Philosophical Magazine Part B最新文献_第6页

Excitonic contribution to photoluminescence in amorphous semiconductors 非晶半导体中激子对光致发光的贡献

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208224374

Jai Singh, T. Aoki, K. Shimakawa

引用次数: 12

Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures 不同衬底温度下射频磁控溅射沉积在Si上的SrTiO3薄膜的特性

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208218351

Zhongchun Wang, V. Kugler, U. Helmersson, E. Evangelou, Nikos Konofaos, S. Nakao, P. Jin

{"title":"Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures","authors":"Zhongchun Wang, V. Kugler, U. Helmersson, E. Evangelou, Nikos Konofaos, S. Nakao, P. Jin","doi":"10.1080/13642810208218351","DOIUrl":"https://doi.org/10.1080/13642810208218351","url":null,"abstract":"Abstract SrTiO3 (STO) thin films were deposited on p-type Si(100) substrates by rf magnetron sputtering at various substrate temperatures, and their structural and electrical properties were investigated without post-deposition annealing. The thickness of the films was in the range from 300 to 500 nm while the deposition temperature was varied between room temperature and 550°C. Compositional and structural characterizations included X-ray diffraction, Rutherford back-scattering spectroscopy and variable-angle spectroscopic ellipsometry. Metal-insulator-semiconductor diodes with the configuration of Al/STO/p-Si/Al were fabricated and characterized by capacitance-voltage, current-voltage and admittance spectroscopy measurements. Depending on the substrate temperatures, the dielectric constant of the films varied between 60 and 120 and the loss factor between 0.019 and 0.051 at 100 kHz. All films showed high charge storage capacity, varying between 1.9 and 3μm cm−2. However, the films deposited at 200°C showed the lowest density of bulk trapped charges (150 nC cm−2) and interface states ((1.2–6.1) × 1011 cm−2 eV−1), and are therefore considered to be the most suitable for device applications.","PeriodicalId":20016,"journal":{"name":"Philosophical Magazine Part B","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80865027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

An approximate calculation for transport in magnetic tunnel junctions in the presence of localized states 局域态存在下磁隧道结输运的近似计算

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208224366

P. Levy, Kuising Wang, P. Dederichs, C. Heide, Shufeng Zhang, L. Szunyogh

引用次数: 6

Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons 全势线性增强平面波方法在含d价电子半导体电子性质研究中的应用

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208224369

A. Zaoui, F. H. Hassan

引用次数: 9

The Hubbard model, spin degeneracy and Ising spins 哈伯德模型，自旋简并和伊辛自旋

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208224373

K. Ziegler

引用次数: 0

High-flux current effects in interfacial reactions in Au–Al multilayers 高通量电流对Au-Al多层界面反应的影响

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208218356

N. Bertolino, J. Garay, Umberto Anselmi-Tamburini, Z. Munir

{"title":"High-flux current effects in interfacial reactions in Au–Al multilayers","authors":"N. Bertolino, J. Garay, Umberto Anselmi-Tamburini, Z. Munir","doi":"10.1080/13642810208218356","DOIUrl":"https://doi.org/10.1080/13642810208218356","url":null,"abstract":"Abstract The influence of high dc currents (up to 1019 A cm−2) on the interaction between thin Au-Al layers was investigated over the temperature range 400-500°C. In contrast with earlier diffusion couple results, only four of the five intermetalllic compounds in this system were observed, in both the absence and the presence of a current at all levels. The intermetallics Au5 Al2 and Au2 Al were the dominant products while AuAl and AuAl2 were relatively insignificant. The latter showed little change, growing only to a total thickness of a few micrometres, regardless of the magnitude of the current density and time of annealing. While the sequence of formation of the different intermetallics was not affected by the current, the incubation time and rate of growth of the layers were strongly influenced. The incubation time for the appearance of a measurable product layer was markedly reduced by the current, by nearly two orders of magnitude in some cases. The effect of the current on the nucleation of the product phases was investigated through the use of ‘pre-nucleated’ samples. The results are discussed in light of the effect of the current on atomic flux (electromigration) and on the formation of defects and compared with recent observations on field effects in multilayer systems.","PeriodicalId":20016,"journal":{"name":"Philosophical Magazine Part B","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79711339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 31

Electronic transport properties in the liquid 3d transition-metal series 液态三维过渡金属系列中的电子输运性质

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208218350

H. Zrouri, J. Hugel, C. Chaib, J. Gasser, L. Roubi

引用次数: 1

An experimental determination of the fractal dimension at the metal—insulator transition in germanium ‘doped’ by radiation defects 辐射缺陷掺杂锗中金属-绝缘体跃迁分形维数的实验测定

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208218355

S. A. El-Hakim

引用次数: 1

Electron-phonon interactions cause high-temperature superconductivity 电子-声子相互作用引起高温超导

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208218353

J. C. Phillips

引用次数: 4

Magnetotransport of compounds in the U–Ge system U-Ge体系中化合物的磁输运

Philosophical Magazine Part B Pub Date : 2002-05-01 DOI: 10.1080/13642810208224371

R. Troć, H. Noël, P. Boulet

{"title":"Magnetotransport of compounds in the U–Ge system","authors":"R. Troć, H. Noël, P. Boulet","doi":"10.1080/13642810208224371","DOIUrl":"https://doi.org/10.1080/13642810208224371","url":null,"abstract":"Abstract The recent more thorough reinvestigation of the U–Ge system has finally established the existence of five compounds with the chemical formulae U5Ge4, UGe, U3Ge5, UGe2 and UGe3. Here we add another compound UGe2-x, existing in a homogeneity range of 0.30 < x > 0.35, and crystallizing in the defect tetragonal ThSi2-type structure. This compound is a ferromagnet with T c = 47 K. For all these compounds we have revised earlier measured magnetic properties and measured (often for the first time) the magnetotransport properties such as the electrical resistivity at 0T and in applied magnetic fields up to 8 T. We have found no superconducting properties for U5Ge4 down to 20 mK, which was claimed earlier. The most striking features found for both ferromagnets UGe2-x (ThSi2-type phase) and UGe2 (ZrGa2-type phase) are their temperature dependences of the magnetoresistivity (MR). At low temperatures the MRs for both these phases are large and positive which, above 10 and 15 K respectively, change sign to negative. The largest negative values of MR were found not at the corresponding Tc values but at the characteristic temperature T', which is an inflection point T iof the ρ(T) curve; this is attributed to be a measure of the spin fluctuation temperature Tsf.","PeriodicalId":20016,"journal":{"name":"Philosophical Magazine Part B","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75032907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16