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2014 9th European Microwave Integrated Circuit Conference最新文献

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Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers 片上微波功率放大器系统级特性的频率扩展和预失真设置
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986715
R. Quaglia, Tao Jiang, V. Camarchia
{"title":"Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers","authors":"R. Quaglia, Tao Jiang, V. Camarchia","doi":"10.1109/EUMC.2014.6986715","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986715","url":null,"abstract":"In this paper, a system level characterization setup for on-wafer microwave power amplifiers is presented. The arbitrary waveform generator carrier frequency limitations are overcome by the insertion of an upconversion system. Linearity tests are performed to assess the validity of the proposed solution. A simple on-wafer calibration method for absolute power determination is developed, allowing for accurate average power and efficiency measurement in presence of modulated signals. A characterization and predistortion example on a backhaul 7 GHz Doherty power amplifier is carried out, highlighting the capabilities of the proposed setup.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129537515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs 提高了源场极板AlGaN/GaN hemt的相位线性度
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMIC.2014.6997864
P. Colantonio, F. Giannini, R. Giofré, L. Piazzon, V. Camarchia, G. Ghione, M. Pirola, R. Quaglia, A. Nanni, A. Pantellini, C. Lanzieri
{"title":"Improved phase linearity in Source Field Plate AlGaN/GaN HEMTs","authors":"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon, V. Camarchia, G. Ghione, M. Pirola, R. Quaglia, A. Nanni, A. Pantellini, C. Lanzieri","doi":"10.1109/EUMIC.2014.6997864","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997864","url":null,"abstract":"The benefits of using source field plate (FPS) in AlGaN/GaN HEMTs to reduce the phase distortion in efficient power amplifiers (PAs) is demonstrated in this contribution. The link between phase distortion of a PA and the drain-to-gate feedback parasitic capacitance of the transistor is shown. This link leads to critical phase nonlinearity expecially when architectures based on output load modulation, as the Doherty topology, are adopted. The FPS effect in reducing the feedback parasitic capacitance and, thus, the AM/PM distortion of the PA is verified. For experimental validation two AlGaN/GaN HEMT structures, with and without FPS, are realized and compared in order to extract the effects of FPS. Source-load pull characterizations are performed on both structures in order to verify the benefits of FPS on phase distortion, both in fixed and modulated output load conditions.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133601763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Asymmetrical mechanical design for bouncing suppression in RF-MEMS switches RF-MEMS开关弹跳抑制的非对称机械设计
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986758
E. Lemoine, C. Guines, A. Pothier, P. Blondy
{"title":"Asymmetrical mechanical design for bouncing suppression in RF-MEMS switches","authors":"E. Lemoine, C. Guines, A. Pothier, P. Blondy","doi":"10.1109/EUMC.2014.6986758","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986758","url":null,"abstract":"Contact bouncing is among the most critical phenomenon reducing RF-MEMS reliability. This paper shows that very simple changes in switch design permit suppression of contact bouncing upon closure. The proposed asymmetrical design gets two dimples in contact with substrate electrodes successively, instead of simultaneously. This helps the dissipation of kinetic energy and prevents contact re-opening. On top of preliminary ageing prevention, the structure can handle more actuation voltage and then have more contact force compared to symmetrical structures. Experimental demonstration is presented on metal contact switches with more than 2mN contact force, one symmetrical with significant bouncing and the other asymmetrical without any bouncing clearly show the relevance of the approach.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121564904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of multi-state actuator for mm-wave reconfigurable front-end circuits using CMOS-MEMS technologies 基于CMOS-MEMS技术的毫米波可重构前端电路多态执行器设计
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986760
Yu‐Sheng Su, Chia-Wei Chang, Yi-Chen Liu, Yi-Ming Chen, Chia-Can Chang, Sheng-Fuh Chang
