SBMO International Microwave Conference/Brazil,最新文献

{"title":"Development Of Industrial Microwave Sensors In Finland","authors":"E. Nyfore, P. Vainikainen, A. Raisanen","doi":"10.1109/SBMO.1993.587234","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587234","url":null,"abstract":"111 Finland industrial microwatve sensors have been developed for more than 20 years at the Radio Laboratory of the Helsinki University of Technology and in some companies. Many of the sensors are related to applications in the wood and paper industry. This report is a review of the most, important results achieved in this field in Finland.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131396395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ANRAD - ANntennas For RAdio Digital Links At 4 And 6 GHz Bands.","authors":"E. Abud Filho, L. Pereira, M.G. Castello Branco, M. Nakamura","doi":"10.1109/SBMO.1993.589390","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589390","url":null,"abstract":"2.1 Feed Subsystem Tlir A N R A D aiit,eiiiias frrd si ihs lioi~ii n figure 3 . has heen clesigned t,o acliieve vrry lolr cross~~olariza.t,ion levrls and VSJVR. For t,liis purpose it, coiisist,s of a dual-band corruga.t,ecl liorii aiid a f d l y corruga,t,rtl four port. cliplrser to o1wa.t.r in both 4 a.nd 6 GHz wit,li t.wo ort,liogona.l linear polariza.t.ioiis ( H / V ) . Tlir frrd systsems c a n also be iiitegrat,ed usiiig ot,liers commercially available coiiil,iiic~rs.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Speed Optoelectronic Devices","authors":"R. Nagarajan, J. Bowers","doi":"10.1109/SBMO.1993.587225","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587225","url":null,"abstract":"Introduction High speed optoelectronic devices aire an integral part of modern optical fiber communication systems which are operating at increalsingly higher and higher bit rates. Recently, IM-DD (intensity modulated-direct detection) optical fiber transmission with the NRZ (non-return to zero) format at 10 Gbit/s over 9000 km using fiber amplifier repeaters has been demonstrated [l]. Soliton transmission systems operating at 100 Gbit/s have been recently demonstrated [ 2 ] . These soliton systems are capable of error-free transmission over unlimited disiances [3]. Many of these systems are also being applied to solve the speed bottlenecks in short haul interconnections between high speed computing elements and control processes. The integral part of all these fiber optic link applications are the high speed optoelectronic devices, like lasers, photodetectors, external modulators, multiplexers,'demultiplexers and switches, and subsystems like high repetition rate modelocked lasers. In this paper, we will review research high speed lasers and photodetectors.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MMIC Based InP/InGaAsP Intensity Optical Modulator","authors":"M.T.C. Silva, P. Herczfeld","doi":"10.1109/SBMO.1993.587245","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587245","url":null,"abstract":"The research presented in this paper concerns the development of a MMIC InPhGaAsP intensity optical modulator, suitable for chip level integration of photonic devices and MMICs. In the proposed codigluration the microwave field induces E L periodic structure via doping and electro-optic effects. The: interaction of light with the induced grating yields a modulated optical signal. The paper discusses the structure design anti the expected device performance.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122589828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cad-Oriented Models Of Packaged Low-Noise HEMTs From Measured Noise And Scattering Parameters","authors":"A. Caddemi, G. Gambino, M. Sannino","doi":"10.1109/SBMO.1993.587221","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587221","url":null,"abstract":"CAD-oriented models of low-noise HEMTs have been obtained by an optimization technique that allows a close fitting of very accurate measurements of noise and scattering parameters performed on several samples. circuit model, in which the chip and package networks can not be separated. In this work a comparative model analysis is performed between two different series of packaged low-noise HEMTs to evidence the parameter-to-model correlations through a sensitivity analysis. For devices in the packaged form, the result of the extraction procedure is the overall I, Introduction Traditional modeling methods for low-noise HEMTs are based on scattering S parameter fitting only, since accurade noise N-parameter determination is timeconsuming and requires specialized measurement systems. employing one of the well-known noise models [1,2]. The complete charactlerization of several low-noise HEMTs in terms of both Nand S-parameters employing the measurement procedure reported in [3], allowed us the extraction of noisy small-signal models even for packaged devices. It has to be noted that in this case the parasitic elements are not determined by additional measurements and the packaged HEMT model is extracted as a whole equivalent circuit. Therefore, the element values also account for the chip-to-package interactions. As a consequence, different types of HEMTs having the same package can be characterized by different input/output configurations of the model. In this work a comp,wative analysis is presented between the circuit models of the packaged low-noise HEMTs of the NE32083A and the 2SK677 series by NEC and SONY, respectively. Usually the N-parameters are calculated from the extracted small-signal model by","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116181744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Normal Mode: Cross-Helix