Journal of Nano-and electronic Physics最新文献_第8页

Premature Breakdown Identification in Photovoltaic Array Fed IGBT-based Voltage Source Converter 基于igbt的光伏阵列电压源变换器过早击穿识别

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(3).03016

Subhrasankha Ghosh, S. Mukherjee, S. Chattopadhyay, A. Das

{"title":"Premature Breakdown Identification in Photovoltaic Array Fed IGBT-based Voltage Source Converter","authors":"Subhrasankha Ghosh, S. Mukherjee, S. Chattopadhyay, A. Das","doi":"10.21272/jnep.15(3).03016","DOIUrl":"https://doi.org/10.21272/jnep.15(3).03016","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) is a work element in modern power electronics converters. The ability of the IGBT transistor, which is utilised in power converter circuits, to block high voltages, is one of its most crucial features. Large-scale solar power generations are incorporated into the AC grid via voltage-source converters (VSC). Many other applications also utilise voltage-source converters (VSCs). IGBTs are an integral part of voltage-source converters. Fault in IGBT-based VSCs has an impact on the functionality of all VSC-based systems. So, the fault-proof operation of IGBT is highly desirable. This article presents a methodology to detect the premature IGBT breakdown fault (PIBDF) in a photovoltaic (PV)-grid-connected three-phase three-level Voltage Source Converter (VSC). The work has been done using an analysis that is based on the Fast Fourier Transform (FFT) technique applied to the output phase voltage of VSC. Then for different fault percentage values, the effects on the DC as well as the fundamental frequency component and harmonic distortions have been investigated. Some specific features of the subharmonic components have been studied under the normal and faulty conditions of the IGBT. Further study shows that there are few features suitable for fault identification.","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68046165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of the Electronic and Optical Properties of Nanostructured Glasses and Composites 纳米结构玻璃及其复合材料的电子光学性质研究

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(4).04005

P. William, M. A. Jawale, A. B. Pawar, Sachin K. Korde, Dhananjay S. Rakshe, Neeta Deshpande

引用次数: 2

Modeling the Destruction of the p-n Junction by Electromagnetic Pulses 电磁脉冲对pn结破坏的模拟

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(4).04033

D. Sergeyev, K. Shunkeyev, N. Zhanturina, A. L. Solovjov

{"title":"Modeling the Destruction of the p-n Junction by Electromagnetic Pulses","authors":"D. Sergeyev, K. Shunkeyev, N. Zhanturina, A. L. Solovjov","doi":"10.21272/jnep.15(4).04033","DOIUrl":"https://doi.org/10.21272/jnep.15(4).04033","url":null,"abstract":"Within the framework of the density functional theory and methods of molecular dynamics, the process of destruction of a silicon p-n junction at the influence of an electromagnetic pulse (thermal effect) is considered. With an increase in the amplitude of the electromagnetic pulse, a nonlinearity of the mobility of quasiparticles arises and impact ionization processes occur, leading to the formation of various defects in the crystal lattice of the semiconductor. The evolution of the occurrence of point defects in a semiconductor by thermal deformation, as well as a further increase in their concentration, is shown. It is demonstrated that the primary passage of an electromagnetic pulse generates defects in a defect-free crystal. Further thermal impact of the pulse leads to an increase in the deviation of atoms, leading to the accumulation of defects and the destruction of the structure. With an increase in temperature, the p-n junction loses its rectifying properties and an instantaneous increase in the magnitude of the reverse current is observed due to the occurrence of an ionization current, which coincides in direction with the saturation current. It is revealed that thermal deformation significantly distorts the p-n junction profile. It was found that the destruction of the semiconductor structure occurs in the defect-free part of the crystal, and the defects stimulate destruction. In semiconductors doped with Li or Sr, the destruction time of the p-n junction increases due to the occupation of mobile Li or Sr ions by the formed silicon vacancies during the thermal action of the pulse. The results obtained can be useful in the development of semiconductor structures resistant to external influences of an electromagnetic pulse.","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135699110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen Treatment of Surface Layer of a Gold Film on Glass 玻璃上金膜表层的氢处理

