Journal of Nanoelectronics and Optoelectronics最新文献

{"title":"Synthesis and Enhanced Optical Characterization of Zirconium-Doped NiO Thin Films","authors":"Ahmad Umar, Ahmed A. Ibrahim, Rani Rosaline, N. E. Sneha, Albatoul Mohammed Margan, Fares Almarqan, M. Varsha, Stephen Rajkumar Inbanathan, S. Ansari","doi":"10.1166/jno.2024.3624","DOIUrl":"https://doi.org/10.1166/jno.2024.3624","url":null,"abstract":"This study explores the formation and examination of Zr-doped NiO thin films (ZNO). The NiO powders mixed with Zr were made using the chemical precipitation method, and then these powders were shaped into thin films using a technique called the doctor blade method. We used several methods\u0000 to characterize the materials, including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and ultraviolet spectroscopy. The XRD analysis showed that the films were pure, only displaying the expected peaks for NiO in its common crystal form and no\u0000 signs of contamination. The AFM results indicated that the surface of these films was quite rough. Moreover, the optical studies revealed that adding Zr improved how NiO interacts with light at longer wavelengths, and these Zr-doped films had a lower energy gap (2.88 eV) than usual, which\u0000 could be beneficial for certain applications.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141699095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effective Stress Detection and Classification System Using African Buffalo Optimization and Recalling-Enhanced Recurrent Neural Network for Nano-Electronic Typed Data","authors":"Reyazur Rashid Irshad, H. Abosaq, Mohammed Al Yami, Mohammed Hamdi, Eman Abdelkreem Hassan, Md. Ashraf Siddiqui, Sangita Babu, Mohammed Ashique Rasool, Mohammed Mehdi Badr, Sultan Saleh Saeed Balobaid","doi":"10.1166/jno.2024.3623","DOIUrl":"https://doi.org/10.1166/jno.2024.3623","url":null,"abstract":"A body’s altered emotional reactions to a variety of conditions, including despair, anxiety, rage, grief, guilt, low self-worth, etc., can lead to stress. Stress hurts a person’s performance and is the underlying cause of many mental health issues, including dementia and\u0000 depression. Numerous prevailing approaches to stress detection are exploited with deep learning, but it needs to categorize the stress precisely, and it takes high computation time. To engulf these complications, an African buffalo optimization and the Recalling-Enhanced Recurrent Neural Network\u0000 (RE-RNN) are newly proposed for accurately detecting stress. At first, the stress dataset is collected from the Kaggle website, which actually hold the records for the data generated using the nanoelectronic and optoelectronic devices. Afterward, the preprocessing method eliminates noise and\u0000 improves input data by utilizing adaptive filter method. Next, the preprocessing output is fed to the Feature extraction section. The features are extracted based on discrete wavelet Transform (DWT). After that, the extracted data are updated to the classification process using a Recalling-Enhanced\u0000 Recurrent Neural Network (RE-RNN) to accurately detect stress. Hence, the African Buffalo Optimization (ABO) is proposed to adjust RE-RNN, which precisely classifies stress detection. The performance of the proposed RE-RNN approach attains 99.89%, 98 98.76 and 98.07% high accuracy, and 0.1%,\u0000 0.2%, and 0.2% lower computation Time.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141695325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Efficient Low-Power Retinal Nano Electronic Circuit for Edge Enhancement and Detection Using 7 nm FinFET Technology","authors":"Md Turiqul Islam, A. Al-Shidaifat, Mohammad Khaleqi Qaleh Jooq, Hanjung Song","doi":"10.1166/jno.2024.3616","DOIUrl":"https://doi.org/10.1166/jno.2024.3616","url":null,"abstract":"This study proposed a 7 nm FinFET based analog one pixel circuit block inspired by lateral inhibition phenomenon to perform edge enhancing and edge detection of optoelectronic image. This plays a crucial role in retinomorphic applications like artificial human retinal functions. Proposed\u0000 Edge enhancement and edge detection circuits are constructed using two distinct 750×750-pixel silicon networks. First the single pixel circuit cell is reconstructed with the lateral inhibition phenomenon, then the circuit using GPDK (Generic Process Design Kit) in 180 nm, 90 nm, and\u0000 45 nm CMOS technology is designed. We used 3×3 convolution process for image masking in digital and analog image signal processing which gives more accuracy in term of object recognition. The power consumption in each case is obtained to be approximately 19.71 μW, 4.18 μW\u0000 and 1.62 μW for edge enhancing and 23.76 μW, 7.99 μW and 3.41 μW for edge detection which is much larger than the power consumed by the same circuit is implemented with 7 nm FinFET (Fin Field Effect Transistor) technology, 21.91 pW and 24.85 pW. In addition,\u0000 the size reduction of the circuit reduced by 84% compared with 45 nm CMOS, increases the accuracy of the circuit by 30%. Results confirm that FinFET based single pixel circuit consumes less power, reduces size, and gives higher accuracy. The output from all the circuits has been matched with\u0000 the biological response.