2016 IEEE International Conference on Semiconductor Electronics (ICSE)最新文献

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HIV-1 Tat peptide detection by using RNA aptamer on MWCNT modified electrode MWCNT修饰电极上RNA适体检测HIV-1 Tat肽
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573627
M. S. Radhi, A. R. Ruslinda, M. F. Fatin, S. S. B. Hashwan, M. Arshad, U. Hashim
{"title":"HIV-1 Tat peptide detection by using RNA aptamer on MWCNT modified electrode","authors":"M. S. Radhi, A. R. Ruslinda, M. F. Fatin, S. S. B. Hashwan, M. Arshad, U. Hashim","doi":"10.1109/SMELEC.2016.7573627","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573627","url":null,"abstract":"An electrode has been fabricated for detection of HIV-1 Tat protein. Functionalized carboxylated multiwalled carbon nanotube (COOH-MWCNT) has been deposited by spray technique on the electrode to act as amplification layer and immobilization site for aptamer. Aptamer has been proved that it is highly specific for the detection of its target molecule. In this paper, we demonstrated the immobilization of split aptamer on MWCNT-modified electrode by interaction of carboxyl functional group from MWCNT and amine functional group from aptamer. The implementation of split RNA aptamer as a recognition element is promising for detecting HIV-1 Tat peptide. Detection has been conducted in control sample and HIV-1 Tat protein sample. The intercalation of aptamer and protein has given changes to the electrical signal and quantified by picoammeter showing decrease in current value of 3.74nA compared to control which different only 1.64nA.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130910024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Finite element analysis on mechanical characteristic of nanoslit filtration membrane for artificial kidney 人工肾用纳米缝隙过滤膜力学特性的有限元分析
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573581
K. Mustafa, J. Yunas, A. A. Hamzah, B. Majlis
{"title":"Finite element analysis on mechanical characteristic of nanoslit filtration membrane for artificial kidney","authors":"K. Mustafa, J. Yunas, A. A. Hamzah, B. Majlis","doi":"10.1109/SMELEC.2016.7573581","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573581","url":null,"abstract":"FE analysis on mechanical characteristic of nanoslit membranes have been conducted. The study is aimed to investigate the feasibility of filtration membrane fabrication for an artificial kidney. The analysis is done using Comsol Multiphysics simulation on various slit geometry ranging from 6 to 40 nm width, and for 60 and 100 nm length on Si3N4 based filtration membrane having thickness ranging from 100 to 1000 nm in order to find optimum mechanical characteristic of the membrane. It is shown that the filtration membrane having thickness of above 400 nm has an appropriate mechanical strength to withstand applied pressure up to 55 mmHg. The larger the nanoslit size, the lower the deflection of the membrane due to stress imposed. The simulated result of the nanoslit filtration membrane can be used as a reference for the future fabrication of molecule selective filtration membrane for artificial kidney.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114275399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
FDTD numerical analysis of SPR sensing using graphene-based photonic crystal 石墨烯基光子晶体SPR传感的FDTD数值分析
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573595
K. A. Tarumaraja, P. Menon, F. A. Said, N. A. Jamil, A. Ehsan, S. Shaari, B. Majlis, A. Jalar
{"title":"FDTD numerical analysis of SPR sensing using graphene-based photonic crystal","authors":"K. A. Tarumaraja, P. Menon, F. A. Said, N. A. Jamil, A. Ehsan, S. Shaari, B. Majlis, A. Jalar","doi":"10.1109/SMELEC.2016.7573595","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573595","url":null,"abstract":"In this study, we investigated the surface plasmon resonance (SPR) sensing based on photonic crystal structures which are designed using a single graphene sheet and multilayer metal oxides (Al2O3 and ZnO) for detection sensitivity and the absorption of molecules through excitation wavelength when using air and water as analytes. The refractive index (η) of air is 1.0 and water is 1.33. The method used to investigate the design structure is by simulation using finite difference time domain (FDTD). The wavelength is fixed at 0.8μm (near-infrared region) to excite a transverse electric (TEM) surface plasmon polaritons using Kretschmann configuration. Both analytical and numerical SPR spectra were in a good agreement. When using air as analyte, the reflection of incident angle for Al2O3 and ZnO are 59.6° and 62°. While, the reflection of incident angle for Al2O3 and ZnO are 69.6° and 71.8° when using water as analyte. The change in the refractive index of the analytes gave a change in the incident angle hence graphene and metal oxides can be used to form a SPR-based biosensor for biomedical applications.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124216128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Surface morphology of reduced graphene oxide-carbon nanotubes hybrid film for bio-sensing applications 用于生物传感应用的还原氧化石墨烯-碳纳米管杂化膜的表面形貌
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573656
