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2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices最新文献

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Modeling of elastic energy relaxation in coaxial InAs-GaAs nanowire heterostructures 同轴InAs-GaAs纳米线异质结构中弹性能量弛豫的建模
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184497
A. N. Karpov, N. Shwartz
{"title":"Modeling of elastic energy relaxation in coaxial InAs-GaAs nanowire heterostructures","authors":"A. N. Karpov, N. Shwartz","doi":"10.1109/EDM.2015.7184497","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184497","url":null,"abstract":"Modeling results of elastic strain distribution in InAs/GaAs core-shell nanowires are presented. Calculations were carried out using molecular static technique. The critical core radius and critical shell thickness of coherent radial heterostructures were estimated. Critical core radius was demonstrated to be 1 nm.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116704547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of high power microwave pulses with adjustable parameters in active X-band RF compression systems 有源x波段射频压缩系统中参数可调的高功率微波脉冲的形成
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184524
V. Avgustinovich, S. Artemenko, V. Igumnov, Y. Yushkov
{"title":"Formation of high power microwave pulses with adjustable parameters in active X-band RF compression systems","authors":"V. Avgustinovich, S. Artemenko, V. Igumnov, Y. Yushkov","doi":"10.1109/EDM.2015.7184524","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184524","url":null,"abstract":"The work presents the results of theoretical and experimental studies of the formation of microwave pulses with the adjustable power, duration, repetition rate and the envelope form during energy output from the cavity by controlled transformation of the oscillation mode at the waveguide stub coupling aperture. Pulse parameters are changed by adjustable elements of the coupling of modes, which directly affect to the coefficient of the coupling of modes h. The possibility to form a series of subnanosecond MW pulses at a fractional energy output and nanosecond pulses of various pulse duration at a single complete output of high frequency energy from the compressor cavity is demonstrated. The envelope of the pulses is calculated through the recurrence relations between the amplitudes of waves in the system, the relations between which have been recorded according to the scattering matrix method. Using this approach on passive X-band RF pulse compression system, we obtained power gain of 8-9 dB, 8-10 ns pulse duration at 9.248 GHz.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123275247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of novel aircraft electrical power systems 新型飞机电力系统的开发
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184593
A. S. Khlebnikov, V. Kaliy
{"title":"Development of novel aircraft electrical power systems","authors":"A. S. Khlebnikov, V. Kaliy","doi":"10.1109/EDM.2015.7184593","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184593","url":null,"abstract":"The paper proposes new point of view to conventional electrical power generation systems. Having considered different variations of the power systems, authors concluded that the electrical energy generating systems based on brushless synchronous generators are very promise. The paper emphasizes necessity of development of up-to-date digital voltage regulators with maintenance documentation and equipment.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"224 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115105037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-assembly of CdS nanocrystals obtained by Langmuir-Blodgett technique on the SiO2 surface Langmuir-Blodgett技术制备的CdS纳米晶体在SiO2表面的自组装
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184490
K. Svit, K. Zhuravlev
{"title":"Self-assembly of CdS nanocrystals obtained by Langmuir-Blodgett technique on the SiO2 surface","authors":"K. Svit, K. Zhuravlev","doi":"10.1109/EDM.2015.7184490","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184490","url":null,"abstract":"Self-assembly of CdS nanocrystals during evaporation of Langmuir-Blodgett matrix on the silica surface was investigated. Information about the size and spatial distribution of self-assembled nanocrystal ensembles were obtained using atomic force microscopy. It was found that matrix annealing temperature strongly affect self-assembly pattern. At annealing temperatures within the range of 175-200°C self-assembly mainly determined by vad der Waals forces between the nanocrystals resulting in formation of three-dimensional ensembles. With annealing temperature increase NC tend to spread evenly on the substrate surface create due to increase on capillary forces influence on self-assembly process.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116169159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanisms of surface morphology formation during Ge growth on Si(100) at high temperatures 高温下Ge在Si(100)上生长时表面形貌形成机制
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184476
A. E. Budazhapova, A. Shklyaev
