Proceedings of the IRE最新文献_第5页

Bandwidth Limits for Neutralized Input Capacity Amplifiers 中和输入容量放大器的带宽限制

Proceedings of the IRE Pub Date : 1962-09-01 DOI: 10.1109/JRPROC.1962.288173

R. Schoenfeld

引用次数: 3

Stabilized Wide-Band Potentiometric Preamplifiers 稳定宽带电位前置放大器

Proceedings of the IRE Pub Date : 1962-09-01 DOI: 10.1109/JRPROC.1962.288172

J. Moore, J. Gebhart

引用次数: 12

Quantum Effects in Communications Systems 通信系统中的量子效应

Proceedings of the IRE Pub Date : 1962-09-01 DOI: 10.1109/JRPROC.1962.288169

James P. Gordon

引用次数: 167

On the Reception of Quasi-Monochromatic, Partially Polarized Radio Waves 准单色部分极化无线电波的接收

Proceedings of the IRE Pub Date : 1962-09-01 DOI: 10.1109/JRPROC.1962.288174

H. Ko

引用次数: 54

Theoretical Considerations on Millimeter Wave Generation by Optical Frequency Mixing 光混频产生毫米波的理论思考

Proceedings of the IRE Pub Date : 1962-08-01 DOI: 10.1109/JRPROC.1962.288219

J. Fontana, R. Pantell

引用次数: 11

Higher-Order Temperature Coefficients of the Elastic Stiffinesses and Compliances of Alpha-Quartz α -石英弹性刚度和柔度的高阶温度系数

Proceedings of the IRE Pub Date : 1962-08-01 DOI: 10.1109/JRPROC.1962.288222

R. Bechmann, A. Ballato, T. Lukaszek

引用次数: 338

Electron Guns for Forming Solid Beams of High Perveance and High Convergence 用于形成高性能高收敛固体光束的电子枪

Proceedings of the IRE Pub Date : 1962-08-01 DOI: 10.1109/JRPROC.1962.288220

R. Frost, O. T. Purl, H. R. Johnson

{"title":"Electron Guns for Forming Solid Beams of High Perveance and High Convergence","authors":"R. Frost, O. T. Purl, H. R. Johnson","doi":"10.1109/JRPROC.1962.288220","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288220","url":null,"abstract":"A new method has been employed for the design of solid-beam electron guns of high perveance and area convergence. This has resulted in designs with perveance 2.2×10-6 a/v3/2 and convergence ratio 300; and perveance 5×10-6 a/V3/2 and area convergence 6. Using conventional methods, a design with perveance 0.1×10-6a/v3/2 and area convergence ratio 1000 has been obtained. Each of these guns has yielded over 95 per cent transmission through a drift tube, in most cases with less than 1.5 times theoretical Brillouin focusing magnetic field. The design method consists of 1) paper design following earlier workers; 2) construction of a model using the design cathode and anode, but with the focus electrode replaced by a series of annular disk electrodes; 3) measurement, in pulsed bell-jar beam tester, of the beam leaving this gun, by means of a pinhole aperture followed by a split collector, yielding data on current density and trajectory angle as a function of radius and axial position; 4) modifications of annular disk potentials and cathode surface shape to improve beam quality; 5) electrolytic tank determination of the shape of a single electrode to replace the annular disks; and 6) test of the final design in a sealed-off, shielded-cathode, pulsed beam tester in which the beam flows through a drift tube in a uniform magnetic field. These methods are relatively exact and rapid. Drawings are presented for some specific designs.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1962-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81747698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 20

Group Theory and the Energy Band Structure of Semiconductors 群论与半导体能带结构

Proceedings of the IRE Pub Date : 1962-08-01 DOI: 10.1109/JRPROC.1962.288217

A. Nussbaum

引用次数: 5

Injection Currents in Insulators 绝缘子中的注入电流

Proceedings of the IRE Pub Date : 1962-08-01 DOI: 10.1109/JRPROC.1962.288218

M. Lampert

{"title":"Injection Currents in Insulators","authors":"M. Lampert","doi":"10.1109/JRPROC.1962.288218","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288218","url":null,"abstract":"The basic principles of one- and two-carrier, volume-controlled injection currents are reviewed. One-carrier injected currents are necessarily space-charge-limited and are strongly affected by the presence of traps which usually capture and immobilize most of the injected carriers. The trapped carriers are in an effective thermal equilibrium with the free injected carriers. The concepts of \"shallow\" and \"deep\" traps are defined and their effects on injected currents studied. It is shown that the presence of \"deep\" traps leads to a very steep rise of current with voltage, resembling a breakdown curve, at an appropriate voltage. Under double injection, that is, the simultaneous injection into the insulator of electrons from a cathode and holes from an anode, space-charge limitations are at least partially overcome but recombination of injected carriers presents a new limitation on the current flow. In any insulator at sufficiently high injection levels both recombination and space charge contribute to limitation of the current, leading to a dependence of current on the cube of the voltage, for monomolecular recombination processes. For double injection into a semiconductor, the presence of thermally generated free carriers leads to charge neutrality (the so-called ohmic relaxation process) and recombination alone limits the current. In a semiconductor long compared to a diffusion length this leads to a dependence of current on the square of the voltage.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1962-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76799426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 89

Geoscience and Geoengineering 地球科学与地球工程

Proceedings of the IRE Pub Date : 1962-07-13 DOI: 10.1109/JRPROC.1962.288329

L. Berkner

引用次数: 2