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2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

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SiRF 2021 Cover Page SiRF 2021封面
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/sirf51851.2021.9383393
{"title":"SiRF 2021 Cover Page","authors":"","doi":"10.1109/sirf51851.2021.9383393","DOIUrl":"https://doi.org/10.1109/sirf51851.2021.9383393","url":null,"abstract":"","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122918345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology 14nm射频FinFET技术中热噪声γ因子的实验提取
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383331
Xuewei Ding, G. Niu, Anni Zhang, W. Cai, K. Imura
{"title":"Experimental Extraction of Thermal Noise γ Factors in a 14-nm RF FinFET technology","authors":"Xuewei Ding, G. Niu, Anni Zhang, W. Cai, K. Imura","doi":"10.1109/SiRF51851.2021.9383331","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383331","url":null,"abstract":"This paper experimentally extracts the extrinsic and intrinsic thermal noise γ factors in a 14-nm FinFET technology. The intrinsic γ in saturation operation is found to be close to 1 for the minimum L (16nm) transistors, which is surprisingly low compared to the long channel limit of 2/3. We attribute this low noise factor to the excellent gate control of these FinFETs that makes the transistor exhibit relatively long channel thermal noise behavior at minimum gate length.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123598559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MMIC GaAs X-Band Isolator with Enhanced Power Transmission Response 增强功率传输响应的MMIC GaAs x波段隔离器
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383408
Andrea Ashley, G. Lasser, Z. Popovic, A. Madanayake, D. Psychogiou
{"title":"MMIC GaAs X-Band Isolator with Enhanced Power Transmission Response","authors":"Andrea Ashley, G. Lasser, Z. Popovic, A. Madanayake, D. Psychogiou","doi":"10.1109/SiRF51851.2021.9383408","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383408","url":null,"abstract":"This paper discusses the RF design and characterization of an X-band MMIC isolator. It is based on a directional coupler and a non-reciprocal RF signal path that comprises a gain stage and two transmission line elements for phase control. In this manner, enhanced power transmission is obtained in the forward direction and isolation in the reverse one. The operating principles and RF design trade-offs (isolation, gain, matching) of the isolator are presented through circuit-based analysis. For proof-of-concept demonstration purposes, a prototype was designed at X-band and manufactured with a commercial MMIC GaAs process. Its RF measured performance is summarized as follows: center frequency: 9.4 GHz, maximum gain = 9.3 dB, maximum isolation = 27.7 dB, and 3 dB passband bandwidth with > 23 dB of isolation= 1.61 GHz.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"476 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116688493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-Power 60GHz Receiver with an Integrated Analog Baseband for FMCW Radar Applications in 28nm CMOS Technology 基于28nm CMOS技术的FMCW雷达低功耗60GHz集成模拟基带接收机
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383346
R. Ciocoveanu, V. Issakov
{"title":"Low-Power 60GHz Receiver with an Integrated Analog Baseband for FMCW Radar Applications in 28nm CMOS Technology","authors":"R. Ciocoveanu, V. Issakov","doi":"10.1109/SiRF51851.2021.9383346","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383346","url":null,"abstract":"This paper presents a highly-integrated low-power 57 − 64 GHz receiver realized in a 28 nm bulk CMOS technology. The receiver chip integrates RF front-end and analog baseband (ABB), designed specifically for short-range frequency-modulated continuous wave (FMCW) radar systems. The RF front-end includes an LNA, a passive mixer and a transimpedance amplifier (TIA), while the analog signal processing chain consists of an active high-pass-filter (HPF), programmable gain amplifier (PGA) and 4th order anti-aliasing filter (AAF). To enhance the temperature stability, constant gm biasing is implemented. Furthermore, DTMOS technique is used to make biasing more robust against PVT variations. The receiver achieves peak conversion gain of 77 dB and overall noise figure of 13 dB, with the ABB contribution. The chip including pads occupies an area of only 700 μm × 625 μm. The circuit is operated from a single 0.9 V supply and draws 44 mA for the RF front-end and 2.2 mA for the ABB chain, resulting in 42 mW.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114478132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiRF 2021 Committees SiRF 2021委员会
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/sirf51851.2021.9383245
{"title":"SiRF 2021 Committees","authors":"","doi":"10.1109/sirf51851.2021.9383245","DOIUrl":"https://doi.org/10.1109/sirf51851.2021.9383245","url":null,"abstract":"","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116608577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Monolithic-Integrated Broadband Low-Noise Optical Receiver with Automatic Gain Control in 0.25μm SiGe BiCMOS 0.25μm SiGe BiCMOS的自动增益控制单片集成宽带低噪声光接收机
