电学测试结构参考特征线宽的自动相衬图像分析

B. A. am Ende, M. Cresswell, R. Allen, T. Headley, W. Guthrie, L. W. Linholm, E. H. Bogardus, C. E. Murabito
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引用次数: 7

摘要

NIST,桑迪亚国家实验室,国际SEMATECH正在开发一种新型的线宽的校准标准光刻的关键维度(CD)计量仪器控制。标准参考特征是电路线宽测试结构的电桥,该电路线宽测试结构在单晶硅薄膜中进行图像化。通过高分辨率透射电子显微镜(HRTEM)生成的每个晶圆上桥特征样本横截面的相衬图像,用于跟踪标准参考特征的测量电线宽度到硅的晶格常数。本文描述了相衬图像的自动分析,该分析是为了最小化成本和标准线宽的不确定性而开发的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis
NIST, Sandia National Laboratories, and International SEMATECH are developing a new type of linewidth standard for calibrating Critical Dimension (CD) metrology instruments for lithographic process control. The standard reference feature is the bridge of an electrical linewidth test structure that is patterned in a monocrystalline silicon film. Phase-contrast images of the cross sections of a sample of the bridge features on each wafer, produced by High-Resolution Transmission-Electron Microscopy (HRTEM), are used to trace the measured electrical linewidths of the standard reference feature to the lattice constant of silicon. This paper describes the automated analysis of the phase-contrast images that was developed in order to minimize the cost and uncertainty of the linewidths of the standards.
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