For Circular Polarization","authors":"S. Zainud-Deen, H. Sharshar, K. Awadalla","doi":"10.1109/SBMO.1993.587207","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587207","url":null,"abstract":"CIBSTRACT Moment method !solut ion f o r t he normal mode cross-hel ixes as an antcenna and as a s c a t t e r e r w i l l be invest igated. The i n p u t impedance a t one h e l i x w i t h the o ther one short c i r c u i t e d p a r a s i t i c element i s determined. The backscat ter ing Radar Cross Sect ion o f the s t ruc tu re , when i l l u m i n a t e d bly a plane wave of c i r c u l a r left-handed p o l a r i z a t i o n from the z-axis d i r e c t i o n , i s i nves t i ga ted w i t h vary ing the parameters o f t t w h e l i x , as the number af tu rns a id t t ie p i t c h angle cn, I t ir; slmwn t h a t wider half-BSCS angle can be obtained from a h e l i x of smal l p i t c h angle and the a x i a l r a t i o and the BSCS va lue can be improved by inc reas ing the number o f t u r n s o f tlhe h e l i x ,","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129407441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electromagnetic Energy For Heating Viscous Petroleum Reservoirs","authors":"W. Damata, J.C. Peuch, H. Baudrand","doi":"10.1109/SBMO.1993.587237","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587237","url":null,"abstract":"","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114272824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MMIC Bandwidth-Gain Control Optical Preamplifier","authors":"F. Giannini, C. Paoloni, G. Orengo","doi":"10.1109/SBMO.1993.587243","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587243","url":null,"abstract":"A GaAs monolithic bandwidth-gain control transimpedance amplifier for optical communication links adaptable to different Gigabit transmission rate is presented. A gain dynamic of 22 dB is obtained in .6-2.8 GHz range with a control voltage range of .5v. The circuital topology, the theoretical and experimental results are also presented. The complete study has been carried under the frame of the ESPRIT Project 5018 COSMIC.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133920358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Secondary Effects In Cassegrain Inverse Antenna Structures","authors":"Matthias Haenisch, M. A. Ferraz, W. Fleming, P.M. Goncalves","doi":"10.1109/SBMO.1993.589392","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589392","url":null,"abstract":"","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134018691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Non Linear Modelling Techniques Of High Frequency MESFET Transistors","authors":"J.L. Garcia, A. Tazón, A. Mediavilla","doi":"10.1109/SBMO.1993.587220","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587220","url":null,"abstract":"This paper presents comparisons between the different methodologies of non-linear modelling for MESFET transistors. Also, different kinds of measurements for modelling purposes, measuring several devices; including power MESFET transistors, have.s been studied. In this sense, we have developed a continuous and pulsed automated set up along with a fitting program that permit us to obtain the access resistors $, R,, Rd, the Schottky current parameters I,, and a, and the parameters of the nonlinear Id, source. A software program to extract the linear equivalent circuit measuring the scattering parameters at the interest frequency band at several operation points, permits us to obtain the linear elements and the parameters of the nonlinear Schottky capacitor of the model. At last, a large signal MESFET model suitable for applications in commercial nonlinear microwave CAD have been developed. The originality of this woirk lies in the fact that multibias starting points (hot and cold device) for pulsed measurements are used to derive a unique expression for Ids that describes the DC as well as the small and large signal behaviour of a device biased at any point. This Ids current is modelled biy two nonlinear sources, one of them is a bias point dependent nonlinear equation and the other one represents the differences between DC and Pulsed characteristics at every bias point. Experimental pulsed characteristics and simulations, for different package transistors, using our Id, nonlinear equation at several quiescent bias points have been canid out, showing excellent agreement. Furthermore, successful comparisons between MDS nonlinear simulations using the extracted model and experimental power measurements of the transistor loaded by 50 Ohms at the input and output ports have been made. I INTRODUCTION. The actual civil and military applications, have allowed the HEMT and MESFET to be incorporated in an increasing numlber of nonlinear hybrid and MMIC circuits. To design these circuits, nonlinear software programs using harmonic balance or timedomain algorithms are used. These simulatioii tools are very powerful but they need accurate large signal device models to improve the performance of these circuits and to minimize the number of design and fabrication cycles required. Therefore, foundries need to have more advanced non-linear models than the traditional quasi-static approximation. An important problem in dealing with the nonlinear modelling of these devices is their anomalous low frequency behaviour: Ihe quasi-static approach is not fulfilled. This behaviour leads to the frequency dependence of transconductance and output resistance and its origin is due to trapping, surface state, etc, [l] [2] and implies that the DC characteristics are an","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133391522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}