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(2).02013

A. Vasiljev, T. Vasyliev, R. Zhelezniak, V. Kryvytskyi, T. Р. Doroshenko

引用次数: 0

Computational Study of the Photovoltaic Performance of CdS/Si Solar Cells: Anti-reflective Layers Effect CdS/Si太阳能电池光电性能的计算研究:抗反射层效应

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(2).02016

O. Boultif, B. Zaidi, S. Roguai, A. Mehdaoui, F. Diab, T. Bouarroudj, K. Kamli, Z. Hadef, C. Shekhar

引用次数: 0

Modeling and Optimization of CMOS Compatible Various ZnO/SiO2/Si Multilayer Structure for SAW Devices Using FEM 基于FEM的SAW器件CMOS兼容多种ZnO/SiO2/Si多层结构建模与优化

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(1).01024

P. R. Bagade, A. Pawar, R. K. Kamat, S. A. Shinde

引用次数: 0

A Compact Multi-resonant Wide Band MIMO Antenna for 5G Communication Systems at mm-wave Band 面向5G通信系统的毫米波频段紧凑型多谐振宽带MIMO天线

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(1).01026

E. Tarik, Najiba El Amrani El Idrissi, D. Kumutha, S. Jeevitha, Sudipta Das

引用次数: 0

Organic Field Effect Transistor Based on Adaptive Neuro-Fuzzy Inference System 基于自适应神经模糊推理系统的有机场效应晶体管

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(2).02001

Imad Benacer, Fateh Moulahcene, Fateh Bouguerra, Ammar Merazga

引用次数: 0

The Improved Performance with Reduction in Toxicity in CIGS Solar Cell Using Ultra-thin BaSi2 BSF Layer 超薄BaSi2 BSF层对CIGS太阳能电池性能的改善和毒性的降低

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(2).02025

Km. Kanchan, A. Sahu, S. Yadav

引用次数: 0

Performance Analysis of Charge-plasma Based Doping less Nanowire Field Effect Transistor 基于电荷等离子体的无掺杂纳米线场效应晶体管性能分析

Journal of Nano-and electronic Physics Pub Date : 2023-01-01 DOI: 10.21272/jnep.15(3).03031

P. Raja, P. Chander, B. Faisal, V. Prakash

{"title":"Performance Analysis of Charge-plasma Based Doping less Nanowire Field Effect Transistor","authors":"P. Raja, P. Chander, B. Faisal, V. Prakash","doi":"10.21272/jnep.15(3).03031","DOIUrl":"https://doi.org/10.21272/jnep.15(3).03031","url":null,"abstract":"The proposed work focuses on the outcomes brought about by the inclusion of Charge Plasma (CP) concept in a cylindrical Nanowire Field Effect Transistor (NWFET) for sub 10 nm. The Gate is surrounded by an oxide layer, which is further surrounded by a channel layer. The concept of charge-plasma is introduced in the channel by surrounding an oxide layer around the channel, and a different work functions metal layer around the oxide. The performance of device parameters like the electric potential and transfer characteristics have been described. Analysis of Threshold Voltage, drain current and I ON / I OFF ratio have been carried for 35 nm and 10 nm channel length. Sentaurus Technology Computer Aided Design (TCAD) has been used to evaluate and analyze this device for sub 10 nm. To calculate tunneling and recombination, the TCAD simulates the Lombardi mobility model, Shockley-Read-Hall (SRH), Density Gradient model, and Auger recombination models. This device generates twice times more output current by using the CP-based NWFET as compared to the conventional NWFET. The parasitic leakage has been reduced and the I ON /I OFF ratio has been stabilized. Also, the scalability is enhanced, and the Schottky junction's high vertical field lowers the lateral coupling between the source and drain field lines. This can be used to implement in memory devices such as Inverter, 6T SRAM","PeriodicalId":16654,"journal":{"name":"Journal of Nano-and electronic Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"68046365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0