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Formation of PN junction with hydrogenated nicrocrystalline silicon 氢化微晶硅PN结的形成
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111702
K. Kawabata, H. Morikawa, T. Ishihara, K. Sato, H. Sasaki, T. Itagaki, M. Deguchi, S. Hamamoto, M. Aiga
{"title":"Formation of PN junction with hydrogenated nicrocrystalline silicon","authors":"K. Kawabata, H. Morikawa, T. Ishihara, K. Sato, H. Sasaki, T. Itagaki, M. Deguchi, S. Hamamoto, M. Aiga","doi":"10.1109/PVSC.1990.111702","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111702","url":null,"abstract":"The pn junction solar cells consisting of p-type hydrogenated microcrystalline silicon (p- mu c-Si:H) and n-type single-crystalline silicon (n-c-Si) or cast polycrystalline silicon (n-cast-Si) were investigated. By using a thin p- mu c-Si:H layer and inserting an oxide layer between the p- mu c-Si:H and the n-c-Si or n-cast-Si, efficiencies as high as 14.27% for a p- mu c-Si:H/n-c-Si cell and 13. 19% for a p- mu c-Si:H/n-cast-Si cell were obtained. It was found that the interface oxide layer effectively improves the stability of a p- mu c-Si:H/n-cast-Si cell.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124784933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The mobility gaps in a-Si:H and its effects on solar cell performance a-Si:H的迁移率间隙及其对太阳能电池性能的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111884
S. Lee, J. Arch, S. Fonash, C. Wronski
{"title":"The mobility gaps in a-Si:H and its effects on solar cell performance","authors":"S. Lee, J. Arch, S. Fonash, C. Wronski","doi":"10.1109/PVSC.1990.111884","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111884","url":null,"abstract":"Internal photoemission of both electrons and holes was used to investigate the movement of mobility edges in a-Si:H. Shifts of the electron mobility edges were observed with changes in the optical gap, E/sub opt/ due to temperature and incorporation of hydrogen. Mobility gaps of 1.8 to 1.9 eV were measured for plasma-assisted CVD (chemical-vapor-deposited) films with optical gaps from 1.73 to 1.76 eV. The large effects of the differences between E/sub opt/ and the mobility gap in a-Si:H on solar cell performance are demonstrated using detailed numerical modeling of the maximum open-circuit voltage. The results obtained show that, for the commonly used a-Si:H materials with E/sub opt/ from 1.70 to 1.75 eV, the maximum open-circuit voltage that can be obtained, even with p-i-n homojunction cells, is 1.0 eV. This indicates that the V/sub oc/ in present solar cells is not limited by the intrinsic properties of the a-Si:H.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125183597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Optical losses in multi junction a-Si:H based solar cells and modules 多结a-Si:H基太阳能电池和组件的光学损耗
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111864
S. Wiedemann, J. Morris, L. Yang
{"title":"Optical losses in multi junction a-Si:H based solar cells and modules","authors":"S. Wiedemann, J. Morris, L. Yang","doi":"10.1109/PVSC.1990.111864","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111864","url":null,"abstract":"A comprehensive optical model is described which is applicable to glass/textured CTO/a-Si:H/a-SiGe:H-based multijunction cells and allows the calculation of optical absorption in each layer of the solar cell. The major optical losses which limit the output current density of tandem cells using 1.72 eV/1.50 eV bandgap a-Si:H/a-SiGe:H and an ITO/Ag rear contact to about 20.8 mA/cm/sup 2/ (sum of both junctions) are identified and discussed. It is shown that improvements in the reflectivity and scattering properties of the rear contact may be expected to result in current densities of 22.3 mA/cm/sup 2/ in this type of cell using intrinsic layers of limited thickness. The use of low-cost materials, such as soda-lime glass and the aluminum rear contacts typically employed in the manufacture of large-area modules, should reduce the total current density available to 18.5 mA/cm/sup 2/.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126503609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Maximizing the benefits derived from PV plants: Selecting the best plant design and plant location 最大限度地提高光伏电站的效益:选择最佳的电站设计和选址
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111749
T. Hoff, J. Iannucci
