液滴外延过程中GaAs表面腐蚀分析(蒙特卡罗模拟)

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI:10.1109/EDM.2015.7184477

M. Vasilenko, N. Shwartz

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引用次数: 2

摘要

提出了A3B5半导体局部液滴刻蚀的动力学点阵蒙特卡罗模型。该模型基于汽-液-固机理。利用该模型对镓滴蚀刻GaAs衬底进行了研究。得到了坑深与温度和初始液滴直径的关系。

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Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)

A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.

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来源期刊

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices

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