IEEE Technology Students' Symposium最新文献

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Speaker identification using utterances correspond to speaker-specific-text 说话人识别使用话语对应说话人特定文本
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783819
B. Bharathi, P. Vijayalakshmi, T. Nagarajan
{"title":"Speaker identification using utterances correspond to speaker-specific-text","authors":"B. Bharathi, P. Vijayalakshmi, T. Nagarajan","doi":"10.1109/TECHSYM.2011.5783819","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783819","url":null,"abstract":"In speaker recognition tasks, the main reason for reduced accuracy is due to closely resembling speakers in the acoustic space. Conventional GMM-based modelling technique captures unique features along with common features among various classes. Further, it ignores knowledge of phonetic content of the speech. In order to increase the discriminative power of the classifier, the system must be able to use only the unique features of a given speaker with respect to his/her acoustically closely resembling speaker. This paper proposes a technique to reduce the confusion errors, by finding speaker-specific phonemes and formulate a text using the subset of phonemes that are unique, for speaker identification task. Experiments have been conducted on speaker identification task using speech data of 192 female speakers from TIMIT corpus.The performance of the proposed system is compared with that of a conventional GMM-based technique and a significant improvement is noted.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126499329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Automated urban drinking water supply control and water theft identification system 城市饮水自动化控制及盗水识别系统
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783807
J. Gouthaman, R. Bharathwajanprabhu, A. Srikanth
{"title":"Automated urban drinking water supply control and water theft identification system","authors":"J. Gouthaman, R. Bharathwajanprabhu, A. Srikanth","doi":"10.1109/TECHSYM.2011.5783807","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783807","url":null,"abstract":"The rapid growing of the wide urban residential areas imposes the expansion as well as the modernization of the existing water supply facilities. Along with this one more problem is identified in the water supply channels, some people use ½ HP to 1 HP pump to suck the water directly from the channel of their home street. Process automation system based upon utilization of an industrial PLC and PC systems including all the network components represents the best way to improve the water distribution technological process. The water theft can be best monitored by the flow variations given by the flow sensors mounted on the channels. The system includes Remote Terminal Units - RTU, specific transducers and actuators distributed on a wide geographical area and control and power panels for the pump stations. The reliable instrumentation connected to PLC or RTU assure real time monitoring of the main technological parameters of large water distribution networks. The data acquired of SCADA system (Supervisory Control and Data Acquisition) represent the support for optimization of the process and data- driven Decision Support System. The system uses HMI implemented on PC to ensure the process supervision and remote control functions based on OPC technologies and wireless communication components for WAN data transfer. The complete SCADA system for water distribution enable the user to get a high operation safety of the network, a cost effective use of equipment, energy efficiency and optimize the daily operation and maintenance procedures.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
Control of stop band using spur line resonators of DGS based low pass filter 基于DGS低通滤波器的杂散线谐振器控制阻带
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783802
Ashwani Kumar, A. Verma
{"title":"Control of stop band using spur line resonators of DGS based low pass filter","authors":"Ashwani Kumar, A. Verma","doi":"10.1109/TECHSYM.2011.5783802","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783802","url":null,"abstract":"This paper examines the effect of the spur line resonators on the stop band of DGS based low pass filter. The spur line resonator is incorporated in the strip conductor to increase the rejection bandwidth. The 5-poles DGS based LPF with 2 and 4-spur line line resonators are used systematically to increase rejection in the stop band of the low pass filter. The 5-poles DGS based LPF with 2 spur line resonators on FR-4 substrate has 20 dB rejection up to 7.2 fc and 30 dB rejection up to 5.2 fc Use of 4 spur line resonators can increase the rejection up to 8.8 fc without increasing the size of LPF.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"255 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131433703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of voltage induced electrostatic forces on MEMS capacitive accelerometer 电压感应静电力对MEMS电容式加速度计的影响
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783825