{"title":"Mechanisms of surface morphology formation during Ge growth on Si(100) at high temperatures","authors":"A. E. Budazhapova, A. Shklyaev","doi":"10.1109/EDM.2015.7184476","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184476","url":null,"abstract":"The formation of island ensembles during the Ge deposition on the Si(100) surface at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at the Ge growth temperatures below 700°C, become monomodal at temperatures above 800°C. The strain relaxation processes at temperatures below 800°C usually occurs by means of the mass transfer from small to neighboring large islands, leading to highly inhomogeneous island distributions in size and along the surface. The monomodal island size distribution is formed under a Ge deposition flux in the conditions of a long deposited-atom surface diffusion length, which provides the atom incorporation in the most preferable surface places. This produces islands to be uniform in size and homogeneously distributed along the surface.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121869034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation) 液滴外延过程中GaAs表面腐蚀分析(蒙特卡罗模拟)
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184477
M. Vasilenko, N. Shwartz
{"title":"Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)","authors":"M. Vasilenko, N. Shwartz","doi":"10.1109/EDM.2015.7184477","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184477","url":null,"abstract":"A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126543245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The pump current pulse generator for laser diodes 激光二极管用泵浦电流脉冲发生器
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184601
Kirill K. Kopylov, A. Khristolyubov, Alexandra I. Khristolyubova
{"title":"The pump current pulse generator for laser diodes","authors":"Kirill K. Kopylov, A. Khristolyubov, Alexandra I. Khristolyubova","doi":"10.1109/EDM.2015.7184601","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184601","url":null,"abstract":"The use of high-frequency PWM converters for laser diodes operating in a pulse mode is a prospective direction. High demands are made to the quality of pump current pulses. In this paper the dual-channel step-down DC/DC converter is considered as a pulse shaper. In addition, the converter control method is proposed. This method allows to set phases of the control signals quickly and without changing the common output current. To show the applicability of this method the PSIM model was developed.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128064788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Active power filter with battery energy storage based on NPC inverters 基于NPC逆变器的电池储能有源电力滤波器
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184574
M. Dybko, S. Brovanov
{"title":"Active power filter with battery energy storage based on NPC inverters","authors":"M. Dybko, S. Brovanov","doi":"10.1109/EDM.2015.7184574","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184574","url":null,"abstract":"Paper presents a model of a shunt active power filter combined with battery energy storage as a unified power conditioning system. It was shown that additional energy storage device in an active power filter makes it possible to extend functionality of the power system. In addition, usage of the parallel inverters with interleaved PWM allowed us to expand the bandwidth of the active power filter. A simulation results proving effectiveness of the proposed power conditioning system are given.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"26 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125679122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Low input energy copper vapor laser 低输入能量铜蒸气激光器
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184553
A. Kulagin, G. Evtushenko, S. Torgaev, T. Evtushenko
{"title":"Low input energy copper vapor laser","authors":"A. Kulagin, G. Evtushenko, S. Torgaev, T. Evtushenko","doi":"10.1109/EDM.2015.7184553","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184553","url":null,"abstract":"The kinetic model of a copper vapor laser operating in a low input energy mode is presented. The modelling results demonstrate the possibility of producing generation in this type of lasers at high frequencies.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"35 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131956564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Justification of the possibility of using cold-plasma method in surgery of papillomatosis and Dupuytren's contracture 冷等离子体法应用于乳头状瘤病及十二指肠挛缩手术的可行性论证
2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI: 10.1109/EDM.2015.7184607
Nabat A. Zhumantaeva, L. I. Lisitsyna, V. Pedder, A. Aleinik, Aleksandr Y. Kondrashov
{"title":"Justification of the possibility of using cold-plasma method in surgery of papillomatosis and Dupuytren's contracture","authors":"Nabat A. Zhumantaeva, L. I. Lisitsyna, V. Pedder, A. Aleinik, Aleksandr Y. Kondrashov","doi":"10.1109/EDM.2015.7184607","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184607","url":null,"abstract":"Surgical method for removing pathologically altered areas of tissue is analyzed. Skin pathologies such as benign papillomas and Dupuytren's contracture, the removal of which may be carried out using cold plasma (CP-coblation) are analyzed. The advantages of coblation listed. The test results of cold plasma application on biopsy of muscle tissue with the experimental setup are shown. The paper examines a number of sites for possible use of coblation. The experimental setup for the study and optimization of electrical and technological parameters of coblation method are described.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"79 2-3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132412237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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