基于MMIC的InP/InGaAsP强度光调制器

SBMO International Microwave Conference/Brazil, Pub Date : 1993-08-02 DOI:10.1109/SBMO.1993.587245

M.T.C. Silva, P. Herczfeld

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引用次数: 0

摘要

本文研究了一种适用于光子器件和MMIC芯片级集成的MMIC InPhGaAsP强度光调制器的开发。在本文提出的共变中，微波场通过掺杂和电光效应诱导出了E - L周期结构。光与感应光栅的相互作用产生调制光信号。本文讨论了该装置的结构设计和预期的装置性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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MMIC Based InP/InGaAsP Intensity Optical Modulator

The research presented in this paper concerns the development of a MMIC InPhGaAsP intensity optical modulator, suitable for chip level integration of photonic devices and MMICs. In the proposed codigluration the microwave field induces E L periodic structure via doping and electro-optic effects. The: interaction of light with the induced grating yields a modulated optical signal. The paper discusses the structure design anti the expected device performance.

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SBMO International Microwave Conference/Brazil,

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