{"title":"Dynamic Loop Analysis for Modular Masterless Multi-Phase DC-DC Converters","authors":"Yang Zhang, R. Zane, D. Maksimović","doi":"10.1109/COMPEL.2006.305647","DOIUrl":"https://doi.org/10.1109/COMPEL.2006.305647","url":null,"abstract":"Closed loop system modeling for the modular masterless multiphase architecture with paralleled voltage and current sharing regulation loops is presented in this paper. The parallel structure allows both loops to have high bandwidth. Modeling results of such systems show that the voltage loop and current loop can be designed independently assuming identical power stages in each phase. The effects of mismatch on the closed loop system dynamics are then studied to assure performance and stability. A design example with simulation and experimental results is presented for a modular masterless 2-phase converter demonstrating fast response of both voltage and current loops","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129609061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimal Control of the Parallel Interleaved Buck dc-dc Converter","authors":"A. Beccuti, G. Papafotiou, M. Morari","doi":"10.1109/COMPEL.2006.305652","DOIUrl":"https://doi.org/10.1109/COMPEL.2006.305652","url":null,"abstract":"This paper extends the recently introduced approach in constrained optimal control methods for fixed frequency switch-mode DC-DC converters to the parallel interleaved synchronous step-down circuit topology. A simplified modelling scheme is employed allowing for the related optimization problem to be efficiently formulated and solved off-line. Simulation results are provided to illustrate the outcome of the proposed approach","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132830607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs","authors":"T. Duong, A. Hefner, D. Berning","doi":"10.1109/COMPEL.2006.305676","DOIUrl":"https://doi.org/10.1109/COMPEL.2006.305676","url":null,"abstract":"Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125062384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. M. Ortiz-Rodríguez, A. Hefner, D. Berning, C. Hood, S. Oleum
{"title":"Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices","authors":"J. M. Ortiz-Rodríguez, A. Hefner, D. Berning, C. Hood, S. Oleum","doi":"10.1109/COMPEL.2006.305630","DOIUrl":"https://doi.org/10.1109/COMPEL.2006.305630","url":null,"abstract":"A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows achieving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128170733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}