Low fill factor diode laser bars with high brilliance from 808 nm to 1020 nm for fibre coupling

R. Fehse, H. Konig, G. Gronninger, C. Lauer, U. Strauss, H. Kissel, M. Puschmann, J. Biesenbach
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Abstract

In recent years high brilliance semiconductor diode lasers are gaining attraction for the industrial laser market. The emerging generation of multi kilowatt fibre lasers require brilliant pump sources and additionally fibre coupled direct diode lasers increasingly compete with solid state lasers in many industrial areas. This paper investigates diode lasers, which combine several advantages from single emitters and high fill factor laser bars when considering fibre coupling applications. New facet technologies enable the laser to be driven at higher powers per emitter allowing a reduction in fill factor without penalty in total output power per laser bar. These low fill factor bars enable reliable and efficient operation at output power densities comparable to single emitters. The resulting beam parameters allow coupling into a single fibre with low effort in beam shaping or fibre combining.
用于光纤耦合的高亮度808 nm至1020 nm的低填充因子二极管激光棒
近年来,高亮度半导体二极管激光器越来越受到工业激光器市场的青睐。新兴一代的多千瓦光纤激光器需要明亮的泵浦源,此外,光纤耦合直接二极管激光器在许多工业领域日益与固态激光器竞争。本文研究的二极管激光器,在考虑光纤耦合应用时,结合了单发射器和高填充因子激光器的优点。新的facet技术使激光器能够以每个发射器更高的功率驱动,从而减少填充因子,而不会影响每个激光棒的总输出功率。这些低填充系数条在输出功率密度可与单个发射器相媲美时实现可靠和高效的操作。所得到的光束参数允许在光束整形或光纤组合中以较低的努力耦合成单个光纤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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