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2009 High Power Diode Lasers and Systems Conference最新文献

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Numerical emulation of the degradation of 975nm high power tapered laser bars 975nm大功率锥形激光棒衰减的数值模拟
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5364831
C. K. Amuzuvi, S. Bull, J.J. Lim, S. Sujecki, E. Larkins
{"title":"Numerical emulation of the degradation of 975nm high power tapered laser bars","authors":"C. K. Amuzuvi, S. Bull, J.J. Lim, S. Sujecki, E. Larkins","doi":"10.1109/HPD.2009.5364831","DOIUrl":"https://doi.org/10.1109/HPD.2009.5364831","url":null,"abstract":"We have demonstrated the simulation tool for both single and multiple emitters. Investigations of a model bar with a non-uniform temperature distribution showed that the hotter emitters at the centre of the bar drew more current and emitted higher powers, but also degraded faster than the cooler edge emitters. Similar behaviour has been observed experimentally. However, the simulation results for a real bar showed poor agreement with the observed power distribution. This was attributed to thermal crosstalk between the emitters and is being addressed by the introduction of a global thermal model to Barlase.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122144468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra-large optical cavity diode lasers for high power high efficiency narrow spectral linewidth applications 大功率、高效率、窄谱线宽应用的超大光腔二极管激光器
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5366562
P. Crump, H. Wenzel, B. Sumpf, G. Erbert
{"title":"Ultra-large optical cavity diode lasers for high power high efficiency narrow spectral linewidth applications","authors":"P. Crump, H. Wenzel, B. Sumpf, G. Erbert","doi":"10.1109/HPD.2009.5366562","DOIUrl":"https://doi.org/10.1109/HPD.2009.5366562","url":null,"abstract":"The use of ultra large optical waveguides enables significant advances in the spectral and spatial brightness of diode lasers, as required for improved industrial laser systems. A review of recent progress in performance is presented.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128342372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and realization of high power semiconductor lasers 高功率半导体激光器的设计与实现
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5362771
J. Boucart, S. Pawlik, A. Guarino, B. Sverdlov, J. Mueller, R. Todt, M. Krejci, N. Lichtenstein
{"title":"Design and realization of high power semiconductor lasers","authors":"J. Boucart, S. Pawlik, A. Guarino, B. Sverdlov, J. Mueller, R. Todt, M. Krejci, N. Lichtenstein","doi":"10.1109/HPD.2009.5362771","DOIUrl":"https://doi.org/10.1109/HPD.2009.5362771","url":null,"abstract":"In this paper we present latest developments on devices at 800–1020nm with a peak wall plug efficiency 68% at 120W at 980nm. New applications are now driving the need for other wavelengths such as 790nm and 1400–1600nm. By using non wavelength specific build standards we show how high power and brightness can also be provided for this extended wavelength range.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133533993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectroscopic simulation of tapered laser diodes 锥形激光二极管的光谱模拟
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5363414
J.J. Lim, E. Larkins, P. Bream, N. Michel, M. Krakowski, S. Sujecki
{"title":"Spectroscopic simulation of tapered laser diodes","authors":"J.J. Lim, E. Larkins, P. Bream, N. Michel, M. Krakowski, S. Sujecki","doi":"10.1109/HPD.2009.5363414","DOIUrl":"https://doi.org/10.1109/HPD.2009.5363414","url":null,"abstract":"In this work, we have presented a description of our spectral laser model and performed spectroscopic simulations of a 975 nm tapered laser diode. To verify the ASE model, we checked the extracted gain using the variable stripe length method. A good agreement between the simulated and measured emission linewidth could be obtained using a spontaneous emission coupling factor of 1×10−16. The simulated red-shift in the peak emission wavelength with increasing bias is consistent with experiment and is attributed to self-heating effects.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"12 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133667182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low fill factor diode laser bars with high brilliance from 808 nm to 1020 nm for fibre coupling 用于光纤耦合的高亮度808 nm至1020 nm的低填充因子二极管激光棒
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5365912
R. Fehse, H. Konig, G. Gronninger, C. Lauer, U. Strauss, H. Kissel, M. Puschmann, J. Biesenbach
{"title":"Low fill factor diode laser bars with high brilliance from 808 nm to 1020 nm for fibre coupling","authors":"R. Fehse, H. Konig, G. Gronninger, C. Lauer, U. Strauss, H. Kissel, M. Puschmann, J. Biesenbach","doi":"10.1109/HPD.2009.5365912","DOIUrl":"https://doi.org/10.1109/HPD.2009.5365912","url":null,"abstract":"In recent years high brilliance semiconductor diode lasers are gaining attraction for the industrial laser market. The emerging generation of multi kilowatt fibre lasers require brilliant pump sources and additionally fibre coupled direct diode lasers increasingly compete with solid state lasers in many industrial areas. This paper investigates diode lasers, which combine several advantages from single emitters and high fill factor laser bars when considering fibre coupling applications. New facet technologies enable the laser to be driven at higher powers per emitter allowing a reduction in fill factor without penalty in total output power per laser bar. These low fill factor bars enable reliable and efficient operation at output power densities comparable to single emitters. The resulting beam parameters allow coupling into a single fibre with low effort in beam shaping or fibre combining.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129174576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Beam conditioning of high power diode lasers 高功率二极管激光器的光束调理
