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2019 IEEE 16th International Conference on Group IV Photonics (GFP)最新文献

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Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared 中红外锗硅波导损耗的侧壁依赖性研究
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853945
K. Gallacher, U. Griskeviciute, Iain MacGilp, R. Millar, D. Paul
{"title":"Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared","authors":"K. Gallacher, U. Griskeviciute, Iain MacGilp, R. Millar, D. Paul","doi":"10.1109/GROUP4.2019.8853945","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853945","url":null,"abstract":"Measurements of sidewall roughness by atomic force microscopy has been used to understand the waveguides losses of Ge-on-Si mid-infrared rib waveguides. Simulations indicate the measured roughness is well below values corresponding to the measured losses indicating sidewall roughness scattering is not the dominant loss mechanism.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122854410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mid-Index Silicon Nitride Devices for Enhanced Linear and Non-Linear Photonic Functionalities 增强线性和非线性光子功能的中折射率氮化硅器件
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926032
T. D. Bucio, C. Lacava, S. Ilie, I. Skandalos, G. De Paoli, K. Grabska, A. Khokhar, P. Petropoulos, F. Gardes
{"title":"Mid-Index Silicon Nitride Devices for Enhanced Linear and Non-Linear Photonic Functionalities","authors":"T. D. Bucio, C. Lacava, S. Ilie, I. Skandalos, G. De Paoli, K. Grabska, A. Khokhar, P. Petropoulos, F. Gardes","doi":"10.1109/GROUP4.2019.8926032","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926032","url":null,"abstract":"We demonstrate devices with enhanced linear and nonlinear functionalities in the near-infrared fabricated on our low temperature silicon nitride platform. The devices include polarisation insensitive MUX/DEMUX, waveguides with enhanced non-linear effects useful for wavelength conversion applications and devices for the 2 μm wavelength range.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123884989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strained Germanium Lasing in the Mid-Infrared 中红外应变锗激光
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925921
F. A. Pilon, A. Chelnokov, J. Faist, H. Sigg, A. Lyasota, Y. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. Hartmann
{"title":"Strained Germanium Lasing in the Mid-Infrared","authors":"F. A. Pilon, A. Chelnokov, J. Faist, H. Sigg, A. Lyasota, Y. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. Hartmann","doi":"10.1109/GROUP4.2019.8925921","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925921","url":null,"abstract":"Mid-Infrared lasing between 3.20 and 3.66 μm is achieved in undoped germanium microbridges strained up to 5.9 % and up to a temperature of 100 K under optical pulsed excitation of 100 ps, exploiting a non-equilibrium carrier dynamic.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124550703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Efficiency of Narrow-Width MOS Capacitor Type Si Optical Modulator with TM Mode Excitation TM模式激励下的高效窄宽MOS电容型Si光调制器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853933
J. Fujikata, Takahiro Nakamura, M. Noguchi, Shigeki Takahashi
{"title":"High-Efficiency of Narrow-Width MOS Capacitor Type Si Optical Modulator with TM Mode Excitation","authors":"J. Fujikata, Takahiro Nakamura, M. Noguchi, Shigeki Takahashi","doi":"10.1109/GROUP4.2019.8853933","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853933","url":null,"abstract":"We developed a high speed and high efficiency of a narrow-width metal-oxide-semiconductor (MOS) capacitor type Si optical modulator (Si-MOD) by applying TM optical mode excitation. We designed and fabricated the mode-converter from TE to TM mode for MOS capacitor type Si-MOD. Even in case of 200-nm width rib-waveguide, Si MOS-MOD with TM mode showed high-modulation efficiency of 0.17 Vcm and smaller electrical capacitance with decrease in MOS junction width. We also demonstrated 40 Gbps operation for 30–60 μm-long Si MOS-MOD with TM mode.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124574652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity 低温灵敏度的III-V/Si MOS电容器马赫曾德调制器
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8853874
T. Aihara, T. Fujii, H. Fukuda, T. Hiraki, T. Kakitsuka, S. Matsuo, K. Takeda, T. Tsuchizawa
{"title":"III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity","authors":"T. Aihara, T. Fujii, H. Fukuda, T. Hiraki, T. Kakitsuka, S. Matsuo, K. Takeda, T. Tsuchizawa","doi":"10.1109/GROUP4.2019.8853874","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8853874","url":null,"abstract":"We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08–0.11 Vcm in the C and L band at 25–80 degrees Celsius.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128747746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-Loss Silicon Technology for High-Q Bright Quantum Sources 高q亮度量子光源的低损耗硅技术
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/group4.2019.8925730
H. El Dirani, D. Bajoni, C. Sciancalepore, F. Sabattoli, F. Garrisi, C. Petit-Etienne, J. Hartmann, E. Pargon, C. Monat, M. Liscidini, M. Galli
