B.V. Borges, W. Zubrzycki, P. Herczfeld, S. Kravitz, G. R. Hadley, G. A. Vawter, R. Corless, R.E. Smith, R. Wendt, J. Word, T. M. Bauer
{"title":"GaAs Fabry-Perot modulator for microwave applications","authors":"B.V. Borges, W. Zubrzycki, P. Herczfeld, S. Kravitz, G. R. Hadley, G. A. Vawter, R. Corless, R.E. Smith, R. Wendt, J. Word, T. M. Bauer","doi":"10.1109/SBMOMO.1995.509695","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509695","url":null,"abstract":"A distributed bragg reflector Fabry-Perot modulator for microwave applications is considered. The device consists of a Fabry-Perot cavity formed by etching gratings on a rib waveguide with a buried GaAs guiding layer. Computer simulations based on the finite difference method were used to model the device. State-of-the-art first order gratings with a pitch of 0.20 /spl mu/m have been successfully fabricated.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129029584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Multi-chip modules for digital, analog and optical applications","authors":"A. Chu, J. Devine","doi":"10.1109/SBMOMO.1995.509590","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509590","url":null,"abstract":"MCMs offer an effective approach for the implementation of mixed signal and electro-optical circuits. The paper describes MCM types (-L, -C, and -D), discuss cost-performance trade-off, and the design methodology for analog and digital MCM circuits. Significant performance improvements attributed to the MCM embodiment were observed in the digital and microwave circuits of a MCM-D direct digital synthesis (DDS)/single sideband (SSB) upconverter when the number of interfaces and associated parasitic effects were reduced.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129955150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel HEMT structures for mixer applications","authors":"R. Allam, C. Kolanowski, D. Théron, Y. Crosnier","doi":"10.1109/SBMOMO.1995.509622","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509622","url":null,"abstract":"We present two new and original HEMT structures. They have been designed and realized for gate mixer applications. The first HEMT has a decoupling capacitor between the drain and the source. The integrated capacitor acts as a low-pass filter. The second HEMT presents a very nonlinear transconductance profile. The IF signal is provided by the mixing of the RF signal and the second harmonic of the LO signal. Thus, the required LO frequency is divided by 2.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130175732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V.P. Neto, V. Corso, R. A. Fischer, C. Finardi, F. Giannini
{"title":"A low power consumption GaAs MMIC transimpedance amplifier for 2.5 Gb/s optical receivers","authors":"V.P. Neto, V. Corso, R. A. Fischer, C. Finardi, F. Giannini","doi":"10.1109/SBMOMO.1995.509667","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509667","url":null,"abstract":"The paper presents a GaAs MMIC transimpedance amplifier for a high bit rate (2.5 Gb/s) optical communication system. A GaAs integrated circuit with a transimpedance gain of 63 dBohm, a bandwidth of 1.8 GHz with high capacitance photodiode operation and low power consumption is demonstrated. A complete set of simulated and measured results are presented to confirm the effectiveness of the design approach. The circuit design was carried out at R&D Center of TELEBRAS together with University of Rome through the ITU/UNDP project and the prototypes were fabricated at GEC-Marconi.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121187376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An adaptive linearizer using feedback and dynamic biasing techniques for SSPAs","authors":"F. Ghannouchi, J.-S. Cardinal, R. Hajji","doi":"10.1109/SBMOMO.1995.509647","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509647","url":null,"abstract":"A novel adaptive envelope feedback linearizer using a dynamic gate bias for gain stabilization has been developed and validated using PIP MDS software. A two-tone test at around 14 GHz for a 25 dBm solid state power amplifier (SSPA) shows an average in-band intermodulation product below -35 dBc up to saturation. This linearity enhancement is accompanied by only a 10% increase (in average) in the power-added efficiency from 35% to 45%.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126369841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of RF/microwave packaging structures","authors":"S. Cyrusian, G. Fotheringham","doi":"10.1109/SBMOMO.1995.509642","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509642","url":null,"abstract":"Various RF/microwave packaging structures are investigated by a numerical full wave analysis. In frequency ranges up to 80 GHz chip contacting methods are characterized. Coplanar waveguide-to-coax and -to-microstrip and coax-to-microstrip transitions are treated. Optimization and sensitivity curves are given. The simulation results can be used for introducing some standard RF/microwave packaging structures.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116043780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Coupling single-mode fiber to uniform and symmetrically tapered thin-film waveguide structures using gadolinium gallium garnet","authors":"Jagannath Gadi, Raj Yalamanchili, Mohammad Shahid","doi":"10.1109/SBMOMO.1995.509739","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509739","url":null,"abstract":"The need for high efficiency components has grown significantly due to the expanding role of fiber optic communications for various applications. Integrated optics is in a state of metamorphosis and there are many problems awaiting solutions. One of the main problems being the lack of a simple and efficient method of coupling single-mode fibers to thin-film devices for integrated optics. Optical coupling between a single-mode fiber and a uniform and tapered thin-film waveguide is theoretically modeled and analyzed. The novel tapered structure presented is shown to produce a perfect match for power transfer.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127211502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A simple method for the chirp reduction in single-frequency semiconductor lasers","authors":"M.E.C. Koslinski, L. Conrado, M. Carvalho","doi":"10.1109/SBMOMO.1995.509682","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509682","url":null,"abstract":"The direct current modulation of single-longitudinal mode semiconductor lasers causes a dynamic shift of the peak emission wavelength (chirping) arising from gain-induced variations of the laser refractive index. This linewidth broadening results in data-dependent distortion in long-haul, high-bit-rate, direct detection optical communication systems due to interaction with the generally nonzero chromatic dispersion of monomode fibers. Here it is shown that the frequency chirping of 1.55 /spl mu/m DFB lasers and the bit error of the system can be greatly reduced by the use of a delta stub in the microstrip driving circuit of the laser.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"320 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133945985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Frequency-dependent FDTD method applied to optically-controlled coupled-dielectric-waveguide","authors":"R. Farias, A. Giarola","doi":"10.1109/SBMOMO.1995.509657","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509657","url":null,"abstract":"The finite-difference time domain (FDTD) method for dispersive media is applied to the study of the electromagnetic wave propagation in optically-controlled coupled-dielectric-waveguides. The optical control is achieved by means of light incidence on semiconductor layers deposited onto the waveguides. The effects produced by the induced plasma in the semiconductor are analyzed through the dispersion characteristic of the waveguide structure.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133029207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dielectric and magnetic anisotropy effect on the nonradiative dielectric (NRD) waveguide dispersion","authors":"A. C. César, R. Souza","doi":"10.1109/SBMOMO.1995.509723","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509723","url":null,"abstract":"The combined effect of dielectric and magnetic anisotropy in NRD waveguides is investigated. The analysis shows how these media characteristics affects the propagation of modes corresponding to the fundamental LSM and LSE modes. Numerical results are presented for some common materials like sapphire, Epsilam-10, PTFE and glass. An accurate knowledge of this dispersion is important for the design and analysis of NRD devices at millimeter wavelengths.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130764850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}