{"title":"Design of multi-state actuator for mm-wave reconfigurable front-end circuits using CMOS-MEMS technologies","authors":"Yu‐Sheng Su, Chia-Wei Chang, Yi-Chen Liu, Yi-Ming Chen, Chia-Can Chang, Sheng-Fuh Chang","doi":"10.1109/EUMC.2014.6986760","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986760","url":null,"abstract":"Reconfigurability in mm-wave circuits and systems become desired in recent years. In this work, the parallel-beam driven actuator is modified in two ways to enhance the tuning capability. In cooperated with the proposed actuator, two V-band frequency-tunable front-end circuits are demonstrated. The bandstop filter is fabricated in 0.35-μm CMOS-MEMS process, providing five-band switching within 51-63.6 GHz with band rejection > 20 dB. The slot antenna in 0.18-μm CMOS-MEMS shows seven-band switching from 46.6 to 56 GHz with the antenna gain > -15.6 dBi. The measurements present a good agreement with simulated results.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121605551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the unconditional stability of N-port networks 关于n口网络的无条件稳定性
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986738
S. Colangeli, R. Cleriti, D. Palombini, E. Limiti
{"title":"On the unconditional stability of N-port networks","authors":"S. Colangeli, R. Cleriti, D. Palombini, E. Limiti","doi":"10.1109/EUMC.2014.6986738","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986738","url":null,"abstract":"This work reviews the topic of two-port unconditional stability (US) and fixes some misconceptions still common among high-frequency designers, notwithstanding the broad, relevant literature. Ohtomo's test for network stability is then presented in a synthetic form and linked to US conditions. Finally, this approach is extended to N-port networks to obtain two sets of US conditions, which are intuitive generalizations of results well known in the two-port case. These conditions represent a necessary complement to the few works which have discussed three-port US up to now, since they only focus on the geometrical part of the problem, omitting to explicitly take care of Rollett's proviso and its implications on US.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115121643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Soft compression and the origins of nonlinear behavior of GaN HEMTs GaN hemt的软压缩和非线性行为的起源
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986681
J. Pedro, L. Nunes, P. Cabral
{"title":"Soft compression and the origins of nonlinear behavior of GaN HEMTs","authors":"J. Pedro, L. Nunes, P. Cabral","doi":"10.1109/EUMC.2014.6986681","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986681","url":null,"abstract":"This work responds to the commonly formulated question in PA design of “Why do GaN HEMTs' nonlinear behavior seems so distinct from the one of their Si LDMOS, GaAs MESFETs or HEMTs counterparts?”. Starting from some recent results on the origin of AM/AM and AM/PM distortion in power amplifiers made for these two device types, we demonstrate that there is no fundamental reason why the devices should be different, except that the formers suffer from a noticeable low-frequency dispersion. Then, we dig into this particular aspect of GaN HEMT operation, to show that this charge trapping-related phenomenon is responsible for a severe self-biasing capable of inducing soft-compression of an otherwise almost flat AM/AM gain plot - when measured with static CW tests - which, in fact, corresponds to a severe gain expansion when the AM/AM is assessed with more realistic dynamic tests performed with real communication signals. And it is this class-C PA like AM/AM that is responsible for the recognized GaN HEMT nonlinearity.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129879829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
X-band 10W MMIC high-gain power amplifier with up to 60% PAE x波段10W MMIC高增益功率放大器，PAE高达60%
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986691
D. Sardin, T. Reveyrand, Z. Popovic
{"title":"X-band 10W MMIC high-gain power amplifier with up to 60% PAE","authors":"D. Sardin, T. Reveyrand, Z. Popovic","doi":"10.1109/EUMC.2014.6986691","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986691","url":null,"abstract":"This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15μm GaN 3MI process from TriQuintTM. The devices operate at a peak power density of 3.8 W/mm at 10GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19dB at peak efficiency. The total size of the chip is 9.2 mm2.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127142019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Genetic-algorithm-based sythesis of low-noise amplifiers with automatic selection of active elements and dc biases 基于遗传算法的自动选择有源元件和直流偏置的低噪声放大器合成
