R. Polcawich, J. Pulskamp, D. Judy, R. Kaul, Hengky Chandrahalim, S. Bhave, M. Dubey
{"title":"用于射频MEMS应用的PZT薄膜","authors":"R. Polcawich, J. Pulskamp, D. Judy, R. Kaul, Hengky Chandrahalim, S. Bhave, M. Dubey","doi":"10.1109/ISAF.2008.4693748","DOIUrl":null,"url":null,"abstract":"In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near ¿12 dB and theoretical predictions approaching better than ¿3 dB.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"PZT thin films for RF MEMS applications\",\"authors\":\"R. Polcawich, J. Pulskamp, D. Judy, R. Kaul, Hengky Chandrahalim, S. Bhave, M. Dubey\",\"doi\":\"10.1109/ISAF.2008.4693748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near ¿12 dB and theoretical predictions approaching better than ¿3 dB.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this article, we report on the successful demonstration of lead zirconate titanate (PZT) thin film based MEMS devices for use in radio frequency (RF) systems. Both series and shunt switches operating at or below 10 V and 15 V, respectively, have been developed capable of operating over a wide temperature range. These switches have also been integrated into a 17 GHz, 2-bit reflection phase shifter with an average insertion loss of 2.96 dB. Along with switches and phase shifters, PZT based MEMS resonators show promise in the sub-GHz regime with demonstrated insertion loss values near ¿12 dB and theoretical predictions approaching better than ¿3 dB.
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