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Microwave and Optical Technology Letters最新文献

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Design of a Bandpass Continuous Class-F Filtering Power Amplifier Based on a Terminated Coupled Lines Structure 基于端接耦合线结构的带通连续 F 类滤波功率放大器的设计
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-21 DOI: 10.1002/mop.70039
Chenlu Wang, Zhiwei Zhang, Luyu Zhang, Chao Gu
{"title":"Design of a Bandpass Continuous Class-F Filtering Power Amplifier Based on a Terminated Coupled Lines Structure","authors":"Chenlu Wang,&nbsp;Zhiwei Zhang,&nbsp;Luyu Zhang,&nbsp;Chao Gu","doi":"10.1002/mop.70039","DOIUrl":"https://doi.org/10.1002/mop.70039","url":null,"abstract":"<div>\u0000 \u0000 <p>This paper presents a filtered power amplifier (PA) based on the continuous class-F mode. This broadband filtering PA employs a terminated coupled line structure, which consists of coupled line segments and four terminations loaded on them for obtaining high efficiency over a wide frequency band. Also, a detailed theoretical analysis and calculation of the proposed termination coupling line structure is given. The filter plays the role of filtering and impedance matching simultaneously, and thus high-order harmonics of the filtering PA are suppressed. For verification, the proposed PA is designed, fabricated, and measured. The measurement results show that a drain efficiency of 60.5%–69.8%, a gain of more than 10 dB, and an output power of 40.2–42.4 dBm are achieved in the target frequency band.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 26-GHz Low Noise Amplifier With 16-dB Minimum Noise Figure in 015-μm GaN-on-SiC Process 采用 015μm 硅基氮化镓工艺制造的 26 GHz 低噪声放大器，具有 16 分贝最小噪声系数
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-20 DOI: 10.1002/mop.70038
Fengyuan Mao, Zhijian Chen, Bin Li, Zhaohui Wu, Xinhuang Chen, Siyuan Yang
{"title":"A 26-GHz Low Noise Amplifier With 16-dB Minimum Noise Figure in 015-μm GaN-on-SiC Process","authors":"Fengyuan Mao,&nbsp;Zhijian Chen,&nbsp;Bin Li,&nbsp;Zhaohui Wu,&nbsp;Xinhuang Chen,&nbsp;Siyuan Yang","doi":"10.1002/mop.70038","DOIUrl":"https://doi.org/10.1002/mop.70038","url":null,"abstract":"<div>\u0000 \u0000 <p>A 24.8–29.1-GHz four-stage gallium nitride (GaN) low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter which is fabricated in a 0.15-μm GaN-on-SiC process. The proposed GaN LNA utilizes gate/drain bypass networks and source degeneration (SD) to achieve both 0–40-GHz unconditional stability and broadband simultaneous noise and input matching (SNIM). The measured results show a peak gain of 19.9 dB with a 3-dB bandwidth of 4.3 GHz and a low noise figure (NF) of 1.58–2.57 dB. The input and output return losses are better than 11 dB and the output-referred third-order intercept point (OIP3) is greater than 21 dBm. The presented LNA has a core area of 4.2 mm<sup>2</sup> and consumes a power dissipation of 150 mW. Compared with other state-of-the-art GaN LNA designs, the proposed LNA exhibits competitive NF and overall performance.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142685244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SIW Broadband Circularly Polarized High-Gain Low-Profile Magneto-Electric Dipole Antenna Array SIW 宽带圆极化高增益低剖面磁电偶极天线阵列
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-20 DOI: 10.1002/mop.70033
Juan Xu, Yue Xie, Jianping Zhao
{"title":"SIW Broadband Circularly Polarized High-Gain Low-Profile Magneto-Electric Dipole Antenna Array","authors":"Juan Xu,&nbsp;Yue Xie,&nbsp;Jianping Zhao","doi":"10.1002/mop.70033","DOIUrl":"https://doi.org/10.1002/mop.70033","url":null,"abstract":"<div>\u0000 \u0000 <p>This study presents a substrate integrated waveguide (SIW) broadband circularly polarized (CP) high-gain low-profile magneto-electric dipole antenna array. The antenna array is characterized by wide impedance bandwidth (IBW), novel CP operating principle, small form factor, and good radiation performance. First, the antenna element consists of a two-layer dielectric substrate, two pairs of magneto-electric dipoles, and a SIW