发布求助
文献互助 智能选刊 最新文献

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.最新文献

筛选
英文 中文
A combined R/sub G//C/sub F/ large-signal extraction methodology to improve CMOS SPICE-parameter precision 一种R/sub / G/ C/sub - F/大信号联合提取方法提高CMOS spice参数精度
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI: 10.1109/ICMTS.2002.1193181
S. Mecking, A. Korbel, E. Paparisto, U. Langmann
{"title":"A combined R/sub G//C/sub F/ large-signal extraction methodology to improve CMOS SPICE-parameter precision","authors":"S. Mecking, A. Korbel, E. Paparisto, U. Langmann","doi":"10.1109/ICMTS.2002.1193181","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193181","url":null,"abstract":"This paper presents a simple and efficient parameter extraction methodology, based on time-domain large-signal measurements of two ring oscillators as test structures. This experimentally confirmed technique is a new tool for determining the parasitic gate resistance R/sub G/ and for a fine tuning of the fringing capacitance C/sub F/ of MOS transistors in one step. Thus CMOS switching speed can be predicted more accurately, compared to conventional parameter tuning methodologies and the expenditure of SPICE parameter extractions can be reduced.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127803851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis 电学测试结构参考特征线宽的自动相衬图像分析
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI: 10.1109/ICMTS.2002.1193161
B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito
{"title":"Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis","authors":"B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito","doi":"10.1109/ICMTS.2002.1193161","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193161","url":null,"abstract":"NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130445023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs 亚四分之一微米cmosfet热载子诱导光发射光谱分析的测试结构
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI: 10.1109/ICMTS.2002.1193178
S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma
{"title":"A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs","authors":"S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma","doi":"10.1109/ICMTS.2002.1193178","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193178","url":null,"abstract":"Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121489462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Test structures for analyzing radiation effects in bipolar technologies 分析双极技术辐射效应的试验结构
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 1900-01-01 DOI: 10.1109/ICMTS.2002.1193196
H. Barnaby, peixiong zhao, K. Galloway, D. Ball, R. Pease, P. Fouillat
{"title":"Test structures for analyzing radiation effects in bipolar technologies","authors":"H. Barnaby, peixiong zhao, K. Galloway, D. Ball, R. Pease, P. Fouillat","doi":"10.1109/ICMTS.2002.1193196","DOIUrl":"https://doi.org/10.1109/ICMTS.2002.1193196","url":null,"abstract":"Structures integrated onto BiCMOS test chips were specially designed to characterize the complex mechanisms related to radiation effects in bipolar technologies. Bipolar devices from two commercial processes were modified to include independent gate terminals. Through the use of gate control, the effects of radiation-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative, experimentally verified, description of the non-linear relationship between the radiation defects and electrical response at both the device and circuit level.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131659721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信