{"title":"Maximizing the benefits derived from PV plants: Selecting the best plant design and plant location","authors":"T. Hoff, J. Iannucci","doi":"10.1109/PVSC.1990.111749","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111749","url":null,"abstract":"The value of fixed, one-axis, and two-axis tracking PV (photovoltaic) plants is computed on the basis of four years of historical weather data (1985-1988) from 14 locations in Pacific Gas and Electric Company's service territory. Five basic flat-plate PV plant designs are considered: fixed flat-plate, one-axis north/south tracking, one-axis east/west tracking, one-axis vertical tracking, and two-axis tracking. The value results can be used to maximize benefits by combining them with cost results. Based on the cost and value results, it is possible to select the plant design and plant location with the greatest benefits. It is concluded that the Carrisa Plains plant is the PG&E site studied with the highest system-wide value.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"25 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125767107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Cold crucible induction casting of semiconductor silicon for solar cell 太阳能电池用半导体硅的冷坩埚感应铸造
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111705
K. Kaneko, T. Misawa, K. Tabata
{"title":"Cold crucible induction casting of semiconductor silicon for solar cell","authors":"K. Kaneko, T. Misawa, K. Tabata","doi":"10.1109/PVSC.1990.111705","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111705","url":null,"abstract":"Cold-crucible induction casting of silicon for solar cell material was performed. In the casting, molten silicon was heated and pinched electromagnetically, allowing the metal to avoid contact with the crucible wall. Hence, impurities were prevented and crucible consumption was unnecessary. The cold crucible used was an open-bottom type, having an 85 mm*85 mm cross section. The silicon material was fed continuously from the open top of the crucible, and the ingot was pulled down at a rate of 1.0 to 4.0 mm/min. Solar cell efficiencies above 13% were obtained, equal to conventional mold methods using cast silicon.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125944760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Solar spectral irradiance under overcast skies (solar cell performance effects) 阴天下的太阳光谱辐照度(太阳能电池性能影响)
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111789
S. Nann, C. Riordan
{"title":"Solar spectral irradiance under overcast skies (solar cell performance effects)","authors":"S. Nann, C. Riordan","doi":"10.1109/PVSC.1990.111789","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111789","url":null,"abstract":"The authors examine a particular aspect of cloudy-sky conditions that affects PV (photovoltaic) device performance, i.e. the solar spectral distribution under an overcast sky with respect to the spectral response of PV devices. The approach is to analyze several thousand measured spectral irradiance data that illustrate spectral shifts under cloud cover. The questions raised are how the transmission of clouds deviates from an assumed neutral density filter and whether the standard reference spectrum applied by the PV community to design and performance prediction is applicable for cloudy climates. Comparing the measurements with clear-sky simulations, the authors established a correlation between cloud thickness and alterations in the relative spectral transmission. Because of the approach used, these observed effects are true only for the statistical mean of a sufficiently large number of measurements.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125079998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Polycrystalline thin films of Hg/sub 1-x/Zn/sub x/Te for use in multijunction solar cells 多结太阳能电池用Hg/sub - 1-x/Zn/sub -x/ Te多晶薄膜
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111733
S. Arshed, R. Miles, R. Hill