cavity coupled and fed through a cross-shaped rectangular slit. To achieve a wide CP bandwidth (BW), a pair of magneto-electric dipoles is rectangularly chamfered and then an “L” type parasitic patch is introduced. The simulation results show that the antenna element has an axial ratio (AR) BW of 14.2% in the 31.48–36.16 GHz range, the IBW in the 29.08–35.98 GHz range is 21.2%, and the gain is greater than 8 dBic in all bands. The antenna exhibits stable patterns and wide overlap IBW (31.48–35.98 GHz). Then, a planar 2 × 2 antenna array fed by a one-part-four SIW power divider was designed, fabricated, and measured. The measured results show that the array has an ARBW of 14% in the range of 31.29−35.83 GHz, an IBW of 21.8% in the range of 29.28–35.83 GHz, and a peak gain of 14.1 dBic.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142674077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Microstrip Quasi-Elliptic Bandpass Filter With Ultrabroad Reflectionless Range and High Selectivity 具有超宽无反射范围和高选择性的紧凑型微带准椭圆带通滤波器
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-19 DOI: 10.1002/mop.70029
Awei Zhang, Jinping Xu, Zhiqiang Liu
{"title":"Compact Microstrip Quasi-Elliptic Bandpass Filter With Ultrabroad Reflectionless Range and High Selectivity","authors":"Awei Zhang,&nbsp;Jinping Xu,&nbsp;Zhiqiang Liu","doi":"10.1002/mop.70029","DOIUrl":"https://doi.org/10.1002/mop.70029","url":null,"abstract":"<div>\u0000 \u0000 <p>In this letter, a method of designing quasi-elliptic bandpass filter with ultrabroad reflectionless bandwidth and high selectivity is proposed. It is implemented on the basis of a quasi-elliptic absorptive lowpass filter (ALPF) prototype that features both a low-reflection response over all normalized frequencies and two controllable transmission zeros near the passband. A distributed-element absorptive bandpass filter (ABPF) scheme using coupled-line units is derived from this quasi-elliptic ALPF prototype. With this distributed-element ABPF scheme, both ultrabroad reflectionless bandwidth and compact size can be realized. Equations for closed-form design are derived. A microstrip ABPF operating at 2.0 GHz (i.e., <i>f</i><sub>0</sub>) is designed for validation. The measured roll-off rates of the upper and lower transition bands are 116.44 and 157.41 dBc/GHz, respectively. The return loss is better than 10 dB from direct current to 6.25<i>f</i><sub>0</sub>. The size of the overall circuit is 0.12<i>λ</i><sub>g</sub><sup>2</sup>.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142674087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Rapid Optimization Procedure of a Compact Broadband Microstrip Diplexer for VHF/UHF Band VHF/UHF 频带紧凑型宽带微带双工器的设计与快速优化程序
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-17 DOI: 10.1002/mop.70037
Penghao Feng, Binke Huang, Juan Chen, Sen Yan
{"title":"Design and Rapid Optimization Procedure of a Compact Broadband Microstrip Diplexer for VHF/UHF Band","authors":"Penghao Feng,&nbsp;Binke Huang,&nbsp;Juan Chen,&nbsp;Sen Yan","doi":"10.1002/mop.70037","DOIUrl":"https://doi.org/10.1002/mop.70037","url":null,"abstract":"<div>\u0000 \u0000 <p>In this paper, a design procedure of a compact broadband microstrip diplexer working on the Very High Frequency (VHF)/Ultrahigh Frequency (UHF) band is proposed. The diplexer consists of a fourth-order Butterworth Low-Pass Filter (LPF) and a sixth-order elliptic High-Pass Filter (HPF). The two filters are located on two substrates with a common ground. A microstrip-to-coaxial structure is utilized to transmit the power flow between the two substrates. For miniaturization, the utilized ideal capacitors and inductors are realized by the commercial lumped-element capacitors and the curved microstrip line sections, respectively. All the middle design and rapid optimization processes from the schematic simulation by Advanced Design System (ADS) to the circuit simulation by CST STUDIO SUITE (CST) are given in the article. A prototype is fabricated and measured. The testing results are consistent with the simulation. The diplexer can operate at 225–775 and 880–2500 MHz. The insertion losses are 0.8 ± 0.3 and 0.9 ± 0.4 dB in the two working bandwidths. The isolation bandwidth of −20 dB level is as small as 105 MHz. The roll-off is also sharp that the related bandwidths corresponding to the attenuation level −3 to −20d B are 90 and 30 MHz to the high and low bands, respectively. Besides, the return loss and isolation are larger than 10 and 20 dB approximately. The diplexer has a volume of 0.065 <i>λ</i><sub>g</sub> × 0.156 <i>λ</i><sub>g</sub> @775 MHz, which can be utilized to feed the miniaturized broadband VHF/UHF antenna system.