CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics最新文献

Subpicosecond carrier lifetime in beryllium-doped lnGaAsP grown by He-plasma-assisted molecular beam epitaxy he等离子体辅助分子束外延生长铍掺杂lnGaAsP的亚皮秒载流子寿命

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-09-15 DOI: 10.1063/1.119952

L. Qian, S. Benjamin, P. Smith, B. Robinson, D. A. Thompson

引用次数: 33

A single chip integrated optical E-field-sensor measuring two E-field- sensor components simultaneously 单片机集成了光场传感器，同时测量两个电磁场传感器组件

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603459

J. Berger, M. Schwerdt, K. Petermann, H. Fabling, P. Wust

引用次数: 1

Growth and properties of mid-lR nonlinear optical materials 中lr非线性光学材料的生长与性能

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603239

P. Schunemann

引用次数: 0

100 W cw Al-free 808 nm linear bar arrays 100w无铝连续波808nm线性棒阵列

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603475

F. Daiminger, S. Heinemann, J. Nappi, M. Toivonen, H. Asonen

引用次数: 5

Experimental measure of the timing jitter in dispersion-managed soliton transmission at 10 Gbit/s up to 20,000 km 色散管理孤子传输速率10gbit /s至20,000 km时脉抖动的实验测量

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603246

G. Carter, J. Jacob, E. Golovchenko, A.N. Pilipetskli, C. Menyuk

引用次数: 0

Dynamics of mode partitioning in vertical-cavity surface-emitting lasers 垂直腔面发射激光器模式分配动力学

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603124

C. Mignosi, L. Raddatz, P. Dowd, I. White, D. Cunningham, M. Tan, S. Wang

{"title":"Dynamics of mode partitioning in vertical-cavity surface-emitting lasers","authors":"C. Mignosi, L. Raddatz, P. Dowd, I. White, D. Cunningham, M. Tan, S. Wang","doi":"10.1109/CLEO.1997.603124","DOIUrl":"https://doi.org/10.1109/CLEO.1997.603124","url":null,"abstract":"reflectivity six period upper stack. The end of the GRIN lens above the VCSEL is antireflection coated, and the other has an apertured high reflector. When the GRIN lens is at the proper height from the VCSEL plane, it integrates the functions of a collimating lens, a circular aperture on axis, and an output coupler. The output powers from this composite GRIN setup were 80% higher than those obtained from the equivalent setup using discrete components, as a result of reduced losses. The six period upper stack does not provide sufficient reflectivity for the VCSEL to lase. The external cavity feedback into the VCSEL comes from the apertured external mirror on the GRIN lens resulting in a coupled cavity structure. The apertured mirror provides high feedback to the lowest-order modes, and discriminates against higher-order-mode lasing. Near field mode size measurements show two significant features. The first is that we are able to force an ordinarily multi-mode size device (10 pm) to lase in a relatively large (20 = 6 pm) single transverse mode (Fig. 2). The second feature is that over a portion of the L-I curve, the mode size increases, whereas in conventional VCSELs, mode size generally decreases with increasing current drive! We also observed that the output is spectrally single 5. The measured etendue (solid angle divergence times near-field mode area) of the out& put from the GRIN lens, at 4.0 mW operating power, was 7.9 X cm2str. The etendue of a a Gaussian (X') of the same wavelength is 7.2 X cm2str, which implies that the output from our cavityis about 91% as effective as a pure Gaussian in concentrating the output power into a given cone, with a resulting brightness of 5.1 X lo5 W/cm2str. A slope efficiency of greater than 1.4 mW/mA was observed, which, taking into account increasing mode size, corresponds to an internal quantum efficiency of 70%. We also saw threshold currents as low as 4.6 mA, and powers above 4 mW, using the largest patterned mirror (400 pm). The best results have","PeriodicalId":173652,"journal":{"name":"CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116650805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

High-resolution, whole-field, fluorescence lifetime imaging of fluorophore distribution and environment 荧光团分布和环境的高分辨率、全场、荧光寿命成像

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603179

K. Dowling, S. Hyde, N. Barry, J. Dainty, P. French, A. J. Hughes, M. Lever, A. Dymoke-Bradshaw, J. Hares, P. Kellett

引用次数: 0

The Development Of Quasi-phase-matched Optical Parametric Oscillators Based On PPLN 基于PPLN的准相位匹配光参量振荡器的研制

