{"title":"用于高压高频SiC功率mosfet的自动参数提取软件","authors":"T. Duong, A. Hefner, D. Berning","doi":"10.1109/COMPEL.2006.305676","DOIUrl":null,"url":null,"abstract":"Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs\",\"authors\":\"T. Duong, A. Hefner, D. Berning\",\"doi\":\"10.1109/COMPEL.2006.305676\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV\",\"PeriodicalId\":210889,\"journal\":{\"name\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMPEL.2006.305676\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Workshops on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPEL.2006.305676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs
Previously developed IGBT model parameter extraction tools (IMPACT) are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary to establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. In this paper, the SiC-IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC power MOSFETs and for commercial silicon power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV
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