Journal of Physics: Condensed Matter最新文献

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Manipulating Floquet-driven topological insulator with off-resonant elliptically polarized light in presence of hexagonal Fermi surface warping.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-11 DOI: 10.1088/1361-648X/ad98db
Neetu Agrawal
{"title":"Manipulating Floquet-driven topological insulator with off-resonant elliptically polarized light in presence of hexagonal Fermi surface warping.","authors":"Neetu Agrawal","doi":"10.1088/1361-648X/ad98db","DOIUrl":"10.1088/1361-648X/ad98db","url":null,"abstract":"<p><p>The irradiation of topological insulator surface with elliptically polarized light modifies the topological properties in a phase-dependent manner impacting the Floquet Chern number which is a crucial topological invariant associated with such driven systems. Employing Floquet theory in presence of hexagonal warping term in the Dirac fermion Hamiltonian under off-resonant conditions, we derive an effective Hamiltonian that highlights distinct features in the Floquet-Dirac surface states. Specifically, we identify a helicity and ellipticity-dependent mass term in the quasi-static Hamiltonian, breaking time reversal symmetry. This mass term changes sign with variations in the helicity and ellipticity of incident radiation, potentially driving the system into trivial or Floquet-Chern topological insulating phases. We calculate the Berry curvature associated with the bandstructure and the resulting anomalous Hall conductivity, finding a strong dependence on the ellipticity and amplitude of the radiation.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142755218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solution grown quantum dots for quantum science.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-11 DOI: 10.1088/1361-648X/ad9da5
Parna Roy, Parineeta Gogoi, Anshu Pandey
{"title":"Solution grown quantum dots for quantum science.","authors":"Parna Roy, Parineeta Gogoi, Anshu Pandey","doi":"10.1088/1361-648X/ad9da5","DOIUrl":"https://doi.org/10.1088/1361-648X/ad9da5","url":null,"abstract":"<p><p>Solution grown quantum dots are promising materials for photonic quantum science. These materials are strongly confined and further offer advantages in terms of customizability and scalability. In this review we describe the applications of these materials towards quantum science particularly as single photon emitters. We further compare the progress made towards realizing and functionalizing these materials with the current state of the art in epitaxially grown quantum dots. We particularly focus on charge injection to regulate electronic energy levels and optical emission, as well as effects of strain that are crucial for quantum information applications. This suggests several potential areas where the physical properties of these materials need to be better understood and controlled to fully realize their potential in quantum science. This article thus summarizes the state of the art in terms of solution grown quantum dot development for quantum science and also outlines key areas where progress is expected before these materials become as developed as their solid-state counterparts.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142813407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of band occupation on electron-phonon coupling in gold.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-11 DOI: 10.1088/1361-648X/ad9da7
Tobias Held, Sebastian T Weber, Baerbel Rethfeld
{"title":"Influence of band occupation on electron-phonon coupling in gold.","authors":"Tobias Held, Sebastian T Weber, Baerbel Rethfeld","doi":"10.1088/1361-648X/ad9da7","DOIUrl":"https://doi.org/10.1088/1361-648X/ad9da7","url":null,"abstract":"<p><p>Electron-phonon coupling is a fundamental process that governs the energy relaxation dynamics&#xD;of solids excited by ultrafast laser pulses. It has been found to strongly depend on the electron&#xD;temperature as well as on nonequilibrium effects. Recently, the effect of occupational nonequilibrium&#xD;in noble metals, which outlasts the fully kinetic stage, has come into increased focus. In this&#xD;study, we investigate the influence of nonequilibrium density distributions in gold on the electron-&#xD;phonon coupling. We find a large effect on the coupling parameter which describes the energy&#xD;exchange between electrons and phonons. Our results challenge the conventional view that electron&#xD;temperature alone is a sufficient predictor of electron-phonon coupling.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142813401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spin polarisation and non-isotropic effective mass in the conduction band of GdN.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-10 DOI: 10.1088/1361-648X/ad98dd
W F Holmes-Hewett, E X M Trewick, H J Trodahl, R G Buckley, B J Ruck
{"title":"Spin polarisation and non-isotropic effective mass in the conduction band of GdN.","authors":"W F Holmes-Hewett, E X M Trewick, H J Trodahl, R G Buckley, B J Ruck","doi":"10.1088/1361-648X/ad98dd","DOIUrl":"10.1088/1361-648X/ad98dd","url":null,"abstract":"<p><p>GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN. Such a property is valuable as it can affect device design, and can be measured experimentally to validate the existing computation results.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142755225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Sn2+doping to improve the charge transport and light-emitting properties of CsPbCl3perovskites.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-10 DOI: 10.1088/1361-648X/ad98dc
Deenbandhu Sharma, S K Sharma