H. Koay, A. R. Ruslinda, S. S. B. Hashwan, M. F. Fatin, V. Thivina, V. Tony, M. K. Md Arshad, C. Voon, U. Hashim
{"title":"Surface morphology of reduced graphene oxide-carbon nanotubes hybrid film for bio-sensing applications","authors":"H. Koay, A. R. Ruslinda, S. S. B. Hashwan, M. F. Fatin, V. Thivina, V. Tony, M. K. Md Arshad, C. Voon, U. Hashim","doi":"10.1109/SMELEC.2016.7573656","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573656","url":null,"abstract":"Graphene is one of the carbon allotropes that possesses several outstanding properties which is suitable to be used in bio-sensing applications. Reduction of graphene oxide (GO) is the main concern of researchers in preparing better quality of graphene at a lower cost with mass production as the reduced GO partially restores the pristine graphene. The reduced graphene oxide (rGO) is then mixed with multi-walled carbon nanotubes (MWCNTs) to form the three-dimensional arrangement of rGO-CNTs hybrid nanocomposite which can overcome the limitations faced while using rGO or MWCNTs separately in bio-sensing applications. Here we demonstrate the sample preparation of rGO-CNTs hybrid film for biosensing applications. GO was prepared by modified Hummer's method and rGO was obtained by reducing GO with L-ascorbic acid. The characterizations of rGO-CNTs hybrid film were examined via Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Fourier Transform Infrared Spectroscopy (FTIR). The surface morphologies of GO, MWCNTs, GO-CNTs hybrid and rGO-CNTs hybrid films were observed via SEM. The thickness and the surface roughness of MWCNTs, GO, GO-CNTs hybrid and rGO-CNTs hybrid films were examined via AFM. FTIR was carried out to examine the carboxyl functional group in the rGO-CNTs hybrid film.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"2017 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129698743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Interdigitated electrode biosensor on graphene oxide-multiwalled carbon nanotubes for DNA detection 用于DNA检测的氧化石墨烯-多壁碳纳米管交叉电极生物传感器
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573655
S. S. B. Hashwan, A. R. Ruslinda, M. F. Fatin, M. K. Md Arshad, V. Thivina, V. Tony, C. Voon, R. M. Ayub, U. Hashim
{"title":"Interdigitated electrode biosensor on graphene oxide-multiwalled carbon nanotubes for DNA detection","authors":"S. S. B. Hashwan, A. R. Ruslinda, M. F. Fatin, M. K. Md Arshad, V. Thivina, V. Tony, C. Voon, R. M. Ayub, U. Hashim","doi":"10.1109/SMELEC.2016.7573655","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573655","url":null,"abstract":"interdigitated electrodes (IDEs) with GO-MWCNTs thin film as sensing membrane have been successfully developed on silicon substrate for DNA detection. The physical surface morphology of GO-MWCNTs were characterized using field emission scanning electron microscopy (FESEM) and the surface structural was determined by X-ray powder diffraction (XRD). The chemical bonding of GO-MWCNTs were examined by using Fourier transform infrared spectroscopy (FTIR). FTIR spectrum successfully shows that the GO-MWCNT hybrid thin film contained carboxyl functional groups by showing peaks at 3375cm -1 and 1690cm -1 for (O-H stretch), and (C=O stretch) respectively. The IDE biosensor was measured on DNA immobilization activities. The current of the IDE after the immobilization at 2V was drop from 0.9mA to 0.75mA. The difference of the current signal is due to the negatively charged backbones of the DNA probes repelled electrons from accumulating at the conducting channel. The IDE current was further decreased when the DNA hybridization took place.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129944958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of MOSFET subthreshold swing mismatch with BSIM4 Model 基于BSIM4模型的MOSFET亚阈值摆幅失配建模
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573597
Xing Er Bee, Mohamad Marzuki Bin Mohd Fauzi, P. Tan
{"title":"Modeling of MOSFET subthreshold swing mismatch with BSIM4 Model","authors":"Xing Er Bee, Mohamad Marzuki Bin Mohd Fauzi, P. Tan","doi":"10.1109/SMELEC.2016.7573597","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573597","url":null,"abstract":"In this paper, we propose a methodology to model the MOSFET subthreshold swing, S mismatch by using BSIM4 model. The 0.18μm CMOS technology silicon data show two trends in the swing mismatch plot. For large-size devices (larger than a critical area AC), the subthreshold swing behaves in a linear trend with smaller slope compared to small-size devices. A mathematical equation as a function of AC is added into the BSIM4 subthreshold swing parameter, nfactor to capture the subthreshold swing mismatch correctly. The mismatch models generated using the proposed methodology shows good agreement with the silicon data and has been tested compatible with HSPICE and SPECTRE simulators.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127843620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and fabrication of Interdigitated Electrode (IDE) for detection of Ganoderma boninense 用交叉指状电极(IDE)检测灵芝的设计与制备
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573588
V. Thivina, U. Hashim, M. Arshad, A. R. Ruslinda, A. Ayoib, N. Nordin
