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2012 IEEE International Symposium on Electromagnetic Compatibility最新文献

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Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA) 有意电磁脉冲注入ku波段gaas mesfet低噪声放大器(LNA)的电热击穿
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351827
Liang Lin, Liang Zhou, W. Yin, Lin-Juan Huang
{"title":"Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)","authors":"Liang Lin, Liang Zhou, W. Yin, Lin-Juan Huang","doi":"10.1109/ISEMC.2012.6351827","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351827","url":null,"abstract":"In this paper, electrothermal breakdown of a Ku-band GaAs MESFET-based low noise amplifier (LNA) is investigated in the presence of an intentional electromagnetic pulse. The injected EMP is generated by one special high power microwave system, and its waveform can be adjusted effectively. The input-output responses of a set of LNAs are measured and compared for different injected EMP widths. It is observed that the first-stage GaAs MESFET in the LNA can be easily broken down, which is mainly caused by the rapid temperature rise in its channel region. This research can provide some useful knowledge for protecting some semiconductor active devices from the attack of an injected EMP.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122115331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On lower bound antenna efficiency measurements in a reverberation chamber 混响室中下界天线效率的测量
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351781
J. Coder, J. Ladbury, M. Gołkowski
{"title":"On lower bound antenna efficiency measurements in a reverberation chamber","authors":"J. Coder, J. Ladbury, M. Gołkowski","doi":"10.1109/ISEMC.2012.6351781","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351781","url":null,"abstract":"This paper addresses a few specific aspects of measuring the lower bound of antenna efficiency in a reverberation chamber. While the initial method for measuring the lower bound of efficiency has been presented, three key revisions are discussed here: (1) an updated notation, (2) a revised method for calculating the lower bound of efficiency, and (3) a new method for combining stirring techniques. The updated antenna model notation is designed to be more general and applicable to situations with n antennas. The revised efficiency calculation targets an issue of the original method where the minimum bounding circle exceeded the unit circle. Introducing a new method of combining stirring techniques addresses a weakness of the original model. For the model to work well, it needs a very large number of paddle positions that generate a good statistical approximation of the environment (in this case, a reverberation chamber). As a possible remedy to this weakness, we propose a different way of combining stirring techniques.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122184652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Crosstalk and low frequency radiation in a coupled microstrip line with a top cover 带顶盖的耦合微带线中的串扰和低频辐射
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351758
J. Bernal, F. Mesa, D. Jackson
{"title":"Crosstalk and low frequency radiation in a coupled microstrip line with a top cover","authors":"J. Bernal, F. Mesa, D. Jackson","doi":"10.1109/ISEMC.2012.6351758","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351758","url":null,"abstract":"In this work we use a full-wave method to analyze the propagation characteristics of a coupled microstrip transmission line with a metallic top cover. This metallic top cover may be present in a microstrip structure due to a circuit package. We show that an even leaky mode and an improper odd mode can be excited in this structure at low frequencies. As a consequence, effects as radiation, power loss, and interference, which are usually found in microstrip transmission lines at high frequencies, appear instead in this structure at low frequencies, thus compromising the signal integrity on the line. We provide numerical results to demonstrate that signal propagation and crosstalk for this line cannot be accurately predicted by a conventional analysis based upon a quasi-TEM approximation and transmission line theory even at frequencies such that the cross section of the line is much smaller than the wavelength.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126553615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Small licensed transmitters and their RF exposure assessment 小型授权发射机及其射频暴露评估
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351749
Q. Yu, D. Moongilan, W. S. Majkowski
{"title":"Small licensed transmitters and their RF exposure assessment","authors":"Q. Yu, D. Moongilan, W. S. Majkowski","doi":"10.1109/ISEMC.2012.6351749","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351749","url":null,"abstract":"Deploying small cells, i.e., small licensed transmitters, is one of the key solutions to manage the recent data explosion and network congestion. Small cells are mainly deployed in residential or enterprise environments. Therefore, they can be located in close proximity to human bodies. Their RF output power is low, usually in the range of mW to a couple of watts. This paper addresses the RF exposure compliance for small cells, including regulations, criteria and rules in United States, Canada, Australia and European Union. In addition, small cells' RF safety requirement in various countries in relation to their RF output power levels is investigated. This information would not only help the designers understand the regulatory RF exposure compliance requirements for small cells thoroughly, but also provide them with guidance in determining the proper RF transmitting power levels for small cells. As a result, less time and lower cost would be required in meeting their global regulatory RF exposure assessment requirements.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127735997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Equivalent current source of side-channel signal for countermeasure design with analog circuit simulator 用模拟电路模拟器进行对抗设计的边道信号等效电流源
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351661
T. Amano, K. Iokibe, Y. Toyota
{"title":"Equivalent current source of side-channel signal for countermeasure design with analog circuit simulator","authors":"T. Amano, K. Iokibe, Y. Toyota","doi":"10.1109/ISEMC.2012.6351661","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351661","url":null,"abstract":"Side-channel attack is a cryptanalytic attack based on information gained from the physical implementation of a cryptographic IC. The simultaneous switching noise (SSN) current is generated as logic gates in cryptographic IC switch simultaneously in encryption processes. SSN current is a cause of electromagnetic interference (EMI). In this study, linear equivalent circuit modeling was examined for the sake of a developing method to evaluate cryptographic systems before fabrication. A linear equivalent circuit model of a cryptographic FPGA, in which an AES algorithm had been implemented, was determined from experimental measurements. The model was implemented into a commercial analog circuit simulator, and the SSN current was estimated under three configurations among which a decoupling circuit, used as a countermeasure, was changed. Estimated current traces were analyzed statistically by using the correlation power analysis (CPA) method to obtain correlation values, a major index security against side-channel attacks. Variation of the correlation values with a decoupling configuration agreed with the corresponding experimental results also obtained in this study. This means that the security of cryptographic devices against side-channel attacks based on analysis of the SSN current can be estimated by using the equivalent circuit model before fabrication.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132423291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhance the test reproducibility of radiated emission by defined cable termination 通过定义电缆终端，提高辐射发射测试的再现性