B. Mukherjee, K. Swamy, S. Kar, S. Sen
{"title":"Effect of voltage induced electrostatic forces on MEMS capacitive accelerometer","authors":"B. Mukherjee, K. Swamy, S. Kar, S. Sen","doi":"10.1109/TECHSYM.2011.5783825","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783825","url":null,"abstract":"In this paper the effect of electrostatic forces due to applied excitation voltage on MEMS capacitive accelerometer has been presented. A set of parallel plates often termed as combs or fingers along with a proof mass and a set of spring constitute the basic structure of a capacitive accelerometer. Some of the fingers are fixed while others are movable. The proof mass moves so that the movable fingers attached with it with applied acceleration. This movement changes the gap between the fixed and movable fingers and capacitance between the fixed and movable fingers changes which is measured through proper electronic circuitry for electrical output. A few numbers of fingers are also included in the structure for self test purpose, called as actuation fingers. This type of structure is often tested electro-statically by applying external voltage signal to the actuation fingers. This external voltage on the actuation fingers generates electrostatic force which causes the proof mass along with the movable fingers attached with it to move. In this paper the effect of applied voltage and the electrostatic force caused by it has been analyzed. The nature of the displacement of the proof mass has also been described. In the electrostatic analysis semi double frequency component is observed when the structure is actuated with an external electrical voltage.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132603266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Characterization of electrode/electrolyte interface for bioimpedance study 生物阻抗研究中电极/电解质界面的表征
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783829
R. Pradhan, A. Mitra, Soumen Das
{"title":"Characterization of electrode/electrolyte interface for bioimpedance study","authors":"R. Pradhan, A. Mitra, Soumen Das","doi":"10.1109/TECHSYM.2011.5783829","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783829","url":null,"abstract":"The electrochemical impedance spectroscopy (EIS) methodology has been extensively used to study the different aspects of electrochemical and biomedical practices. This paper presents the numerical simulation of impedance for electrode/electrolyte interface. The COMSOLR Multiphysics is used to study the interface impedance. The technology for Micro Electro Mechanical system (MEMS) helps to fabricate miniature devices for the electrochemical study. In this work a MEMS based three electrode device along with Phosphate Buffered Solution (PBS) is simulated using COMSOL Multiphysics to find out the impedance of interface. PBS is used as physiological medium for most biological studies and also used to stabilize the microelectrodes under testing. The impedance obtained from COMSOL Multiphysics is processed with an equivalent circuit simulator named as ZsimpWin to find the viability of impedance of electrode/electrolyte interface.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132278731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A compact-size microstrip rat-race coupler with high performance 一种紧凑尺寸的高性能微带老鼠赛跑耦合器
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783801
V. K. Velidi, Sarika Shrivastava, S. Sanyal
{"title":"A compact-size microstrip rat-race coupler with high performance","authors":"V. K. Velidi, Sarika Shrivastava, S. Sanyal","doi":"10.1109/TECHSYM.2011.5783801","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783801","url":null,"abstract":"A compact slow-wave microstrip rat-race coupler is presented. The present asymmetrical T-structure slow-wave loading achieves size reduction more than that obtained using traditional symmetrical T-structure along with wide range harmonic suppression performance. Lossless transmission line model is used to derive the design equations. A compact RRC occupying only 34% of the conventional RRC at 1.0 GHz with no harmonic passband up to 6.0 GHz is demonstrated for validation using two fullwave electromagnetic simulators and the results are in good agreement.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125652259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile 非均匀基极掺杂情况下InP/InGaAs异质结双极晶体管基极传输时间和早期电压的分析建模
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783823
S. Chowdhury, Sukla Basu
{"title":"Analytical modelling of base transit time and early voltage of InP/InGaAs Heterojunction Bipolar Transistor for nonuniform base doping profile","authors":"S. Chowdhury, Sukla Basu","doi":"10.1109/TECHSYM.2011.5783823","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783823","url":null,"abstract":"InP/InGaAs Heterojunction Bipolar Transistors have increasingly become important due to their high speed performance. Base transit time is an important factor to determine the speed of these devices. An analytical model is developed here to predict the variation of base transit time (τb) and Early voltage (VA) with composition of InGaAs base, as well as with base doping profile. Dependance of band gap on composition is also taken into account in the model.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134413360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A comparative study between a micromechanical cantilever resonator and MEMS-based passives for band-pass filtering application 微机械悬臂谐振器与基于mems的无源带通滤波器的比较研究
