach for voltage-mode class-S PAs 电压型s级PAs输出网络设计新方法
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107739
D. Al-Mozani, A. Wentzel, W. Heinrich
{"title":"New output network design approach for voltage-mode class-S PAs","authors":"D. Al-Mozani, A. Wentzel, W. Heinrich","doi":"10.1109/GEMIC.2015.7107739","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107739","url":null,"abstract":"This paper presents a new approach for realizing the output network of class-S power amplifiers in the 900MHz band. The idea is to use bond-wires instead of lumped inductors thus improving Q factor and broadband impedance termination at the output of the switching stage. A filter made of bond-wires and planar capacitor was designed and fabricated. Measurements were also performed in a class-S PA module and compared to the convention. Measurements of the proposed network were performed and compared with filter solution using SMD elements.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115022629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetron injection gun for a 238 GHz 2 MW coaxial-cavity gyrotron 238 GHz 2 MW同轴腔回旋管的磁控管注入枪
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107803
J. Franck, I. Pagonakis, K. Avramidis, G. Gantenbein, S. Illy, M. Thumm, J. Jelonnek
{"title":"Magnetron injection gun for a 238 GHz 2 MW coaxial-cavity gyrotron","authors":"J. Franck, I. Pagonakis, K. Avramidis, G. Gantenbein, S. Illy, M. Thumm, J. Jelonnek","doi":"10.1109/GEMIC.2015.7107803","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107803","url":null,"abstract":"Karlsruhe Institute of Technology (KIT) has started the development of gyrotrons for the first demonstration fusion power plant DEMO. A coaxial-cavity 238 GHz 2 MW gyrotron design is under investigation. After having obtained an initial cavity design, one focus of current studies is the associated triode-type magnetron injection gun (MIG). Constraints, design approaches and an initial gun design are presented. An outlook on further investigations is given.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117325586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A circuit technique to compensate PVT variations in a 28 nm CMOS cascode power amplifier 一种补偿28nm CMOS级联码功率放大器PVT变化的电路技术
2015 German Microwave Conference Pub Date : 2015-03-16 DOI: 10.1109/GEMIC.2015.7107770
Patrick Obmann, J. Fuhrmann, J. Moreira, H. Pretl, A. Springer
{"title":"A circuit technique to compensate PVT variations in a 28 nm CMOS cascode power amplifier","authors":"Patrick Obmann, J. Fuhrmann, J. Moreira, H. Pretl, A. Springer","doi":"10.1109/GEMIC.2015.7107770","DOIUrl":"https://doi.org/10.1109/GEMIC.2015.7107770","url":null,"abstract":"This paper presents a method to compensate CMOS process-, voltage-, and temperature (PVT) variations in a linear two-stage RF power amplifier (PA). The proposed circuit technique mitigates bias point fluctuations caused by non-controllable uncertainties like wafer-dependent electron mobility, increasing die temperature due to substrate self-heating, or supply voltage deviations. A scaled PA replica cascode circuit and a controlled current mirror form a feedback loop which stabilizes the PA operation point over a wide range of PVT variations. As demonstrated by simulations and verified by measurements, the PA operating conditions have been stabilized over a temperature range of 90°C and more than 0.5V supply change. The proposed biasing scheme has been implemented using a 28nm standard CMOS process. The PA is able to deliver more than one Watt of RF output power at a peak power-added efficiency (PAE) of 33% at 1.8GHz center frequency operation.","PeriodicalId":229585,"journal":{"name":"2015 German Microwave Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116446444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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