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Efficient Partially-parallel NTT Processor for Lattice-based Post-quantum Cryptography 基于点阵后量子密码的高效部分并行NTT处理器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.459
Soyeon Choi, Yerin Shin, Kiho Lim, Hoyoung Yoo
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引用次数: 0
Enhanced Current-voltage Nonlinearity by Controlling Oxygen Concentration of TiOx Buffer Layer for RRAM Passive Crossbar Array 通过控制RRAM无源横杆阵列TiOx缓冲层氧浓度增强电流-电压非线性
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.417
Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Byung-Gook Park
{"title":"Enhanced Current-voltage Nonlinearity by Controlling Oxygen Concentration of TiOx Buffer Layer for RRAM Passive Crossbar Array","authors":"Tae-Hyeon Kim, Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Byung-Gook Park","doi":"10.5573/jsts.2022.22.6.417","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.417","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"4 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90291626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Small-signal Modeling of InP HBT based on PSO-ELM Neural Network 基于PSO-ELM神经网络的InP HBT小信号建模
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.407
Jin-can Zhang, Y. Fan, Min Liu, Jinchan Wang, Liwen Zhang
{"title":"Small-signal Modeling of InP HBT based on PSO-ELM Neural Network","authors":"Jin-can Zhang, Y. Fan, Min Liu, Jinchan Wang, Liwen Zhang","doi":"10.5573/jsts.2022.22.6.407","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.407","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"57 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84764190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Ka-band Power Amplifier with On-chip Power Detector in 0.15 μm GaAs pHEMT Technology 基于0.15 μm GaAs pHEMT技术的片上功率检测器ka波段功率放大器
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.493
Sanghoon Sim, L. Jeon
{"title":"A Ka-band Power Amplifier with On-chip Power Detector in 0.15 μm GaAs pHEMT Technology","authors":"Sanghoon Sim, L. Jeon","doi":"10.5573/jsts.2022.22.6.493","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.493","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"74 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83398087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insight into the Charging and Relaxation Dynamics of Diffusive Memristors in Integration-and-fire Neuron Applications 扩散性忆阻器在集成与放电神经元中的充电与弛豫动力学研究
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.387
Ju-Hwan Park, W. Jeong, B. Choi
{"title":"Insight into the Charging and Relaxation Dynamics of Diffusive Memristors in Integration-and-fire Neuron Applications","authors":"Ju-Hwan Park, W. Jeong, B. Choi","doi":"10.5573/jsts.2022.22.6.387","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.387","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"144 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86637645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 28 Gb/s Receiver Front-end Capable of Receiving Wide Range Current Signal in 65 nm CMOS 一种能够接收宽范围电流信号的65nm CMOS的28gb /s接收器前端
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.475
Daehyun Koh, Daniel Jeong, Jeongho Hwang, D. Jeong
{"title":"A 28 Gb/s Receiver Front-end Capable of Receiving Wide Range Current Signal in 65 nm CMOS","authors":"Daehyun Koh, Daniel Jeong, Jeongho Hwang, D. Jeong","doi":"10.5573/jsts.2022.22.6.475","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.475","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"3 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86615210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Review of Noise Reduction Techniques in Noise-shaping SAR ADCs 噪声整形SAR adc降噪技术综述
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.436
Kiho Seong, Jae-Soub Han, Sung-Eun Kim, Yong Shim, K. Baek
{"title":"A Review of Noise Reduction Techniques in Noise-shaping SAR ADCs","authors":"Kiho Seong, Jae-Soub Han, Sung-Eun Kim, Yong Shim, K. Baek","doi":"10.5573/jsts.2022.22.6.436","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.436","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"77 5 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89553441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a Packaged Multi-radius Multi-path Solenoidal Inductor for Redistribution Layers 一种封装多半径多路径重分布层螺线管电感器的设计
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-12-31 DOI: 10.5573/jsts.2022.22.6.395
G. Kim, SoYoung Kim
{"title":"Design of a Packaged Multi-radius Multi-path Solenoidal Inductor for Redistribution Layers","authors":"G. Kim, SoYoung Kim","doi":"10.5573/jsts.2022.22.6.395","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.6.395","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"33 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75292250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review and Analysis of Variable Bit-precision MAC Microarchitectures for Energy-efficient AI Computation 面向节能AI计算的可变位精度MAC微架构综述与分析
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-10-31 DOI: 10.5573/jsts.2022.22.5.353
Sungju Ryu
{"title":"Review and Analysis of Variable Bit-precision MAC Microarchitectures for Energy-efficient AI Computation","authors":"Sungju Ryu","doi":"10.5573/jsts.2022.22.5.353","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.5.353","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"8 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78661059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of ZnO with Reduced Direct Bandgap using First-principles Calculation: Electronic, Band Structure, and Optical Properties 利用第一性原理计算减小直接带隙的ZnO的设计:电子、能带结构和光学性质
IF 0.4 4区 工程技术
Journal of Semiconductor Technology and Science Pub Date : 2022-10-31 DOI: 10.5573/jsts.2022.22.5.291
Rezhaw A. Qadr, Dlear R. Saber, S. B. Aziz
{"title":"Design of ZnO with Reduced Direct Bandgap using First-principles Calculation: Electronic, Band Structure, and Optical Properties","authors":"Rezhaw A. Qadr, Dlear R. Saber, S. B. Aziz","doi":"10.5573/jsts.2022.22.5.291","DOIUrl":"https://doi.org/10.5573/jsts.2022.22.5.291","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"1 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2022-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79479883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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