SBMO International Microwave Conference/Brazil,最新文献

{"title":"The Utilization Of Rf/Microwaves In The Treatment Of Cardiac Dysfunction","authors":"A. Rosen, P. Walinsky, P. Herczfeld, A. Greenspon","doi":"10.1109/SBMO.1993.587202","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587202","url":null,"abstract":"","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122815053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamic Analysis Of Coupled Microstrip Lines On Ferromagnetic Substrates Perpendicularly Magnetized","authors":"M. Lins de Albuquerque, A. D’assunção, A. Giarola","doi":"10.1109/SBMO.1993.589556","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589556","url":null,"abstract":"","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127683279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon MOSFET Technology For Wireless Communications","authors":"N. Camilleri, J. Costa, D. Lovelace, D. Ngo","doi":"10.1109/SBMO.1993.587241","DOIUrl":"https://doi.org/10.1109/SBMO.1993.587241","url":null,"abstract":"Silicon MOSFET technology using 1.5um gate lengths has demonstrated excellent performance for 9OOMHz applications. Circuit results for low noise amplifiers, power amplifiers, mixers, and oscillators using this technology will be discussed in comparison to other device technologies. Device results for 0.6um gate length devices showing the microwave performance of silicon MOS transistors are discussed. These results together with scaling predictions indicate that silicon MOSFETs operating at frequencies up to 3 G H z will play a major role for the wireless communication systems. Introduction: Activity in silicon MOS technologies for RF applications has been increasing due to the needs for robust and low cost technologies for personal communication systems. Most of the activity in RF MOS has been in the power amplification area:; where both vertical a lateral FETs have been used for multi Watt amplifiers a t frequencies below 1 GHz [1,21. The work reported in this paper will concentrate on lateral devices where both source and drain are accessible from the front side of the silicon. This paper will demonstrate the R F capabilities of this technology beyond power amplifiers and will discuss the results of various RF functions found in a portable radio. This technology which is CMOS like in nature has demonstrated excellent F F performance, thus opening up new exciting possibilities for mixed signal applications and higher levels of integration. Devices with 0.6um gate lengths show excellent microwave performance of both the Nand P-channel devices, which opens new exciting RF icomplementary circuit solutions. This technology IS simple, robust , and manufacturable, which combined with its excellent RF performance makes it a major player in the competing device technologies for vvireless communication svstem s. Silicon MOSFET Device Technology: The basic device cross-section i s shown in Figure 1. The device is fabricated on a heavy P + substrate which is used to carry the source current and pirovide a high Q ground plane close to the active devices. The active area is then built on a Pepi structure. A thick field oxide (2.5um) is grown using high pressure oxidation techniques PO minimize the metal capacitance to ground. Vias from the front side to the substrate are achieved using P + sinkers that conveniently take the source of the MOSFET to ground with minimal source lead inductance. The gates are silicided such that gate access resistance is lowered to achieve the required power gains and low noise figures. Unlike regular CMOS technology, the device is unilateral and has a long drain extension to provide .the necessary drain to source breakdown voltage. The device also has a P-base region that adjusts the device threshold and provides resistance to drain to source punch through. In order to avoid lateral bipolar action the P-base is connected to1 the N + on the source side via an ohmic contact. Such enhancement mode devices with gate lengths of 1.5um","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127112273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Circuit Model For GaAs MESFET As An Optical-microwave Interface","authors":"K.A.R. Razzooqi, N. Gomes, P. A. Davies","doi":"10.1109/SBMO.1993.589389","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589389","url":null,"abstract":"The use of a G A S MESFET as the interface between optical and microwave components, especially in MMICs (where it is the dominant active component), is discussed. This paper explains the optical response mechanisms in MESFETs and presents a circuit model based on the physical behaviour of the device under optical illumination. Measurements for the MESFET I/V characteristics over a wide bias voltage range and under both dark and illumination conditions are reported. The model for the GaAs MESFET under optical illumination was implemented into the circuit simulation program, PSpice, and simulation results are presented. The simulated results are shown to compare favourably with experimental measurements. Circuit models such as this would be desirable in the design ofoptically interfaced MMICs.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130811601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductor-backed Coplanar Waveguide End-coupled Filter At X-band","authors":"S. H. Al-charchafchi, S. Sretenov","doi":"10.1109/SBMO.1993.589362","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589362","url":null,"abstract":"","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124371812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel Large Market Applications Of Microwaves","authors":"P. Rolland, M. Goloubkoff, E. Constant, N. Haese","doi":"10.1109/SBMO.1993.589540","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589540","url":null,"abstract":"Military and professional civil communications and radar systems have driven the state of the art of microwave technology and equipment. New applications, driven by commercial market, impose drastic changes in existing design and manufacturing. Apart well identified market like DBS, mobile radios and fkture applications around 60 GHz, it exists a plenty of microwave applications in niche markets, and not well known or still in development, but able to raise rapidly. This paper reviews technologies and principles able to solve the commercial market constraints such as MMIC, microwave smart cards, as well as new technological approaches and concepts. Some examples of commercial activities in France illustrate this survey.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129863752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Class Of Slotline Printed Antennas Over Ferrite Substrates","authors":"A.D. de Macedo Filho, M. Mosso","doi":"10.1109/SBMO.1993.589560","DOIUrl":"https://doi.org/10.1109/SBMO.1993.589560","url":null,"abstract":"The Magvi, Aerial, a printed vivaldi type slotline element, printed in a ferrite substrate, is introduced. The design of the shape of the edges for the slotline taper will be discussed. The practical results presented by a prototype will be shown and commented. Finally, some conclusions and suggestions for future works will be given.","PeriodicalId":219944,"journal":{"name":"SBMO International Microwave Conference/Brazil,","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115429988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}