{"title":"Low-Loss Silicon Technology for High-Q Bright Quantum Sources","authors":"H. El Dirani, D. Bajoni, C. Sciancalepore, F. Sabattoli, F. Garrisi, C. Petit-Etienne, J. Hartmann, E. Pargon, C. Monat, M. Liscidini, M. Galli","doi":"10.1109/group4.2019.8925730","DOIUrl":"https://doi.org/10.1109/group4.2019.8925730","url":null,"abstract":"Atomic-scale sidewalls roughness smoothening thanks to high temperature hydrogen annealing is a key enabler for a low-loss (<0.5 dB/cm) silicon Q-photonics platform. Using this technology, authors report here about high-Q (Ql >4 × 105) silicon micro-resonators for on-chip heralded single-photon bright quantum sources by spontaneous four-wave mixing.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115682680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
[Copyright notice] (版权)
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/group4.2019.8853893
{"title":"[Copyright notice]","authors":"","doi":"10.1109/group4.2019.8853893","DOIUrl":"https://doi.org/10.1109/group4.2019.8853893","url":null,"abstract":"","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115707050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature-Insensitive Polysilicon Mach-Zehnder Interferometer in Bulk CMOS 体CMOS中温度不敏感多晶硅马赫-曾德干涉仪
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926112
Cheng-Tse Tang, T. Yen, Ming-Yung Jung, Y. Hung
{"title":"Temperature-Insensitive Polysilicon Mach-Zehnder Interferometer in Bulk CMOS","authors":"Cheng-Tse Tang, T. Yen, Ming-Yung Jung, Y. Hung","doi":"10.1109/GROUP4.2019.8926112","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926112","url":null,"abstract":"We demonstrate a temperature-insensitive Mach-Zehnder interferometer (MZI) on the polysilicon gate of standard bulk CMOS platform and achieve a temperature sensitivity of ± 4 pm/°C over 60 nm wavelength range. Further fine tuning the temperature sensitivity is achieved by simply adjusting the strip waveguide length.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115207504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proposal and Simulation of a Low Loss, Highly Efficient Monolithic III-V/Si Optical Phase Shifter 一种低损耗、高效率的单片III-V/Si光学移相器的设计与仿真
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8926128
Younghyun Kim, Sanghyeon Kim, Y. Ban, S. Lardenois, D. Yudistira, M. Pantouvaki, J. Van Campenhout
{"title":"Proposal and Simulation of a Low Loss, Highly Efficient Monolithic III-V/Si Optical Phase Shifter","authors":"Younghyun Kim, Sanghyeon Kim, Y. Ban, S. Lardenois, D. Yudistira, M. Pantouvaki, J. Van Campenhout","doi":"10.1109/GROUP4.2019.8926128","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8926128","url":null,"abstract":"Carrier-depletion monolithic III-V/Si optical phase modulators are proposed and numerically investigated. Thanks to the larger carrier-induced refractive index change of the III-Vs compared to Si, the III-V/Si phase modulator is predicted to achieve 0.07-Vcm modulation efficiency at 16-dB/cm optical loss at 1310-nm wavelengths.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126887297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities 拉伸应变GeSn微磁盘腔中的超低阈值连续激光
2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI: 10.1109/GROUP4.2019.8925675
A. Elbaz, Z. Ikonić, F. Boeuf, P. Boucaud, D. Grützmacher, D. Buca, M. E. Kurdi, N. von den Driesch, K. Pantzas, X. Checoury, E. Herth, S. Sauvage, G. Patriarche, I. Sagnes, J. Hartmann
{"title":"Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities","authors":"A. Elbaz, Z. Ikonić, F. Boeuf, P. Boucaud, D. Grützmacher, D. Buca, M. E. Kurdi, N. von den Driesch, K. Pantzas, X. Checoury, E. Herth, S. Sauvage, G. Patriarche, I. Sagnes, J. Hartmann","doi":"10.1109/GROUP4.2019.8925675","DOIUrl":"https://doi.org/10.1109/GROUP4.2019.8925675","url":null,"abstract":"GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. These past few years the research were consequently focused on incorporating the highest Sn content as possible to achieve high directness and high temperature laser operation. This unfortunately results is increased threshold. In this contribution we discuss the advantages in combining tensile strain engineering with lower Sn content alloys. This approach is motivated by the higher material quality in lower Sn content. The case with Sn content as small as 5.4 at.% Sn will be discussed. The alloy is initially compressively strained, and exhibits an indirect band gap that is turned to direct by applying tensile strain. A specific technology based on transfer On Insulator stressor layer on metal was developed to address strain engineering, thermal cooling and defective interface with the Ge-VS. This led to lasing in Ge0.95Sn0.05 microdisk cavities with dramatically reduced thresholds, by two order of magnitude, as compared to the case with high Sn alloys and as consequence enables cw operation.","PeriodicalId":221282,"journal":{"name":"2019 IEEE 16th International Conference on Group IV Photonics (GFP)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126987029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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