{"title":"Influence of Sn<sup>2+</sup>doping to improve the charge transport and light-emitting properties of CsPbCl<sub>3</sub>perovskites.","authors":"Deenbandhu Sharma, S K Sharma","doi":"10.1088/1361-648X/ad98dc","DOIUrl":"10.1088/1361-648X/ad98dc","url":null,"abstract":"<p><p>Doping B-site with metal ions is an emerging strategy to reduce lead toxicity and enhance the optoelectronic performance of lead halide perovskites. Also, the concentration of metal dopants plays an important role in achieving the desired electrical and optical properties of these halide perovskites. This work presents a simple chemical approach to synthesize pure and Sn<sup>2+</sup>doped CsPbCl<sub>3</sub>perovskites at room temperature. The dopant concentration was varied from 1 to 9 mol%. The structural, morphological, optical, thermal, and electrical properties of prepared perovskites are studied in order to check the optimal doping concentration along with to know the improvement in the optoelectronic properties required for LEDs and photovoltaic cells. It was observed that CsPbCl<sub>3</sub>perovskites exhibit high photoluminescence intensity, blue/violet emission, and high charge carrier mobility (up to 56.3 cm<sup>2</sup>V s<sup>-1</sup>) with a reduction in bandgap (up to 2.865 eV) after Sn<sup>2+</sup>doping.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142755201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Engineering the band structure of type-II MoSe2/WSe2van der Waals heterostructure by electric field and twist angle: a first principles perspective. 通过电场和扭转角对 II 型 MoSe2/WSe2 范德瓦尔斯异质结构的能带结构进行工程化:第一原理视角。
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-09 DOI: 10.1088/1361-648X/ad9806
Fangqi Yu, Weihua Yang, Jun Kang, Rao Huang, Lei Li, Yuhua Wen
{"title":"Engineering the band structure of type-II MoSe<sub>2</sub>/WSe<sub>2</sub>van der Waals heterostructure by electric field and twist angle: a first principles perspective.","authors":"Fangqi Yu, Weihua Yang, Jun Kang, Rao Huang, Lei Li, Yuhua Wen","doi":"10.1088/1361-648X/ad9806","DOIUrl":"10.1088/1361-648X/ad9806","url":null,"abstract":"<p><p>Type-II heterostructures composed of transition-metal dichalcogenides have attracted enormous attention due to their facilitation in efficient electron-hole separation. In this work, we performed density-functional theory calculations to systematically investigate the atomic and electronic structures of MoSe<sub>2</sub>/WSe<sub>2</sub>van der Waals heterostructure. Its six high-symmetry configurations with different interlayer coupling under external electric field and twist angle were addressed. Our results reveal that all the configurations exhibit type-II band alignment and their band gaps can be effectively modulated by the electric field. Notably, the direct to indirect band gap transition only occurs in the configurations with strong interlayer coupling. Moreover, twist-induced symmetry breaking weakens the interlayer interactions, thus decreasing interlayer charge transfer. Owing to large interlayer distance and weak interlayer coupling, the band structure of the heterostructure remained unchanged for the twist angles ranging from 13.2° to 46.8°. These findings demonstrate the great potential of the MoSe<sub>2</sub>/WSe<sub>2</sub>heterostructure for applications in optoelectronic and nanoelectronic devices.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142739795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Generalized representative structures for atomistic systems. 原子系统的广义代表结构
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-09 DOI: 10.1088/1361-648X/ad9791
James M Goff, Coreen Mullen, Shizhong Yang, Oleg N Starovoytov, Mitchell A Wood
{"title":"Generalized representative structures for atomistic systems.","authors":"James M Goff, Coreen Mullen, Shizhong Yang, Oleg N Starovoytov, Mitchell A Wood","doi":"10.1088/1361-648X/ad9791","DOIUrl":"10.1088/1361-648X/ad9791","url":null,"abstract":"<p><p>A new method is presented to generate atomic structures that reproduce the essential characteristics of arbitrary material systems, phases, or ensembles. Previous methods allow one to reproduce the essential characteristics (e.g. the chemical disorder) of a large random alloy within a small crystal structure. The ability to generate small representations of random alloys, along with the restriction to crystal systems, results from using the fixed-lattice cluster correlations to describe structural characteristics. A more general description of the structural characteristics of atomic systems is obtained using complete sets of atomic environment descriptors. These are used within for generating representative atomic structures without restriction to fixed lattices. A general data-driven approach is provided here utilizing the atomic cluster expansion (ACE) basis. The<i>N</i>-body ACE descriptors are a complete set of atomic environment descriptors that span both chemical and spatial degrees of freedom and are used within for describing atomic structures. The generalized representative structure (GRS) method presented within generates small atomic structures that reproduce ACE descriptor distributions corresponding to arbitrary structural and chemical complexity. It is shown that systematically improvable representations of crystalline systems on fixed parent lattices, amorphous materials, liquids, and ensembles of atomic structures may be produced efficiently through optimization algorithms. With the GRS method, we highlight reduced representations of atomistic machine-learning training datasets that contain similar amounts of information and small 40-72 atom representations of liquid phases. The ability to use GRS methodology as a driver for informed novel structure generation is also demonstrated. The advantages over other data-driven methods and state-of-the-art methods restricted to high-symmetry systems are highlighted.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142729206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lattice reconstruction in twisted bilayer graphene.