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141229795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing CdSe/ZnS Quantum-Dot Light-Emitting Diode Performance: The Impact of Thermal Treatment Atmospheres on Fabrication Processes","authors":"Jimin Lee, Honyeon Lee","doi":"10.1166/jno.2024.3615","DOIUrl":"https://doi.org/10.1166/jno.2024.3615","url":null,"abstract":"We explored the thermal treatment impact on the performance of quantum-dot light-emitting diodes (QLEDs). The QLEDs comprised multiple layers: a 2.2-μm thick epoxy buffer layer; a bottom cathode composed of 12-nm MoOx/10-nm Ag/12-nm MoOx; a 20-nm ZnO\u0000 electron transporting layer (ETL); a 10-nm CdSe/ZnS quantum dot light emission layer (EML); a 40-nm 4,4′,4″-Tris(carbazol-9-yl) triphenylamine hole transporting layer; a 10-nm WOx hole injection layer; and a 100-nm Ag top anode. We applied thermal treatments to the cathode,\u0000 ETL, and EML separately to assess their effects on the QLEDs. Additionally, we evaluated the impact of the thermal treatment atmosphere. Vacuum thermal treatment on the cathode and EML resulted in minor improvements in QLED performance, whereas treatment of the ETL led to a decline in performance.\u0000 In contrast, air thermal treatment on the cathode and EML decreased QLED performance but significantly improved it by 15% in current efficiency when applied to the ETL. The performance differences attributable to the thermal treatment atmosphere are likely due to ligand removal and oxidation\u0000 processes, facilitated by thermal energy and oxygen. Our study highlights that air thermal treatment on the ETL substantially improves QLED performance, offering crucial insights into the significance of thermal treatment in QLED development.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141229546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Efficient Lightweight Crypto Security Module for Protecting Data Transmission Through IOT Based Electronic Sensors","authors":"Fekry Olayah, Mohammed Al Yami, H. Abosaq, Yahya Ali Abdelrahman Ali, Md. Ashraf Siddiqui, Reyazur Rashid Irshad, Samreen Shahwar, Asharul Islam, Rafia Sultana","doi":"10.1166/jno.2024.3609","DOIUrl":"https://doi.org/10.1166/jno.2024.3609","url":null,"abstract":"The Internet of Things (IoT) devices are advanced nanoelectronics devices which has recently witnessed an explosive expansion in the field of communication and electronics, becoming ubiquitous in various applications. However, the rapid growth of IoT applications makes them prone to\u0000 security threats and data breaches. Hence, cryptographic techniques are developed to ensure data confidentiality and integrity in IoT and many of the applications from optoelectronics. However, the existing cryptographic algorithms face challenges in securing the data from threats during transmission,\u0000 as they lack effective key management. Therefore, we proposed a novel optimized lightweight cryptography (LWC) to resolve this challenge using the combined benefits of Grey Wolf Optimization and Hyper Elliptic Curve Cryptography (GW-HECC). The proposed LWC algorithm protects the data from\u0000 attacks during data exchange by optimizing the key management process and aims to deliver greater Quality of Service (QoS) in IoT networks. An IoT network was initially created with multiple sensor devices, IoT gateways, and data aggregators. The proposed framework includes a Quantum Neural\u0000 Network (QNN)-based attack prediction module to predict the malicious data entry in the IoT network. The QNN learns the attack patterns from the historical IoT data and prevents incoming malicious data entries, ensuring that only normal data is transmitted to the cloud. For secure data transmission,\u0000 the sensed data from the IoT network are encrypted using the proposed GW-HECC. The presented work was designed and implemented in Python software; the experimental results demonstrate that the proposed method offers greater data confidentiality of 97.9%, improved attack prediction accuracy\u0000 of 99.8%, and a reduced delay of 0.37 s. Furthermore, a comparative analysis was made with existing cryptographic algorithms, manifesting that the proposed algorithm acquired improved results.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141234381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comparative Study on the Degradation of Methylene Blue and Methyl Orange Dyes Under the Irradiation of Visible Light Using GO–CdO Nanocomposites","authors":"M. B. Ruby Kamalam, S. S. R. Inbanathan, Jawed Mustafa, M. M. Abdullah, Shahid Husain, K. Sethuraman","doi":"10.1166/jno.2024.3608","DOIUrl":"https://doi.org/10.1166/jno.2024.3608","url":null,"abstract":"Cadmium oxide nanoparticles synthesized from alcoholic method using cadmium chloride monohydride and the composites with GO by simple dispersion method. Two nanocomposites with 5 Wt% and 10 Wt% loading of CdO over GO were prepared and named as GC1 and GC2 respectively. From XRD the\u0000 CdO nanoparticles were of crystalline nature and were indexed to JCPDS card no: 05-0640 corresponding to Cubic lattice system. The particle like morphology of the CdO was confirmed by SEM and TEM. The decoration of monolayer GO sheets by CdO nanoparticles was unveiled through these studies.