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986724
A. Kalentyev, L. Babak, D. V. Garays
{"title":"Genetic-algorithm-based sythesis of low-noise amplifiers with automatic selection of active elements and dc biases","authors":"A. Kalentyev, L. Babak, D. V. Garays","doi":"10.1109/EUMC.2014.6986724","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986724","url":null,"abstract":"An advanced genetic-algorithm-based synthesis technique is proposed for design automation of microwave linear and low noise amplifiers. Jointly with automatic generation of amplifier schematics directly from performance requirements, it allows the selection of the best transistor types (sizes) and DC biases. As an example, the design of 2-10 GHz single-stage MMIC LNA is demonstrated.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127717279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
An enhanced phase shifted transmitter based on 2ndHT GaN-PAs with energy recovery circuit 基于带能量回收电路的2dht GaN-PAs增强相移发射机
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMIC.2014.6997932
R. Giofré, L. Piazzon, R. Danieli, A. Spinosa, P. Colantonio, F. Giannini
{"title":"An enhanced phase shifted transmitter based on 2ndHT GaN-PAs with energy recovery circuit","authors":"R. Giofré, L. Piazzon, R. Danieli, A. Spinosa, P. Colantonio, F. Giannini","doi":"10.1109/EUMIC.2014.6997932","DOIUrl":"https://doi.org/10.1109/EUMIC.2014.6997932","url":null,"abstract":"Phase Shifted Transmitter (PST) operates without mixers and allows the direct generation and transmission of any envelope and phase-modulated signals. Besides of maintaining all the benefits of the standard PST architecture, the solution here proposed allows the integration of an energy recovery circuit capable to boost the efficiency of the overall transmitter up to 50%. The theoretical analysis of the novel architecture is reported highlighting the relevant differences and advantages with respect to the standard approach. The required key RF blocks have been realized in hybrid technology employing GaN HEMT devices and Schottky diodes to design the power amplifiers (PAs) and the energy recovery circuit, respectively. In particular, the former have been designed by exploiting the 2nd harmonic tuning approach. Experimental results on the PAs have shown an efficiency higher than 70% at 39 dBm of output power with an associated gain greater than 11 dB at 2GHz. Moreover, a draft experimental validation of the overall system is also reported showing promising performances.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129849101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits 紧凑的10 ~ 13 GHz GaN低噪声放大器MMIC使用简单的匹配和偏置电路
2014 9th European Microwave Integrated Circuit Conference Pub Date : 2014-12-18 DOI: 10.1109/EUMC.2014.6986723
Woojin Chang, Young-Rak Park, J. Mun, S. Ko, Gye-Ik Jeon
{"title":"Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits","authors":"Woojin Chang, Young-Rak Park, J. Mun, S. Ko, Gye-Ik Jeon","doi":"10.1109/EUMC.2014.6986723","DOIUrl":"https://doi.org/10.1109/EUMC.2014.6986723","url":null,"abstract":"A compact 10 ~ 13 GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using simple matching and bias circuits is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. In order to reduce the chip size and simplify the structure of the LNA, the matching and bias circuits were combined functionally and structurally together and the meandered microstriplines were used. And the combined circuits also contributed to decrease the noise figure of the LNA. Therefore, the measured noise figures of the LNA are almost equal to the minimum noise figure of 2 × 100 μm device which was used for the first stage of the LNA. And also the chip size of the fabricated LNA is 1.7 × 0.8 mm2 including two ground-signal-ground (GSG) pads and the DC pads on the chip. The LNA shows a noise figure of 1.7 ~ 2.1 dB with a gain of 19 ~ 26 dB across the 10 ~ 13 GHz frequency range. In continuous wave (CW) conditions, it presents a saturated output power of 29 ~ 34 dBm for 10 ~ 13 GHz and also the output third-order intercept point (OIP3) of 42 dBm at 11.4 GHz.","PeriodicalId":223533,"journal":{"name":"2014 9th European Microwave Integrated Circuit Conference","volume":"122 24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114610829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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