辐射缺陷掺杂锗中金属-绝缘体跃迁分形维数的实验测定

S. A. El-Hakim
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引用次数: 1

摘要

摘要本文通过分析锗在1.5 ~ 300 K温度范围内直流电导率的温度依赖性,讨论了分形维数大小的确定问题。在该温度范围内,快堆中子的大影响使锗的直流电导率失序,辐射缺陷浓度使锗成为靠近金属-绝缘子转变的绝缘子。利用还原活化能法和跳变电导率渗透理论,计算了样品的介电常数。定位半径确定。得到的分形维数满足标度理论。指数t的值为1.7。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An experimental determination of the fractal dimension at the metal—insulator transition in germanium ‘doped’ by radiation defects
Abstract This work deals with the determination of the magnitude of the fractal dimension, from the analysis of the temperature dependence of the dc conductivity in the temperature range 1.5–300 K in germanium, disordered by large fluences of fast reactor neutrons, with the radiation defect concentration making it an insulator near the metal–insulator transition. From the reduced activation energy method and the percolation theory of hopping conductivity, the dielectric constants of the samples are calculated. The localization radius is determined. The obtained fractal dimensions are found to satisfy the scaling theory. The value determined for the exponent t is 1.7.
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