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5362876
R. McBride
{"title":"Beam conditioning of high power diode lasers","authors":"R. McBride","doi":"10.1109/HPD.2009.5362876","DOIUrl":"https://doi.org/10.1109/HPD.2009.5362876","url":null,"abstract":"PowerPhotonic's fabrication process allows the economic manufacture of application-specific and device-specific micro-optics without incurring high tooling costs. The flexibility of this process allows a wide range of optical functions to be implemented, including wavefront compensators, slow-axis collimators and beam transformers. The process allows multiple functions to be integrated into a single optic, resulting in a simpler system design and a reduced bill of materials.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125253171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
External-cavity designs for phase-coupled laser diode arrays 相耦合激光二极管阵列的外腔设计
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5363600
G. Lucas-Leclin, D. Paboeuf, P. Georges, N. Michel, M. Calligaro, M. Krakowski, J. Lim, S. Sujecki, E. Larkins
{"title":"External-cavity designs for phase-coupled laser diode arrays","authors":"G. Lucas-Leclin, D. Paboeuf, P. Georges, N. Michel, M. Calligaro, M. Krakowski, J. Lim, S. Sujecki, E. Larkins","doi":"10.1109/HPD.2009.5363600","DOIUrl":"https://doi.org/10.1109/HPD.2009.5363600","url":null,"abstract":"Both configurations have been extensively studied theoretically as well as experimentally. We have obtained a stable coherent operation of the laser arrays, on a single transverse array mode. The main advantage of the angular filtering cavity is here that it is perfectly adapted to the high filling-factor laser bar, and then provides directly a nearly diffraction-limited output beam; nevertheless these bars have limited output powers because of the strong heating of the array. On the other hand, Talbot external cavities may be used with very different kind of bars, in simple extended-cavity designs. Finally, the use of the filtering properties of VBG has been demonstrated to efficiently control the laser emission.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114527348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multimode interference coupled array laser 多模干涉耦合阵列激光器
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5363286
A. C. Bryce, M. Murad, V. Loyo-Maldonado
{"title":"Multimode interference coupled array laser","authors":"A. C. Bryce, M. Murad, V. Loyo-Maldonado","doi":"10.1109/HPD.2009.5363286","DOIUrl":"https://doi.org/10.1109/HPD.2009.5363286","url":null,"abstract":"We have successfully demonstrated 1×4 MMI array laser diode which is locked in phase achieving power in excess of 400 mW from a single mode output waveguide with slope efficiency of 20 % per facet. Far field measured at FWHM being 16.1° at 418 mW and remained single lobed as the drive current was increased. This is an improvement over using single ridge waveguide by a factor of three when the same active length is used","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121037427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
100W, single mode, single polarization, picosecond, ytterbium doped fibre MOPA frequency doubled to 530 nm 100W，单模，单偏振，皮秒，掺镱光纤MOPA频率翻倍至530 nm
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5366532
K. Chen, S. Alam, J. Hayes, D. Lin, A. Malinowski, D. Richardson
{"title":"100W, single mode, single polarization, picosecond, ytterbium doped fibre MOPA frequency doubled to 530 nm","authors":"K. Chen, S. Alam, J. Hayes, D. Lin, A. Malinowski, D. Richardson","doi":"10.1109/HPD.2009.5366532","DOIUrl":"https://doi.org/10.1109/HPD.2009.5366532","url":null,"abstract":"We have successfully demonstrated a 100W, linearly polarized, near diffraction-limited, 20ps pulse source at 1.06µm based on a fiberised YDFA MOPA seeded by a GS-laser diode. Pulse energies to 0.85µJ and peak powers ≫ 40kW were obtained when operating at a repetition rate of 113.5MHz. Our experimental results show that further power scaling should be possible. Such high average power, single-polarization, near diffraction-limited, ps sources are attractive for high power nonlinear frequency conversion and material processing applications. We have also generated 45W of green light at 530nm at an overall conversion efficiency of 45% by using an LBO crystal. Further power scaling is currently limited by the spectral integrity of the fundamental light. It should be possible to improve the conversion efficiency further by optimizing the final stage amplifier.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121025772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Asymmetric feedback external cavity laser diodes: Comparison of experiment and simulation 非对称反馈外腔激光二极管:实验与仿真比较
2009 High Power Diode Lasers and Systems Conference Pub Date : 2009-12-28 DOI: 10.1109/HPD.2009.5363685
L. Lang, J.J. Lim, S. Bull, B. Thestrup, S. Sujecki, N. M. ichel, P. Petersen, M. Krakowski, E. Larkins
{"title":"Asymmetric feedback external cavity laser diodes: Comparison of experiment and simulation","authors":"L. Lang, J.J. Lim, S. Bull, B. Thestrup, S. Sujecki, N. M. ichel, P. Petersen, M. Krakowski, E. Larkins","doi":"10.1109/HPD.2009.5363685","DOIUrl":"https://doi.org/10.1109/HPD.2009.5363685","url":null,"abstract":"In conclusion, we have shown that it is possible to provide selective feedback to a particular lateral mode from the external cavity using an asymmetric feedback technique. The simulation and experiment show a good agreement with respect to spatial hole burning and the far-field distribution.","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133040670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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