{"title":"多模干涉耦合阵列激光器","authors":"A. C. Bryce, M. Murad, V. Loyo-Maldonado","doi":"10.1109/HPD.2009.5363286","DOIUrl":null,"url":null,"abstract":"We have successfully demonstrated 1×4 MMI array laser diode which is locked in phase achieving power in excess of 400 mW from a single mode output waveguide with slope efficiency of 20 % per facet. Far field measured at FWHM being 16.1° at 418 mW and remained single lobed as the drive current was increased. This is an improvement over using single ridge waveguide by a factor of three when the same active length is used","PeriodicalId":191925,"journal":{"name":"2009 High Power Diode Lasers and Systems Conference","volume":"244 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multimode interference coupled array laser\",\"authors\":\"A. C. Bryce, M. Murad, V. Loyo-Maldonado\",\"doi\":\"10.1109/HPD.2009.5363286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully demonstrated 1×4 MMI array laser diode which is locked in phase achieving power in excess of 400 mW from a single mode output waveguide with slope efficiency of 20 % per facet. Far field measured at FWHM being 16.1° at 418 mW and remained single lobed as the drive current was increased. This is an improvement over using single ridge waveguide by a factor of three when the same active length is used\",\"PeriodicalId\":191925,\"journal\":{\"name\":\"2009 High Power Diode Lasers and Systems Conference\",\"volume\":\"244 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 High Power Diode Lasers and Systems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HPD.2009.5363286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 High Power Diode Lasers and Systems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HPD.2009.5363286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have successfully demonstrated 1×4 MMI array laser diode which is locked in phase achieving power in excess of 400 mW from a single mode output waveguide with slope efficiency of 20 % per facet. Far field measured at FWHM being 16.1° at 418 mW and remained single lobed as the drive current was increased. This is an improvement over using single ridge waveguide by a factor of three when the same active length is used