采用高阻抗表面屏蔽改善MRI射频线圈元件的B1分布

Zhichao Chen, K. Solbach, D. Erni, A. Rennings
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引用次数: 8

摘要

在本文中,我们提出了一种利用高阻抗表面(HIS)作为7 T磁共振成像(MRI)的射频屏蔽来改善线圈元件在均匀性和穿透深度方面的B1分布的方法。比较了以理想导体(PEC)为屏蔽板和以HIS为屏蔽板时,偶极子线圈与屏蔽板之间不同距离下的横向磁场分布。由于PEC屏蔽与偶极线圈相邻,偶极线圈在PEC屏蔽板上产生不希望的表面电流,而由于高表面阻抗,HIS屏蔽上的感应表面电流得到充分抑制。结果表明,带HIS屏蔽的偶极子线圈具有更宽、更强的场分布,从而改善了横向B1均匀性和穿透深度。随着隔离距离的增加,感应电流的影响减弱,从而减小了不同屏蔽方案(HIS和PEC)下磁场分布的变化。数值模拟和实验结果验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved B1 distribution of an MRI RF coil element using a high-impedance-surface shield
In this paper we propose an approach to improve the B1 distribution in terms of homogeneity and penetration depth of a coil element by utilizing a high impedance surface (HIS) as the RF shield for 7 T magnetic resonance imaging (MRI). The transverse magnetic field distribution in the case of a HIS and a perfect electrical conductor (PEC) being the shielding plate are compared for different separation distances from the dipole coil to the shielding plate. As the PEC shield is adjacent to the dipole coil, an undesired surface current is induced on the PEC shielding plate by the dipole coil, whereas the induced surface current on the HIS shield is sufficiently suppressed due to the high surface impedance. As a result, the dipole coil with a HIS shield exhibits a broader and stronger field distribution, and thus achieves an improvement on the transverse B1 homogeneity as well as the penetration depth. As the separation distance increases, the impact of the induced current is weakened and thus variations on the field distribution with different shielding scenarios (HIS and PEC) are reduced. The proposed approach has been validated by numerical simulations and experimental measurements, which show a good agreement.
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