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.602173

L. Myers, W. Rosenberg

引用次数: 1

Fabrication of microlenses in bulk chalcogenide glasses 块状硫系玻璃微透镜的制备

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.602427

G. Beadie, W. Rabinovich, J. Sanghera, I. Aggarwal

{"title":"Fabrication of microlenses in bulk chalcogenide glasses","authors":"G. Beadie, W. Rabinovich, J. Sanghera, I. Aggarwal","doi":"10.1109/CLEO.1997.602427","DOIUrl":"https://doi.org/10.1109/CLEO.1997.602427","url":null,"abstract":"width is varied from 33 ns to 62 ns while maintaining constant energy per pulse. Without aperturing, the laser beam size before entering the focusing lens is 10 mm. A mechanical aperture is used to shrink the unfocused laser beam size, and values of 7.5 mm to 6.5 mm were chosen. These three beam sizes correspond to a minimum laser focus spot size of 7.46, 9.94, and 11.47 p m respectively. The bump shape is measured by an interferometric optical surface profiler and results are summarized in Fig. 3. It can be seen that at 1.11 pj/pulse with an unapertured 10 mm beam, the laser power is close to the threshold of bump formation and changes in the pulse duration do not greatly affect the bump height. At laser powers that generate bump heights around 22 nm, bump height (BH) and bump depth (BV) increase while the bump size (BD) decreases as a function of laser pulse duration. Aperturing ofthe laser beam changes the beam size, which only affects BD. In other words, beam clipping has the same effect as changing the beam diameter by the use of a beam expander. As the bump size increase to 12 p m by beam clipping, a sharp BV decrease is observed. This is the region where the laser bump shape starts changing from a crater to a Sombrero. Sombrero bump formation has been explained by the interaction of the thermocapillary effect and the chemicapillary effects.' Figure 4 shows the 3-D profile of a crater bump formed by laser texture.","PeriodicalId":173652,"journal":{"name":"CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117277499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of electric field profile on gain-bandwidth product of lnGaAs/Si avalanche photodetectors 电场分布对lnGaAs/Si雪崩光电探测器增益带宽积的影响

CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics Pub Date : 1997-05-18 DOI: 10.1109/CLEO.1997.603172

Weishu Wu, A. Hawkins, J. Bowers

{"title":"Effect of electric field profile on gain-bandwidth product of lnGaAs/Si avalanche photodetectors","authors":"Weishu Wu, A. Hawkins, J. Bowers","doi":"10.1109/CLEO.1997.603172","DOIUrl":"https://doi.org/10.1109/CLEO.1997.603172","url":null,"abstract":"calculation is large enough to distinguish the signal pulses in the spectral regime. To confirm the principle of operation, we performed an experiment with a GaAs waveguide as the nonlinear waveguide and a monochromator as the filter (Fig. 2). In this experiment, an unmodulated cw signal light, instead of pulses, at wavelengths around 925 nm, and 650 fs, 12 pJ control pulses at 883 nm were coupled to the nonlinear waveguide. The time evolution of the signal light from the monochromator was measured by a crosscorrelation technique. The center and the full width at half maximum (FWHM) of the transmission window of the monochromator were fixed at 925.5 nm and 1.5 nm, respectively. To observe the signal light wavelength shift, crosscorrelation traces for different signal light wavelengths were compared. Figure 3 shows the obtained cross-correlation traces with signal light wavelengths of 925.5 and 926.8 nm. The cw signal light at 925.5 nm is normally transmitted by the monochromator. In this case, only when the refractive index change and thus the signal light frequency shift are induced by the control pulse, a drop in the signal light intensity is observed. On the other hand, the cw signal light at 926.8 nm is normally off. The signal light is detected only when the control pulse induces the blue-shift of the signal light and the wavelength moves to the transmission window of the monochromator. The observed switching time is less than 2 ps, showing ultrafast capability. In conclusion, we proposed a novel alloptical gate switch. This all-optical switch is very simple in structure, yet is capable of ultrahigh-speed and high-efficiency switching. We verified its principle of operation by demonstrating ultrafast switching of faster than 2 ps. We also note that high repetition operation unrestricted by the slow relaxation of the band filling effect can be also expected in the present Effect of electric field profile on gainbandwidth product of InGaAs/Si avalanche photodetectors","PeriodicalId":173652,"journal":{"name":"CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127333624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0