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783824
Joydeep Basu, A. Bhattacharya, S. Chakraborty, T. K. Bhattacharyya
{"title":"A comparative study between a micromechanical cantilever resonator and MEMS-based passives for band-pass filtering application","authors":"Joydeep Basu, A. Bhattacharya, S. Chakraborty, T. K. Bhattacharyya","doi":"10.1109/TECHSYM.2011.5783824","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783824","url":null,"abstract":"Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver components. This is due to some excellent properties of the MEMS devices like low loss, excellent isolation etc. in the microwave frequency domain where the on-chip passives normally tend to become leakier and degrades the transceiver performance. This paper presents a comparative analysis between MEMS-resonator based and MEMS-passives based band-pass filter configurations for RF applications, along with their design, simulation, fabrication and characterization. The filters were designed to have a center frequency of 455 kHz, meant for use as the intermediate frequency (IF) filter in superheterodyne receivers. The filter structures have been fabricated in PolyMUMPs process, a three-polysilicon layer surface micromachining process.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121302824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A formal analysis of protocol-independent security threats in VANETs VANETs中协议无关安全威胁的形式化分析
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783810
Neelanjana Dutta, Raghavendra Kotikalapudi, Makarand V. Bhonsle
{"title":"A formal analysis of protocol-independent security threats in VANETs","authors":"Neelanjana Dutta, Raghavendra Kotikalapudi, Makarand V. Bhonsle","doi":"10.1109/TECHSYM.2011.5783810","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783810","url":null,"abstract":"Vehicular Ad Hoc networks (VANETs) are fast emerging as the dominant model for intelligent traffic control. In the recent years, increasing number of researchers investigated various privacy and security issues such as key management, identity and location based attacks etc. and suggested protocols to defend against these issues. In this paper, we use data centric approach and formal security models to identify protocol-independent security issues inherent in VANETs. In particular, we analyze how message latency can be exploited in time critical services such as collision warning, disaster alerts etc. We introduce the concept of Zero Barrier for time critical services and derive key conditions to be satisfied whenever a new protocol is considered.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129922067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
ASIC implementation of a 512-point FFT/IFFT processor for 2D CT image reconstruction algorithm ASIC实现了一种512点FFT/IFFT处理器用于二维CT图像重建的算法
IEEE Technology Students' Symposium Pub Date : 2011-06-02 DOI: 10.1109/TECHSYM.2011.5783849
I. Hatai, Rakesh Biswas, S. Banerjee
{"title":"ASIC implementation of a 512-point FFT/IFFT processor for 2D CT image reconstruction algorithm","authors":"I. Hatai, Rakesh Biswas, S. Banerjee","doi":"10.1109/TECHSYM.2011.5783849","DOIUrl":"https://doi.org/10.1109/TECHSYM.2011.5783849","url":null,"abstract":"The CT scan medical imaging requires huge amount of computations for reconstructing the images. Modified Fast Radon Transform (MFRT) uses FFT based parallel algorithm for reconstruction of 2D/3D CT images from its sonogram data using convolution operation by concurrent 1D FFT/IFFT and matrix multiplications. To achieve optimum hardware utilization with low power consumption an FFT module, based on iterative radix-2 decimation in frequency (DIF) algorithm, has been designed and implemented. The module has been designed in such way so that it can also be used for IFFT computation only by changing a single parameter. To compute the FFT, the twiddle factor has been calculated using Coordinate Rotation Digital Computer (CORDIC), by steering the data properly in the butterfly structure. The synthesized frequency of FFT/IFFT module is 220 MHz and gate count is 1,040,136 using 130 nm faraday digital libraries. The power has been analyzed using prime power and the value of the power consumption is 15mW. The designed FFT/IFFT ASIC chip is very much suitable for low-area and low power biomedical applications like CT image reconstruction, Doppler wave spectrogram etc.","PeriodicalId":193763,"journal":{"name":"IEEE Technology Students' Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130323556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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