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383400
G. Dziallas, A. Fatemi, A. Malignaggi, G. Kahmen
{"title":"A Monolithic-Integrated Broadband Low-Noise Optical Receiver with Automatic Gain Control in 0.25μm SiGe BiCMOS","authors":"G. Dziallas, A. Fatemi, A. Malignaggi, G. Kahmen","doi":"10.1109/SiRF51851.2021.9383400","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383400","url":null,"abstract":"In this paper we present a broadband low-noise monolithic-integrated silicon photonic receiver with automatic gain control that shows state-of-the-art performance. The electronic and photonic components are fabricated monolithically on one chip using IHP’s 0.25μm SiGe BiCMOS EPIC technology. The optical receiver features a high tunable transimpedance gain of 66 dBW at a large opto-electrical BW of 34 GHz and an input-referred noise current of 2.81 μArms while consuming 205 mW of power. Comparing key performance metrics and the functional complexity of similar devices found in the literature, the optical receiver presented in this work achieves an overall superior performance.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133532916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Compact Monostatic Transceiver Topology Using a Diode-Based Mixer 使用二极管混频器的紧凑单静态收发器拓扑
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383332
Badou Sene, H. Knapp, Daniel Reiter, N. Pohl
{"title":"A Compact Monostatic Transceiver Topology Using a Diode-Based Mixer","authors":"Badou Sene, H. Knapp, Daniel Reiter, N. Pohl","doi":"10.1109/SiRF51851.2021.9383332","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383332","url":null,"abstract":"A novel monostatic transceiver topology that makes use of a diode-based mixer and operates from 143.8 to 158.1 GHz is proposed. The architecture avoids using couplers and the associated limitations. Hence, it allows to save space and minimizes losses. The signal travels directly from the VCO to the antenna through a diode-connected npn transistor, which performs the mixing. For the transmitted signal, solely a small insertion loss of less than 1.8 dB occurs. The complete mixer circuit only consumes an area of 65 x 260 µm2. Furthermore, the transceiver concept significantly improves the signal-to-noise ratio.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116515242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology 基于SiGe BiCMOS技术的314-344 GHz驱动级倍频器和1dbm Psat
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383328
Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel
{"title":"A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology","authors":"Sascha Breun, Albert-Marcel Schrotz, M. Dietz, V. Issakov, R. Weigel","doi":"10.1109/SiRF51851.2021.9383328","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383328","url":null,"abstract":"This paper presents a 314-344 GHz high output power push-push frequency doubler for radar applications with 1 dBm Psat at 324 GHz and 30 GHz Psat 3 dB–bandwidth. It is driven by a three-stage, cascode-based D-band driving stage, providing a differential saturated output power of 14.3 dBm at 154 GHz with a peak PAE of 4.5% and 13.4 dBm output referred P1 dB. The chip is fabricated using a 130 nm SiGe BiCMOS technology with ft/fmax of 250 GHz / 370 GHz. Thanks to the use of harmonic reflectors an overall peak conversion gain of 20 dB is achieved and remains above 6 dB at saturation.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130316788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SiRF 2021 Author Index sirf2021作者索引
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/sirf51851.2021.9383375
{"title":"SiRF 2021 Author Index","authors":"","doi":"10.1109/sirf51851.2021.9383375","DOIUrl":"https://doi.org/10.1109/sirf51851.2021.9383375","url":null,"abstract":"","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115908091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator 带相位补偿可变衰减器的60ghz可变增益放大器
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2021-01-17 DOI: 10.1109/SiRF51851.2021.9383343
G. Park, Jae Kwang Kwon, D. Kang, C. Park
{"title":"A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator","authors":"G. Park, Jae Kwang Kwon, D. Kang, C. Park","doi":"10.1109/SiRF51851.2021.9383343","DOIUrl":"https://doi.org/10.1109/SiRF51851.2021.9383343","url":null,"abstract":"A 60-GHz variable-gain amplifier with a phase-compensated variable attenuator is proposed herein. The proposed circuit comprises a four-stage common-source amplifier and a phase-compensated attenuator. The proposed circuit is implemented using a 65-nm CMOS process and occupies 360 μm × 765 μm including pads. The measured peak gain is 15.2 dB, and the 3-dB bandwidth exceeds 17.5 GHz from 49.5 to over 67 GHz. In addition, the proposed circuit achieves a gain control range exceeding 14.7 dB within a 3-dB bandwidth. Owing to the proposed phase compensation technique, the phase-compensated attenuator exhibits a maximum phase error of 2.9° and a RMS phase error of 1.7° at 56 GHz while consuming only 11.8 mW of DC power.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115276092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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