2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition最新文献_第2页

A 20 MHz 200-500 mA Monolithic Buck Converter for RF Applications 用于射频应用的20 MHz 200-500 mA单片降压转换器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802705

J. Hannon, R. Foley, J. Griffiths, D. O'Sullivan, K. McCarthy, M. Egan

引用次数: 16

Simplified Active and Reactive Power Control of Doubly Fed Induction Generator and the Simulation with STATCOM 双馈感应发电机有功、无功简化控制及STATCOM仿真

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802936

L. Chun, K. Yong, Chen Jian, Kevin Lee, Xinchun Lin, xiaohu Liu, Feidong Xu

引用次数: 20

High Performance Stationary Frame Filters for Symmetrical Sequences or Harmonics Separation Under a Variety of Grid Conditions 在各种网格条件下用于对称序列或谐波分离的高性能固定帧滤波器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802877

Fei Wang, M. C. Benhabib, J. Duarte, M. Hendrix

引用次数: 21

Voltage Amplitude Regulation Method For Paralleling 400 Hz GPU Inverters Without Intercommunication Signals 无通信信号的400hz GPU逆变器并联电压幅值调节方法

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802883

L. Mihalache

{"title":"Voltage Amplitude Regulation Method For Paralleling 400 Hz GPU Inverters Without Intercommunication Signals","authors":"L. Mihalache","doi":"10.1109/APEC.2009.4802883","DOIUrl":"https://doi.org/10.1109/APEC.2009.4802883","url":null,"abstract":"In order to increase the available power, or for redundancy purposes, it is often required to connect two or more inverters in parallel. For increased reliability it is also desired to achieve paralleling without intercommunication signals, using frequency and amplitude drooping methods. Problems arise when high performance inverters with very low output impedance are connected in parallel through a low impedance cable, because the classic drooping method is only valid assuming large inductive impedance between the paralleled inverters. Additionally, a large drooping amplitude coefficient needs to be used in such cases, resulting in large amplitude deviation (≫ 5%). This is a serious drawback of this method since for critical aircraft applications the typical requirement is for a maximum of 1% amplitude deviation. This paper proposes a method that allows two or more paralleled inverters to employ the principle of power sharing via drooping coefficients while still maintaining good amplitude regulation (≪ 1%) by using a variable reference that is changed in a closed loop, based on the active power, reactive power, and the measured output voltage of the inverter.","PeriodicalId":200366,"journal":{"name":"2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128506937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Zeta Mode Three-level AC/AC Converter Zeta模式三电平AC/AC转换器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802919

Qinglong Zhong, Lei Li

引用次数: 3

High Efficiency Interleaved Power Electronics Converter for wide operating power range 适用于宽工作功率范围的高效率交错式电力电子转换器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802691

K. Guepratte, P. Jeannin, D. Frey, H. Stephan

引用次数: 13

Wireless Transmission of IGBT Driver Control IGBT驱动控制的无线传输

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802825

C. Batard, G. Andrieux, N. Ginot, M. Mannah

引用次数: 15

N-Phase Efficiency-Based Current Sensing Auto-Tuning Controller 基于n相效率的电流传感自整定控制器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802668

J. Qahouq

引用次数: 6

Sequence-Decoupled Resonant Controller for Three-phase Grid-connected Inverters 三相并网逆变器的顺序解耦谐振控制器

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802643

Fei Wang, M. C. Benhabib, J. Duarte, M. Hendrix

{"title":"Sequence-Decoupled Resonant Controller for Three-phase Grid-connected Inverters","authors":"Fei Wang, M. C. Benhabib, J. Duarte, M. Hendrix","doi":"10.1109/APEC.2009.4802643","DOIUrl":"https://doi.org/10.1109/APEC.2009.4802643","url":null,"abstract":"This paper proposes a set of sequence-decoupled resonant controllers constructed with an easy-to-implement structure. It shows that either positive-sequence or negative-sequence components of three-phase unbalanced AC signals can be regulated individually in the stationary frame, while conventional and widely used resonant controllers cannot separately cope with these two sequences. Consequently, the extraction of the corresponding sequence component is not necessary for an individual sequence's control. Moreover, controllers designed for positive and negative sequences can be assigned with different gains to meet practical applications. The principle of new sequence-decoupled resonant controllers is described based on a multi-state-variable structure. In addition, the relation with conventional resonant controllers is investigated. The controllers are found to be equivalent when dealing with both sequences together. Furthermore, two examples are presented to show the application of the proposed controller. The effectiveness of the proposed new controller and its performance in the two system applications are verified by experiments.","PeriodicalId":200366,"journal":{"name":"2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123820860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications 碳化硅发射极关断晶闸管——一种有前途的高压高频应用技术

2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Pub Date : 2009-03-21 DOI: 10.1109/APEC.2009.4802730

Jun Wang, Gangyao Wang, Jun Li, A. Huang

{"title":"Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications","authors":"Jun Wang, Gangyao Wang, Jun Li, A. Huang","doi":"10.1109/APEC.2009.4802730","DOIUrl":"https://doi.org/10.1109/APEC.2009.4802730","url":null,"abstract":"A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO), as a promising technology for future high voltage high frequency switching applications has been developed. The world's first 4.5-kV SiC p type ETO prototype based on a 0.36 cm2 SiC p type GTO shows a forward voltage drop of 4.6 V at a current density of 25 A/cm2 and a turn-off energy loss of 9.88 mJ. The low loss indicates that the SiC ETO could operate at a 4 kHz frequency with a conventional thermal management system. This frequency capability is about 4 times higher than the 4.5-kV-class silicon power devices. The numerical simulations have been carried out to discuss the potential improvement of the high voltage (10-kV) SiC ETOs. The results show that the 10-kV SiC n type ETO has much better trade-off performance than that of the p type ETO due to a smaller current gain of the internal lower (PNP) bipolar transistor in the SiC n type GTO. The experimental and theoretical studies show that the SiC ETO is a promising candidate for high-voltage (≫ 5-kV) high-frequency power conversion applications.","PeriodicalId":200366,"journal":{"name":"2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123871196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7