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2008 17th IEEE International Symposium on the Applications of Ferroelectrics最新文献

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Effect of sintering temperature on dielectric properties of tungsten doped barium titanate 烧结温度对掺钨钛酸钡介电性能的影响
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693887
S. Devi, Sameer H. Jain, A. Jha
{"title":"Effect of sintering temperature on dielectric properties of tungsten doped barium titanate","authors":"S. Devi, Sameer H. Jain, A. Jha","doi":"10.1109/ISAF.2008.4693887","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693887","url":null,"abstract":"In the present work, samples of compositions BaTi1¿xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200°C, 1250°C and 1300°C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with sintering temperature and duration have been studied. Particle size of the studied samples has been found to change with sintering temperature and duration. Dielectric properties of the samples have been studied as a function of temperature and frequency. The variation of dielectric constant (¿r) with temperature shows that the samples undergo a diffuse type ferro - paraelectric phase transition. The dielectric constant is found to increase with increasing temperature and duration. Variation of dielectric loss (tan¿) with temperature have also been measured. Further, diffusivity of the samples have been calculated and is reported in this paper.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122114220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MI017 - Integrated microwave frequency tunable bandpass filter using barium strontium titanate varactors MI017 -集成微波频率可调带通滤波器使用钡钛酸锶变容
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693757
P. G. Lam, Zhiping Feng, V. Haridasan, M. Steer, A. Kingon, J. Maria
{"title":"MI017 - Integrated microwave frequency tunable bandpass filter using barium strontium titanate varactors","authors":"P. G. Lam, Zhiping Feng, V. Haridasan, M. Steer, A. Kingon, J. Maria","doi":"10.1109/ISAF.2008.4693757","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693757","url":null,"abstract":"A bandpass filter for the frequency range of 6¿9 GHz, based on tunable interdigital BST varactor is presented. This paper reports the processing steps required to obtain a functional and integrated bandpass filter, which include: via drilling and filling purpose, dielectric deposition, chromium/gold deposition and copper electroplating. Microwave measurements reveal an insertion loss range between 7¿11 dB, a 20 dB rejection band, a bandwidth of less than 500 MHz, and 1.73 GHz of frequency tunability.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"470 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128354446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modelling of piezoelectric properties of 0.67PMN-0.33PT ceramics with differing degree of texturing 不同变形程度0.67PMN-0.33PT陶瓷的压电特性建模
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693839
E. Sitalo, V. Aleshin, I. Raevski
{"title":"Modelling of piezoelectric properties of 0.67PMN-0.33PT ceramics with differing degree of texturing","authors":"E. Sitalo, V. Aleshin, I. Raevski","doi":"10.1109/ISAF.2008.4693839","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693839","url":null,"abstract":"Modelling of dielectric, piezoelectric and elastic properties of 0.67PMN¿0.33PT ceramic composition with differing degree of texturing have been carried out within the effective media approach. The full sets of dielectric, piezoelectric and elastic coefficients have been calculated for various distributions of crystallites orientations using the data for single domain crystals and crystals with the engineered domain structure [1,2]. The simple models of the polarization process for isotropic ceramics with random orientation of crystallites are discussed. The dependence of the calculated dielectric, piezoelectric and elastic coefficients on the degree of texturing appears to be substantially nonlinear. The results of simulation are compared with the experimental data for both isotropic and textured 0.67PMN-0.33PT ceramics. This study is supported by the Russian Foundation for Basic Research (grant 07-02-12165 OFI) and the grant of the Federal Southern University No 05/6-180.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130442814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Paper ID number CH031 role of misfit dislocations in ferroelectric thin films 失配位错在铁电薄膜中的作用