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Miniaturized SISL Bandpass Filter Based on Deep Hole Drilling Capacitor 基于深孔钻电容器的微型 SISL 带通滤波器
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-15 DOI: 10.1002/mop.70027
Yun-Yang Xu, Yi-Hao Ma, Qi Qiang Liu, Yue Hu, Jing Wang, Wen-Sheng Zhao
{"title":"A Miniaturized SISL Bandpass Filter Based on Deep Hole Drilling Capacitor","authors":"Yun-Yang Xu,&nbsp;Yi-Hao Ma,&nbsp;Qi Qiang Liu,&nbsp;Yue Hu,&nbsp;Jing Wang,&nbsp;Wen-Sheng Zhao","doi":"10.1002/mop.70027","DOIUrl":"https://doi.org/10.1002/mop.70027","url":null,"abstract":"<div>\u0000 \u0000 <p>In this paper, a quasi-lumped element-based bandpass filter is implemented by substrate-integrated suspended line (SISL) technology. To miniaturize the filter size, a deep hole drilling capacitor (DHDC) structure is proposed. The properties of DHDC are derived by parametric analysis and equivalent circuit analysis. Based on derived properties, a quasi-lumped element bandpass filter using SISL technology is designed and fabricated. Experimental results demonstrate that the proposed bandpass filter achieves the center frequency <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 \u0000 <mrow>\u0000 <msub>\u0000 <mi>f</mi>\u0000 \u0000 <mn>0</mn>\u0000 </msub>\u0000 </mrow>\u0000 </mrow>\u0000 <annotation> ${{boldsymbol{f}}}_{{boldsymbol{0}}}$</annotation>\u0000 </semantics></math> of 1.48 GHz, with a fractional bandwidth of 50%. The minimum insertion loss within the passband is 0.96 dB, while the return loss exceeds 23.14 dB. The maximum out-of-band suppression is over −50 dB, and the filter size is only 0.172 <i>λ</i><sub><i>g </i></sub>× 0.062 <i>λ</i><sub><i>g</i></sub>.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of On-Chip Multi-Slot Chalcogenide Waveguide for Mid-Infrared Methane Sensing 设计用于中红外甲烷传感的片上多槽卤化铝波导
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-15 DOI: 10.1002/mop.70036
Ningbo Ma, Zhengkun Qin, Mingquan Pi, Xueying Wang, Chuantao Zheng, Yuting Min, Huan Zhao, Mingxing Song
{"title":"Design of On-Chip Multi-Slot Chalcogenide Waveguide for Mid-Infrared Methane Sensing","authors":"Ningbo Ma,&nbsp;Zhengkun Qin,&nbsp;Mingquan Pi,&nbsp;Xueying Wang,&nbsp;Chuantao Zheng,&nbsp;Yuting Min,&nbsp;Huan Zhao,&nbsp;Mingxing Song","doi":"10.1002/mop.70036","DOIUrl":"https://doi.org/10.1002/mop.70036","url":null,"abstract":"<div>\u0000 \u0000 <p>A chalcogenide (ChG) multi-slot waveguide gas sensor with ChG as the core layer and silicon dioxide (SiO<sub>2</sub>) as the under-cladding layer is proposed. Multi-slot waveguide can be used in the mid-infrared gas measurement. The optimized power confinement factor (PCF) of the ChG multi-slot waveguide can be up to 41.3%, which is ∼20% higher than that of the optimized single-slot waveguide. At the absorption line located at 3.291 μm for methane (CH<sub>4</sub>) measurement, the limits of detection (LoD) of single-slot, double-slot, triple-slot, quadruple-slot waveguide sensors are determined to be 68.9, 57.4, 52, 48.6 parts per million (ppm), respectively. Compared with other waveguide sensors in the mid-infrared, the PCF of the proposed multi-slot ChG/SiO<sub>2</sub> waveguide sensor is enhanced by five times, which has the potential for highly sensitive gas sensing.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A GaN-on-SiC Millimeter-Wave Low Noise Amplifier Using Hybrid-Matching Technique for 5G n258 Applications 针对 5G n258 应用、采用混合匹配技术的硅基氮化镓毫米波低噪声放大器