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351836
Bor-Lin Lee, Yi-Wei Wang, J.-P Wang
{"title":"Enhance the test reproducibility of radiated emission by defined cable termination","authors":"Bor-Lin Lee, Yi-Wei Wang, J.-P Wang","doi":"10.1109/ISEMC.2012.6351836","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351836","url":null,"abstract":"In this paper, we compared the measured radiated emission levels by real samples according to CISPR 22 at different laboratories. We observed the maximum test difference is 11.9dB over laboratories, which is much higher than claimed measurement instrument uncertainty. We studied various test conditions and concluded that the mains impedance of laboratory is the key factor to measured emission levels. The mechanism for the impedance to affect the radiated emission was explained. By using an impedance adapter to provide defined impedance for the cable termination, the test reproducibility was improved. The maximum test difference is reduced from 11.9dB to 6.4dB over laboratories.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131672180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analytical models for the frequency response of multi-layer graphene nanoribbon interconnects 多层石墨烯纳米带互连的频率响应分析模型
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351837
V. Kumar, A. Naeemi
{"title":"Analytical models for the frequency response of multi-layer graphene nanoribbon interconnects","authors":"V. Kumar, A. Naeemi","doi":"10.1109/ISEMC.2012.6351837","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351837","url":null,"abstract":"Analytical models for frequency response of multilayer graphene interconnects are obtained by a general multi-conductor analysis approach. The dependence of frequency response on the number of layers is studied for two types of contacts: top and side contacts. Although virtually all experiments on multi-layer graphene use top contacts that couple only to the top layer, the analytical models available consider side contacts that couple to all the layers. It is shown that for side contacts, the frequency response improves continuously with number of layers, unlike the top contacts, which show very little improvement beyond a few layers. The delay and energy-delay-product obtained from the frequency response are minimized at some optimal number of layers, which is dependent on the interconnect length.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129808113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Computational study of external fixation devices surface heating in MRI RF environment MRI射频环境下外固定装置表面加热的计算研究
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351691
Yan Liu, Jianxiang Shen, W. Kainz, Songsong Qian, Wen Wu, Ji Chen
{"title":"Computational study of external fixation devices surface heating in MRI RF environment","authors":"Yan Liu, Jianxiang Shen, W. Kainz, Songsong Qian, Wen Wu, Ji Chen","doi":"10.1109/ISEMC.2012.6351691","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351691","url":null,"abstract":"Heating effect by external fixation devices under MRI RF field was studied numerically for both 1.5-T and 3-T MRI systems. It is found that changing insertion depth and pin spacing could largely affect the surface heating level. In 1.5-T MRI, smaller insertion depth and larger pin spacing will produce larger temperature rise. However, for 3T system, the relation is not very clear when insertion depth became larger than 5cm or when pin spacing became larger than 20cm. Effect of connection bar material on external fixator is also studied and the heating mechanism of the device is analysed.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"396 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133674679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
CISPR 32 vs. ANSI C63.4: Color bars, scrolling H patterns, and the quasi-peak detector CISPR 32 vs. ANSI C63.4:色条、滚动H型和准峰值检测器
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351835
D. Arnett
{"title":"CISPR 32 vs. ANSI C63.4: Color bars, scrolling H patterns, and the quasi-peak detector","authors":"D. Arnett","doi":"10.1109/ISEMC.2012.6351835","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351835","url":null,"abstract":"This paper analyzes the radio emission differences between the display images specified under CISPR 32 and those specified under ANSI C63.4, with a focus on radiated emissions from information technology equipment and the characteristics of a quasi-peak detector.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124680808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A low-frequency model for E-field and B-field coupling into a folded antenna with two gaps 双间隙折叠天线中e场和b场耦合的低频模型
2012 IEEE International Symposium on Electromagnetic Compatibility Pub Date : 2012-11-12 DOI: 10.1109/ISEMC.2012.6351800
M. Perkins, M. Ong, C. L. Robbins
{"title":"A low-frequency model for E-field and B-field coupling into a folded antenna with two gaps","authors":"M. Perkins, M. Ong, C. L. Robbins","doi":"10.1109/ISEMC.2012.6351800","DOIUrl":"https://doi.org/10.1109/ISEMC.2012.6351800","url":null,"abstract":"Electric field coupling into electrically small monopoles/dipoles and magnetic field coupling into electrically small loop antennas has been investigated extensively due to their applicability to a wide range of applications. However, under certain conditions electrically small folded antenna structures exist in which both coupling mechanisms must be included simultaneously in order to perform an accurate system analysis. In this paper we present a low frequency model that includes both electric and magnetic field coupling simultaneously for a folded antenna with two gaps. Values for a circuit model are found using an electrostatic finite element code and a full wave frequency domain finite element code. The circuit model is then validated by a full wave finite difference time domain code. For the time domain analysis the antenna structure is excited by fields from a lightning pulse. The time domain simulation has excellent agreement with the circuit model that is presented.","PeriodicalId":197346,"journal":{"name":"2012 IEEE International Symposium on Electromagnetic Compatibility","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127704376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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