{"title":"Polycrystalline thin films of Hg/sub 1-x/Zn/sub x/Te for use in multijunction solar cells","authors":"S. Arshed, R. Miles, R. Hill","doi":"10.1109/PVSC.1990.111733","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111733","url":null,"abstract":"Thin films of Hg/sub 1-x/Zn/sub x/Te were deposited onto Corning 7059 glass substrates using the coevaporation of HgTe with ZnTe. Layers were produced with bandgaps in the range of 0.6-2.25 eV by altering the alloy composition. The layers had absorption coefficients >10/sup 5//cm/sup 1/ and as high as 6*10/sup 5/ cm/sup 1/ in samples with E/sub g/>1.5 eV. The samples were p-type at 300 K with low resistivities ( approximately=0.5 Omega cm) and Hall mobilities in the range 2-12 cm/sup 2//V/sup 1/s/sup 1/ for layers <0.5- mu m thick. Arrhenius plots of the resistivities gave two straight lines corresponding to an activation energy, of 50 +or-5 meV for temperatures >220 K and an activation energy of 7 +or-4 meV for temperatures <220 K. The layers consisted of columnar grains, and the grain size increased with film thickness and with postgrowth annealing in argon. Heterojunctions with CdS and Cd/sub 1-x/Zn/sub x/S window, layers had I-V characteristics which were rectifying, and these devices exhibited the photovoltaic effect.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121102260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A stable 10% solar cell with a-Si/a-Si double junction structure 具有A - si / A - si双结结构的10%稳定太阳能电池
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111854
Y. Ichikawa, S. Fujikake, T. Yoshida, T. Hama, H. Sakai
{"title":"A stable 10% solar cell with a-Si/a-Si double junction structure","authors":"Y. Ichikawa, S. Fujikake, T. Yoshida, T. Hama, H. Sakai","doi":"10.1109/PVSC.1990.111854","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111854","url":null,"abstract":"Hydrogenated amorphous silicon (a-Si:H)-based solar cells with a double-junction tandem structure have been studied with a view to improving the light-induced degradation in photovoltaic performance. Conversion efficiencies of 11.4% for a 1 cm/sup 2/ tandem cell. 9.7% (in total area efficiency) for a 30 cm*40 cm tandem submodule, and 8.5% (in total area efficiency) for a 40 cm*120 cm tandem submodule were achieved. The stabilized efficiency of the 11.4% cell after a 1000 h light soaking was 10% under open-circuit conditions.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121319251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Effect of hydrogen plasma treatment on SnO/sub 2/:F films for use in a-Si solar cells 氢等离子体处理对a-Si太阳能电池用SnO/sub 2/:F薄膜的影响
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111875
K. Sato, Y. Gotoh, Y. Hayashi, H. Nishimura
{"title":"Effect of hydrogen plasma treatment on SnO/sub 2/:F films for use in a-Si solar cells","authors":"K. Sato, Y. Gotoh, Y. Hayashi, H. Nishimura","doi":"10.1109/PVSC.1990.111875","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111875","url":null,"abstract":"The effects of hydrogen plasma treatment on the properties of SnO/sub 2/:F films were investigated using X-ray photoelectron spectroscopy (XPS). It was found that silicon oxide formed at the interface between SnO/sub 2/:F and a-Si:H was decreased by the pretreatment at temperatures above 150 degrees C for highly transparent films with low carrier concentration. The decrease of silicon oxide was closely correlated to a decrease in resistivity corresponding to an increase in Hall mobility of SnO/sub 2/:F. This suggests that the oxygen desorption from the SnO/sub 2/:F surface is a dominant effect of the pretreatment. The a-Si solar cell fabricated oil the pretreated SnO/sub 2/:F film showed improved fill-factor and conversion efficiency, which could be explained by the lowered sheet resistance and the improved SnO/sub 2/:F/a-Si:H interface.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127236035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ink jet printing for metallization on very thin solar cells 超薄太阳能电池金属化的喷墨印刷技术
IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI: 10.1109/PVSC.1990.111577
H. Somberg
{"title":"Ink jet printing for metallization on very thin solar cells","authors":"H. Somberg","doi":"10.1109/PVSC.1990.111577","DOIUrl":"https://doi.org/10.1109/PVSC.1990.111577","url":null,"abstract":"Ink jet printing has been used to fabricate very thin solar cells (150 mu m), and it offers important benefits both as a benign method for treating thin wafers as well as reducing gridline shadowing. A modified thick-film ink jet approach that is computer integrated provides improved potential for these benefits, and is especially well suited for large-scale automated manufacture.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125978311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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