\u0000 The Raman analysis reveals the presence of D and G peaks in the composites with an increased ID/IG ratio. UV-Vis study displays the absorption edge of CdO and a redshift is observed for GC2. From PL study, emission peak occurs at 358 nm for composites along with a quenching\u0000 of intensity for GC2. The TG-DT analysis reveals the thermal stability of pristine and nanocomposites. Photocatalytic degradation of the as synthesized samples was studied for Methylene orange and Methylene blue dye using a Xenon lamp with 500 W. The degradation of the GC2 happens in 90 minutes\u0000 with degradation efficiency 73% of was achieved for Methyl Orange dye. For Methylene blue the GC2 sample degrades only in 30 minutes with an efficiency of 94% was achieved.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141235608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of High Performance FinFET-Based Linear Feedback Shift Register for Cryptography Applications","authors":"M. Susaritha, J. Senthilkumar","doi":"10.1166/jno.2024.3613","DOIUrl":"https://doi.org/10.1166/jno.2024.3613","url":null,"abstract":"Nowadays, all the elements of our surrounding is occupied by electronics. Electronics occupies major role on our day today life. Electronics device integration on a single chip enhances performance in terms of speed, low-power circuits, and area. Integration of VLSI provides better\u0000 scalability and reliability. This research paper focused on the implementation of Linear feedback shift registers (LFSR) using FinFET techniques at the layout level for various applications, including cryptography. FinFETs are highlighted as a replacement for CMOS technology, offering advantages\u0000 such as improved performance in terms of speed, low-power circuits, and area. Linear feedback shift registers are commonly used in digital systems and cryptography for generating pseudo-random sequences. The use of FinFET technology in the layout level suggests an interest in exploring advanced\u0000 semiconductor technologies to enhance the performance of these circuits. The paper appears to cover different design methods of LFSRs, which could include aspects like circuit optimization, power efficiency, and reliability. The integration of electronics on a single chip, particularly with\u0000 FinFET technology, is noted for its potential to provide better scalability and reliability. The first architecture is created using bulk CMOS techniques; whereas the second is constructed using two fin FinFET LFSRs. Using the Microwind designing tool, the third technique is developed with\u0000 a 3-fin FinFET LFSR. It provides a solution for a novel FinFET architecture that implements LFSR. When comparing CMOS and FinFET circuit designs for LFSR, the latter achieves superior performance in terms of area and power efficiency. An analysis is conducted on the design techniques and performance\u0000 of CMOS LFSR, 2 fin FinFET based LFSR, and 3 fin FinFET. According to the experimental findings, the CMOS-based LFSR uses 1.243 mW of power; the FinFET-based LFSR uses 90.47 μW, and the two fin FinFET LFRS uses 0.254 mW.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141234745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of a Hybrid Meta-Heuristic Optimizer for Modelling a Multi-Level Inverter","authors":"V. Bharath Choudary, A. Kavithamani","doi":"10.1166/jno.2024.3607","DOIUrl":"https://doi.org/10.1166/jno.2024.3607","url":null,"abstract":"Meta-heuristic (MH) algorithms have significantly impacted optimization in several technical domains. These algorithms must be implemented in hardware for several technical applications. Hence their performance is essential. Multilayer inverter failure detection is widely applied in\u0000 High Voltage DC (HVDC) conduction and Industrialized Drives. It uses various meta-heuristic techniques and a NN (Neural Network) as the DM (Decision-Making) mechanism. After the network has been trained for various failure scenarios in the multilevel inverter, the weight and bias parameters\u0000 are optimized using a MH optimizer to compare the model’s performance. The output of a Multilevel Inverter (ML9LI) supplied by the system is approximated and inferred using a MATLAB-based approach. Features gained from the multi-level inverter, such as positive, negative, and zero sequence\u0000 voltage and the THD of the output voltage, boost the FD (Fault Detection) ability when using a renewable energy-based power generation system as the basis for the inverter. Particle Swarm Optimization (PSO) and Firefly optimization (FO) are hybridized to form Multi-level Inverter (MLI)-based\u0000 optimization methods are employed.