2014 IEEE 6th India International Conference on Power Electronics (IICPE)最新文献

Optimal placement of distributed generator in transmission system using an algorithmic approach 分布式发电机在输电系统中的优化配置

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115745

Navpreet Kaur, Kanwardeep Singh, Satish Kansal

引用次数: 11

Power quality improvement of a position sensorless controlled PMBLDCM drive using boost converter 利用升压变换器改善无位置传感器控制PMBLDCM驱动器的电能质量

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115830

Sachin Singh, Sanjeev Singh

{"title":"Power quality improvement of a position sensorless controlled PMBLDCM drive using boost converter","authors":"Sachin Singh, Sanjeev Singh","doi":"10.1109/IICPE.2014.7115830","DOIUrl":"https://doi.org/10.1109/IICPE.2014.7115830","url":null,"abstract":"This paper proposes a boost converter for power quality improvement at input AC mains of a permanent magnet brushless DC motor (PMBLDCM) operated under position sensorless control. Presently hall sensors are used as position sensors in PMBLDCM and its signals are utilized for starting and control of PMBLDCM under various operating conditions. For the position sensorless control, back-EMF signal of PMBLDCM is used to detect its rotor position. A pulsed starting method is proposed for position sensorless starting which uses the PMBLDCM as a synchronous motor at standstill. The PMBLDCM is driven to a threshold speed where the back-EMF is detectable and the control of motor is shifted to position sensorless running mode. The PMBLDCM drive is generally fed by a single phase AC mains followed by a diode bridge rectifier (DBR) and a dc link capacitor through a three phase inverter. In the proposed work, a boost DC-DC converter is used for power factor correction (PFC) at input AC mains and to control the DC link voltage using current multiplier approach. The proposed method of power quality improvement of a position sensorless controlled PMBLDCM drive using boost converter is designed, modelled in Matlab-Simulink environment and its performance is evaluated under speed, torque and input AC voltage variations. The obtained results show improved power quality at AC mains along with smooth starting from standstill and during speed and torque control of the PMBLDCM drive operated in position sensorless mode.","PeriodicalId":206767,"journal":{"name":"2014 IEEE 6th India International Conference on Power Electronics (IICPE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127454942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A hybrid electric vehicle with incorporation of VaReB technology 采用VaReB技术的混合动力汽车

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115847

A. Mathur, Tanmay Parashar, D. Kohli, R. Mittal, A. Dube

引用次数: 1

A survey on active power filters control strategies 有源电力滤波器控制策略综述

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115754

K. Steela, B. Rajpurohit

引用次数: 21

A novel method of generating electricity by setting up turbines over rail locomotives 一种通过在铁路机车上安装涡轮机发电的新方法

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115794

P. Sharma, Sahil, N. Hari, S. Banerjee, R. Sharma

引用次数: 4

A DC motor driver consisting of a single MOSFET with capability of speed and direction control 由单个MOSFET组成的具有速度和方向控制能力的直流电机驱动器

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115811

G. Mulay, Akshay Yembarwar, Surabhi Raje

{"title":"A DC motor driver consisting of a single MOSFET with capability of speed and direction control","authors":"G. Mulay, Akshay Yembarwar, Surabhi Raje","doi":"10.1109/IICPE.2014.7115811","DOIUrl":"https://doi.org/10.1109/IICPE.2014.7115811","url":null,"abstract":"Generally, a DC motor driver circuit consists of four MOSFETs forming an H-bridge. This type of motor driver can control the speed as well as the direction of rotation of the motor. However, both the functions can be performed using another type of motor driver consisting only one MOSFET and two relays. This paper demonstrates the proposed motor driver circuit having bidirectional speed controllability for motors. The circuit is constructed with a pair of relay (in place of four MOSFETs) that facilitate the direction control and a single MOSFET which enables the speed control of the motor. Moreover, this type of motor driver circuit provides several advantages over the former one. While designing the H-bridge, we have used relays for the High-side instead of the traditionally used MOSFETs and thus, the corresponding intricate MOSFET driving circuitry is also eliminated. As a result, the motor driver circuit is compact and low-priced. Since we do not include the MOSFET driving circuitries such as bootstrapping ICs, transistor circuit, etc., which contribute to the unreliability, the proposed motor driver possess increased reliability. Relays, being mechanical devices, are less prone to the failure due to Electrostatic Discharge (ESD) as compared to the MOSFETs under the same operating conditions. We have illustrated in the paper the designing and testing of this motor driver along with its performance evaluation.","PeriodicalId":206767,"journal":{"name":"2014 IEEE 6th India International Conference on Power Electronics (IICPE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124693655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Comparative study of enhancement-mode gallium nitride FETs and silicon MOSFETs for power electronic applications 用于电力电子的增强型氮化镓场效应管与硅mosfet的比较研究

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115858

Anirban Pal, G. Narayanan

{"title":"Comparative study of enhancement-mode gallium nitride FETs and silicon MOSFETs for power electronic applications","authors":"Anirban Pal, G. Narayanan","doi":"10.1109/IICPE.2014.7115858","DOIUrl":"https://doi.org/10.1109/IICPE.2014.7115858","url":null,"abstract":"Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is becoming popular as fast switching devices for power electronic applications. This paper presents a comparative study of the critical parameters such as on-state resistance, reverse conduction drop, leakage current, maximum junction temperature, threshold voltage, gate charge requirement and device capacitances of commercially available enhancement-mode GaN (e-GaN) devices with those of Si MOSFET devices of the same voltage and current ratings. This paper also calculates the switching transition times of the e-GaN HEMTs based on their gate-charge characteristics. Further, the switching losses are also evaluated. These switching transition times and switching energy losses are also compared for the two types of devices. The e-GaN devices show excellent reduction in switching times and switching losses over the Si MOSFET devices, indicating their suitability for high-frequency power conversion. The e-GaN devices also reduce the on-state loss in most cases. However, the reverse conduction drop and leakage currents are higher with eGaN devices than with Si devices.","PeriodicalId":206767,"journal":{"name":"2014 IEEE 6th India International Conference on Power Electronics (IICPE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130339048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Optimal capacitor placement in radial distribution system 径向配电系统中电容器的优化配置

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115763

Atul Kumar, R. Bhatia

引用次数: 66

Real time implementation and comparison of PI and modified Inc Cond control algorithms for solar applications 太阳能应用中PI控制算法与改进的同步控制算法的实时实现与比较

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115780

V. R. Kolluru, K. Mahapatra, B. Subudhi, T. Ramesh

引用次数: 2

Current control methodology for PV in both standalone & Grid connected mode 当前PV在独立和并网模式下的控制方法

2014 IEEE 6th India International Conference on Power Electronics (IICPE) Pub Date : 2014-12-01 DOI: 10.1109/IICPE.2014.7115739

Sarthak Jain, Lovely Goyal

引用次数: 4