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-15 DOI: 10.1002/mop.70031
Liang Lan, Zhihao Zhang, Chaoyu Huang, Gary Zhang
{"title":"A GaN-on-SiC Millimeter-Wave Low Noise Amplifier Using Hybrid-Matching Technique for 5G n258 Applications","authors":"Liang Lan,&nbsp;Zhihao Zhang,&nbsp;Chaoyu Huang,&nbsp;Gary Zhang","doi":"10.1002/mop.70031","DOIUrl":"https://doi.org/10.1002/mop.70031","url":null,"abstract":"<div>\u0000 \u0000 <p>This letter details the design and implementation of a millimeter-wave (mm-Wave) low noise amplifier (LNA) employing 150-nm gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistor technology, specifically tailored for fifth-generation (5G) applications. The proposed GaN-based LNA integrates a hybrid matching topology alongside a co-design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Absorptive Bandpass Filters With General Chebyshev Response Based on λ/4 Microstrip Lines 基于 λ/4 微带线设计具有一般切比雪夫响应的吸收型带通滤波器
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-14 DOI: 10.1002/mop.70032
Zhang-Zhe Feng, Yi-Hao Ma, Qi Qiang Liu, Wen-Sheng Zhao
{"title":"Design of Absorptive Bandpass Filters With General Chebyshev Response Based on λ/4 Microstrip Lines","authors":"Zhang-Zhe Feng,&nbsp;Yi-Hao Ma,&nbsp;Qi Qiang Liu,&nbsp;Wen-Sheng Zhao","doi":"10.1002/mop.70032","DOIUrl":"https://doi.org/10.1002/mop.70032","url":null,"abstract":"<div>\u0000 \u0000 <p>In this brief, a synthesis design method is proposed for one-port absorptive bandpass filters (BPFs) with general Chebyshev response and transmission zeros. The method is based on coupling matrix theory, enabling the derivation of normalized coupling matrix coefficients based on user-defined parameters, including 3 dB bandwidth, in-band reflection coefficient, and out-of-band rejection. Moreover, it offers design equations for designing absorptive filters using transmission lines, coupling lines, and stubs, all with a length of one-quarter wavelength at the center frequency of the passband. To illustrate this method, a fourth-order absorptive BPF with a general Chebyshev response and two transmission zeros is designed, fabricated, and measured. The experimental results verify the effectiveness of the design method.</p>\u0000 </div>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correction to “Super-Wideband Two-Arm Antenna for Future Generations of Mobile Communications” 对 "用于未来移动通信的超宽带双臂天线 "的更正
IF 1 4区 工程技术
Microwave and Optical Technology Letters Pub Date : 2024-11-14 DOI: 10.1002/mop.34353
{"title":"Correction to “Super-Wideband Two-Arm Antenna for Future Generations of Mobile Communications”","authors":"","doi":"10.1002/mop.34353","DOIUrl":"https://doi.org/10.1002/mop.34353","url":null,"abstract":"<p>E. G. Ouf, M. Abo El-Hassan, A. E. Farahat, K. F. A. Hussein, and S. A. Mohassieb, “Super-Wideband Two-Arm Antenna for Future Generations of Mobile Communications,” <i>Microwave and Optical Technology Letters</i> 66, no. 1 (2024): e33764.</p><p>The current authors' names with affiliations that are incorrect are as follows:</p><p>Eman G. Ouf<sup>1</sup> | May Abo El-Hassan<sup>2</sup> | Asmaa E. Farahat<sup>2</sup> | Khalid F. A. Hussein<sup>2</sup> | Shaimaa A. Mohassieb<sup>3</sup></p><p>1 Department of Microstrip</p><p>2 Electronics Research Institute (ERI), Cairo, Egypt</p><p>3 Akhbar Elyom Academy, 6th October City, Egypt</p><p>Correction to:</p><p>Eman G. Ouf<sup>1</sup> | May Abo El-Hassan<sup>2</sup> | Asmaa E. Farahat<sup>2</sup> | Khalid F. A. Hussein<sup>2</sup> | Shaimaa A. Mohassieb<sup>3</sup></p><p>1 Department of Microstrip, Electronics Research Institute (ERI), Cairo, Egypt</p><p>2 Department of Microwave Engineering, Electronics Research Institute (ERI), Cairo, Egypt</p><p>3 Akhbar Elyom Academy, 6th October City, Egypt</p><p>We apologize for this error.</p>","PeriodicalId":18562,"journal":{"name":"Microwave and Optical Technology Letters","volume":"66 11","pages":""},"PeriodicalIF":1.0,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/mop.34353","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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