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141230784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Performance Analysis of Photovoltaic Power Generation Light Emitting Diode Device","authors":"Xi Fang, Xiaolu Li","doi":"10.1166/jno.2024.3610","DOIUrl":"https://doi.org/10.1166/jno.2024.3610","url":null,"abstract":"This research focuses on an independent photovoltaic power generation system with supercapacitor energy storage as the study subject. The model is simplified, and the photovoltaic power generation light emitting diode (LED) device is designed based on the given parameters. This system\u0000 selects a Boost-type step-up converter for the supercapacitor charging circuit, capable of achieving Maximum Power Point Tracking (MPPT). The supercapacitor discharge circuit employs an LM2596 series regulator to power the rated load LED (12 V, 1 W), providing good linear regulation capability.\u0000 In designing other hardware components of the device, the characteristics of a photoresistor are utilized to implement an automatic load switch circuit. An efficient single-chip integrated circuit LM2575 series is used as a regulator to convert the voltage across the supercapacitor terminals\u0000 to +15 V and +5 V. Considering the need to collect the output voltage of the photovoltaic cell array and the voltage across the supercapacitor terminals, a resistor divider method is used to sample these two voltages. The sampling circuit includes a resistor divider circuit and a linear optocoupler\u0000 isolation circuit. An HNC-25LTS series Hall current sensor is used for current sampling to measure AC, DC, and pulse signals under electrical isolation conditions. The supercapacitor, solar photovoltaic panel, control unit, and the main circuit for supercapacitor charging and discharging have\u0000 been assembled in the experiment. Connecting the charging and discharging circuit with the photovoltaic panel and LED, the system provides power to the LED during the night. Under varying light intensity and temperature conditions, the photovoltaic output voltage waveform, PWM waveform, and\u0000 Boost circuit output voltage waveform remain stable when reaching the MPPT point. The output power with added MPPT control at different times is compared. The results indicate that the designed system has effectively achieved the functionality of MPPT for solar energy.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141230065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intelligent Light Emitting Diode Flashing Supplementary Lighting Control Design and Its Big Data Illumination Analysis","authors":"Xu Huang, Huibin Xu, Wuming He, Mengjia Zeng, Mengfei Wu","doi":"10.1166/jno.2024.3611","DOIUrl":"https://doi.org/10.1166/jno.2024.3611","url":null,"abstract":"Considering the inherent advantages of the Light Emitting Diode (LED) in the field of illumination, this work designs an intelligent supplementary lighting system using LED as the light source. Combining microcontroller and electronic circuit theory, the circuit is built with the microcontroller\u0000 PIC16F873 as the core control chip. The system utilizes an external 220 V AC-20 V DC conversion power supply, hence operating on a 20 V DC power source. The system consists of four hardware parts: the onboard power supply uses TI-produced TPS54331 as the control chip to achieve voltage conversion;\u0000 the external signals (flashing and burst flashing signals) are isolated from the microcontroller through an optocoupler circuit; the PWM pulses output from the microcontroller’s RC1/CCP2 pins drive the corresponding switching tubes to achieve the flashing function; the flashing synchronization\u0000 signal is output externally after optocoupler isolation, and its synchronous output with the flashing signal is achieved through an optocoupler after LED conduction; the circuit is established using TI-produced differential bus transceiver SN65LBC184D to convert the external 485 differential\u0000 signal to the level signal required by the microcontroller. In the experiment, after completing the hardware design, connecting the LED panel, and debugging the test program, it is found that the designed lighting system has a good supplementary lighting effect. According to the PWM output\u0000 waveform, the flashing effect meets the design expectations. The Hadoop big data computing platform is introduced. Simulation testing reveals that under no backlight conditions, the system achieves an illumination intensity of around 20 klx at a distance of about 10 meters. With backlight\u0000 conditions, the system maintains an illumination intensity of around 1.5 klx at a distance of about 10 meters. Further calculations are performed to analyze the variation in foot traffic within the test area’s illumination over 24 hours. The total illumination intensity during different\u0000 time intervals is compiled, confirming that the system can autonomously adjust the illumination intensity of the area based on changes in foot traffic.","PeriodicalId":16446,"journal":{"name":"Journal of Nanoelectronics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.6,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141233135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}