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693935
M. Arredondo, V. Nagarajan, A. Petraru, H. Kohlstedt, M. Saunders, N. Browning
{"title":"Paper ID number CH031 role of misfit dislocations in ferroelectric thin films","authors":"M. Arredondo, V. Nagarajan, A. Petraru, H. Kohlstedt, M. Saunders, N. Browning","doi":"10.1109/ISAF.2008.4693935","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693935","url":null,"abstract":"We present a systematic study on the nanoscale chemistry around misfit dislocations (MDs) in ferroelectric thin films, to attribute their effects on the reported degradation of physical properties.[1] The quality of the interface was examined using High Resolution Transmission Electron Microscopy (HRTEM) investigations, acquired on the following model heterostructures -(a) PbZr0.52Ti0.48O3 (PZT 52/48) with a very large misfit, and hence high density of dislocations, (b) an excellent lattice-matched PbZr0.20Ti0.80O3 (PZT 20/80) and (c) BaTiO3 (BTO). All three films were deposited on SrRuO3 buffered SrTiO3. We map the chemical changes across the interfaces, around the MDs via Energy Dispersive X-Ray Spectroscopy (EDS) and Energy-Filtered TEM (EFTEM). In the case for an interface with high density of MDs there is a significant mixing of chemical species; particularly Pb from the PZT is found in the electrode layer. Hence, the severe lattice distortion at the core of the dislocations have a profound impact on the local chemistry; by changing electronic structure as well as chemical species at the atomic interface. We postulate that these local chemical changes drastically affect important physical properties such as, the polarization, piezoelectric and the dielectric response.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"237 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133965173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear effects in thin-film ferroelectric transmission lines at microwave frequencies 微波频率下薄膜铁电传输线的非线性效应
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693758
J. Booth, N. Orloff, J. Mateu
{"title":"Nonlinear effects in thin-film ferroelectric transmission lines at microwave frequencies","authors":"J. Booth, N. Orloff, J. Mateu","doi":"10.1109/ISAF.2008.4693758","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693758","url":null,"abstract":"In order to investigate the switching dynamics of ferroelectric materials at nanosecond time scales, we have measured the nonlinear response of ferroelectric-loaded transmission lines at microwave frequencies. We analyzed the third harmonic and intermodulation products produced by planar transmission lines incorporating ferroelectric thin films, and obtained the rf nonlinear capacitance C(Vrf). We also directly measured the change in capacitance of the same structures due to a dc applied voltage, C(Vdc). By comparing these two experimentally-determined nonlinear capacitances, we are able to directly determine if the mechanisms responsible for the capacitance tuning in these materials are able to responsd on nanosecond time scales.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130955740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A reliability study on high-breakdown integrated ferroelectric capacitors. 高击穿集成铁电电容器可靠性研究。
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693921
A. Roest, K. Reimann, L. van Leuken-Peters, M. Klee, R. Mauczok, W. Keur
{"title":"A reliability study on high-breakdown integrated ferroelectric capacitors.","authors":"A. Roest, K. Reimann, L. van Leuken-Peters, M. Klee, R. Mauczok, W. Keur","doi":"10.1109/ISAF.2008.4693921","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693921","url":null,"abstract":"Capacitors, with a capacitance density of up to 100 nF/mm2 and a dielectric constant of 950¿1600 were produced by optimizing the ferroelectric material combined with stacking. Accelerated lifetime (ALT) tests under elevated temperatures of 210¿290°C and dc fields of 25¿250 kV/cm were performed and the lifetime criterion, common for ceramic multilayer capacitors, was employed: The increase of the current density by one order of magnitude is defined as the end of lifetime. The capacitor under these conditions is still functioning and therefore this criterion is more conservative than time dependent dielectric breakdown (TDDB). The activation energy and voltage dependence are determined from the ALT, to extrapolate to operation conditions. Activation energies of 1.1¿1.6 eV have been determined and a dependence on the applied dc voltage was observed. All capacitors showed a lifetime of more than 10 years at 85°C and 5 V.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132350307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices MI004微型化，高性能铁电和压电薄膜器件