{"title":"Design and fabrication of Interdigitated Electrode (IDE) for detection of Ganoderma boninense","authors":"V. Thivina, U. Hashim, M. Arshad, A. R. Ruslinda, A. Ayoib, N. Nordin","doi":"10.1109/SMELEC.2016.7573588","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573588","url":null,"abstract":"As a present work, a capacitive electrochemical biosensor i.e. Interdigitated Elecrode (IDE) was successfully designed and fabricated with aluminium as its contact pad deposited on a semi-conductor (silicon) surface using a thermal evaporator. For the fabrication method, lift-off photolithography process is applied followed by morphological and electrical characterizations. Meanwhile, the design of the IDE mask was done by the aid of AutoCAD software with miniaturization for future work of Ganoderma boninense detection. The electrical performance of the microelectrode sensor proved to be remarkable and for further studies, surface modification need to be done for sensing of biomolecules especially the target DNA Ganoderma. This study has proven that with the simple process of photolithography, IDEs can be fabricated within few hours and with low cost.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116147463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Electrical characterization of surface modified IDE with Gold Nano particles 金纳米颗粒表面修饰IDE的电学特性
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573622
N. Nordin, U. Hashim, A. R. Ruslinda, A. Ayoib, V. Thivina
{"title":"Electrical characterization of surface modified IDE with Gold Nano particles","authors":"N. Nordin, U. Hashim, A. R. Ruslinda, A. Ayoib, V. Thivina","doi":"10.1109/SMELEC.2016.7573622","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573622","url":null,"abstract":"Interdigitated Electrode (IDE) is a sensor device that composed of the fingers of the electrode and two pads made up of high conductivity of the metal. IDE is prepared by simple photolithographic process that included transferred of the desired design pattern to the Silicon Oxide (SiO) substrate. 130nm nanogap of IDE is used for this experiment. This paper is conducted to compare the bare IDE without anything deposited on it and IDE with Gold Nanoparticles (GNP) on it. The result showed the difference by IDE deposited GNP slightly decreased with 1.76×10-11. The size of the nanogap also played an important role for sensitivity of the device. Thus, in the future, this device should have been made to detect any kind of biomolecules such as DNA, proteins or antibodies.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126039183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Accurate BSIM4 MOS model extraction with Binning-Hybrid-Macro methodology 基于Binning-Hybrid-Macro方法的BSIM4 MOS模型精确提取
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573598
Chiew Ching Tan, P. Tan
{"title":"Accurate BSIM4 MOS model extraction with Binning-Hybrid-Macro methodology","authors":"Chiew Ching Tan, P. Tan","doi":"10.1109/SMELEC.2016.7573598","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573598","url":null,"abstract":"An accurate BSIM4 parameter extraction with Binning-Hybrid-Macro (BHM) methodology has been developed for MOS transistor models. The basic idea of this method is to apply binning on a hybrid-macro model. The comparison between the BHM method and various model extraction methods is discussed. BHM method is more robust and easier to use besides its capability to produce more accurate roll-off fittings compared to other methods. The BHM extraction methodology has been demonstrated on actual silicon from 0.18μm CMOS technology. Accurate model fitting to the measured data has been achieved. The model extracted using BHM method has been tested and verified to be compatible with HSPICE and SPECTRE simulators.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133014569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FEM modeling and simulation of a layered SAW device based on ZnO/128° YX LiNbO3 基于ZnO/128°YX LiNbO3的层状SAW器件有限元建模与仿真
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI: 10.1109/SMELEC.2016.7573577
Z. T. Salim, Uda Hashim, M. Arshad
{"title":"FEM modeling and simulation of a layered SAW device based on ZnO/128° YX LiNbO3","authors":"Z. T. Salim, Uda Hashim, M. Arshad","doi":"10.1109/SMELEC.2016.7573577","DOIUrl":"https://doi.org/10.1109/SMELEC.2016.7573577","url":null,"abstract":"In this paper, the modeling and simulation of a layered surface acoustic wave device based on ZnO/128° YX LiNbO3 were conducted using Finite Element Method (FEM) in COMSOL Multiphysics 4.3b platform. The SAWs propagation characteristics were numerically investigated with variation in the ZnO layer thickness. The results show that the SAW device frequency response was varied with the ZnO layer thickness from 166.1 MHz to 150.4 MHz. The free and metalized phase velocities (νf and νm) were calculated and used to calculate the electromechanical coupling coefficient (K2) of the structure. The results show that a large coupling coefficient of 6.05% can be obtained in 500 nm ZnO layer thickness which is in a good agreement with the data published by Nakamura and Hanamoka.","PeriodicalId":169983,"journal":{"name":"2016 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132771518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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