MI004 miniaturised, high performance ferroelectric and piezoelectric thin film devices

M. Klee, W. Keur, R. Mauczok, H. van Esch, M. de Wild, J. Liu, A. Roest, K. Reimann, C. Renders, L. Peters, M. Tiggelman, O. Wunnicke, K. Neumann
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引用次数: 2

Abstract

Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of exceeding 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of passive components and has not yet been achieved in any other passive integration technology. Furthermore, thin film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.
MI004微型化,高性能铁电和压电薄膜器件
薄膜铁电电容器已与电阻器和ESD保护等有源功能集成到小型小型化模块中,可节省高达80%的电路板空间。利用最佳的材料和工艺,集成电容器的电容密度可达100 nF/mm2,击穿电压超过90 V。这些具有极高击穿电压的高密度电容器的集成是无源元件领域的一次革命,在任何其他无源集成技术中尚未实现。此外,在1ghz频段上,钛酸锶钡薄膜可调谐电容器具有高调谐范围和高品质因数。最后,实现了高开关速度的压电开关薄膜。
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