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693744
M. Klee, W. Keur, R. Mauczok, H. van Esch, M. de Wild, J. Liu, A. Roest, K. Reimann, C. Renders, L. Peters, M. Tiggelman, O. Wunnicke, K. Neumann
{"title":"MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices","authors":"M. Klee, W. Keur, R. Mauczok, H. van Esch, M. de Wild, J. Liu, A. Roest, K. Reimann, C. Renders, L. Peters, M. Tiggelman, O. Wunnicke, K. Neumann","doi":"10.1109/ISAF.2008.4693744","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693744","url":null,"abstract":"Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"22 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133071952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PZT thin films for RF MEMS applications 用于射频MEMS应用的PZT薄膜
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693748
R. Polcawich, J. Pulskamp, D. Judy, R. Kaul, Hengky Chandrahalim, S. Bhave, M. Dubey
{"title":"PZT thin films for RF MEMS applications","authors":"R. Polcawich, J. Pulskamp, D. Judy, R. Kaul, Hengky Chandrahalim, S. Bhave, M. Dubey","doi":"10.1109/ISAF.2008.4693748","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693748","url":null,"abstract":"In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near ¿12 dB and theoretical predictions approaching better than ¿3 dB.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114871908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PMN-PT Piezoelectric-electrostrictive monolithic multi-material composite actuator PMN-PT压电-电致伸缩单片多材料复合驱动器
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693833
P. Ngernchuklin, B. Jadidian, E. K. Akdoğan, A. Safari
{"title":"PMN-PT Piezoelectric-electrostrictive monolithic multi-material composite actuator","authors":"P. Ngernchuklin, B. Jadidian, E. K. Akdoğan, A. Safari","doi":"10.1109/ISAF.2008.4693833","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693833","url":null,"abstract":"Monolithic Multi-Material piezoelectric-electrostrictive (PE-ES) composite actuators were developed by co-sintering of 0.65PMN¿0.35PT and 0.9PMN¿0.1PT. The piezoelectric and electrostrictive ceramic powder were dry pressed into bi-layer disks with 1:1 ratio. The bi-layer composites were co-sintered and then poled. The monolithic bi-layer PE-ES composites (either flat or dome) were used to fabricate cymbal actuator. Experimental results indicate that uncapped bi-layer dome shaped actuators provide strong interface and exhibits peak displacement as high as 14 #m at 10 kV/cm. Cymbal actuators fabricated using such dome bi-layer composite results in amplified-displacement with a peak value of 25 ¿m at 10 kV/cm.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116741220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Phonon anomalies in multiferroic BiFeO3 epitaxial thin films with rhombohedral (R3c) symmetry 具有菱形(R3c)对称的多铁BiFeO3外延薄膜中的声子异常
2008 17th IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2008-12-02 DOI: 10.1109/ISAF.2008.4693775
M. Singh, S. Dussan, R. Katiyar
{"title":"Phonon anomalies in multiferroic BiFeO3 epitaxial thin films with rhombohedral (R3c) symmetry","authors":"M. Singh, S. Dussan, R. Katiyar","doi":"10.1109/ISAF.2008.4693775","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693775","url":null,"abstract":"Raman spectrum of (111) oriented BiFeO3 (BFO) thin film was studied in temperature range between 27 °C - 500 °C. Observed three sharp A1 Raman modes at 136, 162, and 212 cm¿1 show anomalous changes in frequencies, line width and integrated intensity between span of temperature range 250¿ 400 °C i.e. around magnetic phase transition (TN). The sign and magnitude of such anomalous behavior appears to be an experimental evidence of perturbation in antiferromagnetic ordering coupled with octahedral tilting reveals strong spin-phonon coupling around TN. The soft mode behavior of A1 Raman modes at 136 and 162 cm¿1 was observed directly and reveals a decrease of the Curie temperature (TC) of the strained film, which was originally suggested by M. S. Kartavtseva and co workers [Thin Solid Films, 515 (2007) 6416].","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132038815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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