中红外锗硅波导损耗的侧壁依赖性研究

2019 IEEE 16th International Conference on Group IV Photonics (GFP) Pub Date : 2019-08-01 DOI:10.1109/GROUP4.2019.8853945

K. Gallacher, U. Griskeviciute, Iain MacGilp, R. Millar, D. Paul

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引用次数: 1

摘要

利用原子力显微镜测量侧壁粗糙度来了解锗硅中红外肋波导的波导损耗。模拟表明，测量到的粗糙度远低于测量到的损失值，表明侧壁粗糙度散射不是主要的损失机制。

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Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared

Measurements of sidewall roughness by atomic force microscopy has been used to understand the waveguides losses of Ge-on-Si mid-infrared rib waveguides. Simulations indicate the measured roughness is well below values corresponding to the measured losses indicating sidewall roughness scattering is not the dominant loss mechanism.

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2019 IEEE 16th International Conference on Group IV Photonics (GFP)

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