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-06 DOI: 10.1088/1361-648X/ad987d
Zhongqiu Fu, Xiaofeng Zhou, Lin He
{"title":"Lattice reconstruction in twisted bilayer graphene.","authors":"Zhongqiu Fu, Xiaofeng Zhou, Lin He","doi":"10.1088/1361-648X/ad987d","DOIUrl":"10.1088/1361-648X/ad987d","url":null,"abstract":"<p><p>Twisted bilayer graphene (TBG) provides a tunable platform to study emergent properties that are absent in single-layer graphene by the van der Waals (vdW) interlayer interaction. The vdW interlayer interaction can also lead to notable lattice reconstruction at the interface, promoting interlayer commensurability while minimizing intralayer lattice distortion. The lattice reconstruction in TBG is a pivotal phenomenon that significantly influences the optical and electronic properties. Currently, the study of lattice reconstruction in TBG attracts much attention in condensed matter physics. In this article, we review the experimental advances in the field of TBG lattice reconstruction. The formation and atomic-scale characterization within reconstructed TBG are overviewed comprehensively. In addition, lattice reconstruction-induced electronic modulations are introduced. Moreover, coexistence and transition between reconstructed and unreconstructed phases within a critical transition regime are described. Furthermore, we discuss the prospects of tunable reconstruction within TBG and other 2D material heterostructures.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142750412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Fock-space landscape of many-body localisation. 多体定位的福克空间景观。
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-06 DOI: 10.1088/1361-648X/ad94c3
Sthitadhi Roy, David E Logan
{"title":"The Fock-space landscape of many-body localisation.","authors":"Sthitadhi Roy, David E Logan","doi":"10.1088/1361-648X/ad94c3","DOIUrl":"10.1088/1361-648X/ad94c3","url":null,"abstract":"<p><p>This article reviews recent progress in understanding the physics of many-body localisation (MBL) in disordered and interacting quantum many-body systems, from the perspective of ergodicity breaking on the associated Fock space. This approach to MBL is underpinned by mapping the dynamics of the many-body system onto that of a fictitious single particle on the high-dimensional, correlated and disordered Fock-space graph; yet, as we elaborate, the problem is fundamentally different from that of conventional Anderson localisation on high-dimensional or hierarchical graphs. We discuss in detail the nature of eigenstate correlations on the Fock space, both static and dynamic, and in the ergodic and many-body localised phases as well as in the vicinity of the MBL transition. The latter in turn sheds light on the nature of the transition, and motivates a scaling theory for it in terms of Fock-space based quantities. We also illustrate how these quantities can be concretely connected to real-space observables. An overview is given of several analytical and numerical techniques which have proven important in developing a comprehensive picture. Finally, we comment on some open questions in the field of MBL where the Fock-space approach is likely to prove insightful.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142682057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Introduction to machine learning potentials for atomistic simulations. 原子模拟的机器学习潜力介绍。
IF 2.3 4区 物理与天体物理
Journal of Physics: Condensed Matter Pub Date : 2024-12-06 DOI: 10.1088/1361-648X/ad9657
Fabian L Thiemann, Niamh O'Neill, Venkat Kapil, Angelos Michaelides, Christoph Schran
{"title":"Introduction to machine learning potentials for atomistic simulations.","authors":"Fabian L Thiemann, Niamh O'Neill, Venkat Kapil, Angelos Michaelides, Christoph Schran","doi":"10.1088/1361-648X/ad9657","DOIUrl":"10.1088/1361-648X/ad9657","url":null,"abstract":"<p><p>Machine learning potentials have revolutionised the field of atomistic simulations in recent years and are becoming a mainstay in the toolbox of computational scientists. This paper aims to provide an overview and introduction into machine learning potentials and their practical application to scientific problems. We provide a systematic guide for developing machine learning potentials, reviewing chemical descriptors, regression models, data generation and validation approaches. We begin with an emphasis on the earlier generation of models, such as high-dimensional neural network potentials and Gaussian approximation potentials, to provide historical perspective and guide the reader towards the understanding of recent developments, which are discussed in detail thereafter. Furthermore, we refer to relevant expert reviews, open-source software, and practical examples-further lowering the barrier to exploring these methods. The paper ends with selected showcase examples, highlighting the capabilities of machine learning potentials and how they can be applied to push the boundaries in atomistic simulations.</p>","PeriodicalId":16776,"journal":{"name":"Journal of Physics: Condensed Matter","volume":" ","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142693191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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