亚四分之一微米cmosfet热载子诱导光发射光谱分析的测试结构

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193178

S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma

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引用次数: 2

摘要

采用特别设计的通道宽度为2.0 mm的测试结构，分析了亚四分之一微米cmosfet的热载子诱导光发射，以获得足够的光发射强度。由于测试结构由并联的单元mosfet组成，且光电发射图像均匀，因此可以估计测量的光谱与单元mosfet的光谱相同。光子数与光子能量的关系表明光子能量具有玻尔兹曼分布;exp(-h/spl nu//kT/ e/)

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A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs

Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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