2012 Symposium on Photonics and Optoelectronics最新文献_第8页

Back-Focal-Plane Interferometry for 3D Position Tracking in Optical Tweezers 光镊中三维位置跟踪的后焦平面干涉测量

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270909

Hongjun Liu, Hui-zhu Hu, Minqiang Tie, Wei Zhang, Yu-qing Shen

引用次数: 0

Size-Dependent in MWNTs/PDMS Composite Films MWNTs/PDMS复合薄膜的尺寸依赖性

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6271065

Q. Lv, Xiqu Chen, Z. Gan

引用次数: 0

Quantitative Analysis of Pb with Laser-Induced Breakdown Spectroscopy in Human's Nail 激光诱导击穿光谱法定量分析人指甲中铅

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270427

Jianhua Ye, X. Wan, Zhi-min Zhang, Qi Chen, Changhai Deng, Jiakun Zhao

引用次数: 2

Eu2+, Mn2+ Co-Doped Ba3MgSi2O8 Single-Host White Emission Phosphor Eu2+， Mn2+共掺杂Ba3MgSi2O8单主发光荧光粉

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270948

Xin Zou, Changyu Shen, Jin-lei Chu, Yi Yang

引用次数: 0

Temperature Effect of Photoluminescence from Aqueous CdSe Quantum Dots 水相CdSe量子点光致发光的温度效应

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270976

J. Yi, L. An, X. Han, C. Liu, J. Chi, Y. Wen

{"title":"Temperature Effect of Photoluminescence from Aqueous CdSe Quantum Dots","authors":"J. Yi, L. An, X. Han, C. Liu, J. Chi, Y. Wen","doi":"10.1109/SOPO.2012.6270976","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270976","url":null,"abstract":"Thiol-capped CdSe quantum dots are synthesized rapidly in aqueous solution assisted by microwave irradiation without any poisonous materials. The growth rate of quantum dots is greatly enhanced in this current microwave synthesis. The narrow size distribution (~30nm) of CdSe quantum dots is similar to the oil samples. The results indicate that the photoluminescence quality of quantum dots is improved effectively assisted by microwave irradiation compared to traditional aqueous solution. Room and low temperature photoluminescence is employed to investigate the excitonic emission from thiol-capped CdSe quantum dots between 83K and 300K. The photoluminescence peak position of CdSe quantum dots shift to shorter wavelengths. The relationship between the shift wavelengths and the temperature is linear. The slope for linear fitting curve is nearly constant in repeated experiment. This implies CdSe quantum dots may be applied in the low temperature nano-sensor. The photoluminescence intensity first enhances and then quench with decrease of temperature. The temperature dependence of the photoluminescence intensity is demonstrated through thermal escape and thermal rectification of surface trap states.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127606648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Progress and Application of Optical Fibre Probes for In Vivo Raman Spectroscopy 体内拉曼光谱光纤探针的研究进展及应用

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6271035

Weisong Yi, Xianqing Luo

{"title":"Progress and Application of Optical Fibre Probes for In Vivo Raman Spectroscopy","authors":"Weisong Yi, Xianqing Luo","doi":"10.1109/SOPO.2012.6271035","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271035","url":null,"abstract":"Raman spectroscopy with optical fibre probes, a kind of vibrational spectroscopy providing detailed information about molecular composition and structure of tissues. The great appeal of Raman spectroscopy lies in its potential for in vivo applications and its ability to therefore direct real-time therapeutic intervention. Objective: The purpose of this study was to discuss optical fibre probes for in vivo Raman Spectroscopy and its clinical implementation. Methods: Important progress of technology and application in medicine were introduced and summarized. Results: Raman spectroscopy equipment with optical fibre probes, meets important prerequisites for the development of tools for in vivo real time tissue analysis, during clinical procedures such as endoscope, biopsy, and surgery. Conclusion: In vivo diagnostic tools are much needed in many fields of medicine to take the sometimes unavoidable guesswork out of current clinical procedures, to avoid long delays caused by ex vivo evaluation of patient material, or to simply replace current invasive methods by noninvasive or less invasive techniques. In vivo Raman spectroscopy may fulfil a role in all of these fields.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127649782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication and Characterization of Si/GaInP Heterojunction Photodetectors Si/GaInP异质结光电探测器的制备与表征

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6271117

Munho Kim, Jung‐Hun Seo, Hongjun Yang, Jian Shi, Luke J. Mawst, Weidong Zhou, Xudong Wang, Z. Ma

引用次数: 0

The Optical Communication System of the Wild Internet of Things for One-to-Multi-Points 面向一对多点的野生物联网光通信系统

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270933

G. Wen, Shuang Wang, Yining Mu, Jingyi He

引用次数: 0

The LM Algorithm Research in Brillouin Scattering Spectra Information Based on the Weighted Least Squares 基于加权最小二乘的布里渊散射光谱信息的LM算法研究

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6270510

Wei Yu, Shengpeng Wan, B. Li, Lin Zhong, Wengang Hu, Wei Wang

引用次数: 1

4H-SiC and Si Based IGBTs/VDMOSFETs Characters Comparison 基于4H-SiC和Si的igbt / vdmosfet特性比较

2012 Symposium on Photonics and Optoelectronics Pub Date : 2012-05-21 DOI: 10.1109/SOPO.2012.6271084

Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang

{"title":"4H-SiC and Si Based IGBTs/VDMOSFETs Characters Comparison","authors":"Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang","doi":"10.1109/SOPO.2012.6271084","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271084","url":null,"abstract":"In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and devices rating voltage. MATLAB software was used to calculate those above characteristics, the calculation results show that, for given doping concentration, the carrier mobility of 4H-SiC is lower than that of silicon, so its conducting output currents are also smaller than that of silicon in the same design rule of same chip area and same devices terminal bias conditions, for example, when 4H-SiC and Si with same doping concentration of 1015cm-3 and same bias conditions of gate-source voltage 18V/drain-source voltage 2V, the carrier mobility and conducting current are 990.9cm2/V/s and 6.686mA for 4H-SiC, which is only about 74.4% and 55.9% that of silicon with value of 1332.0cm2/V/s and 11.950mA, respectively. However, for devices breakdown voltage of 4000V, the turn-on time for 4H-SiC, 27.88ns, is shorter than that of silicon, 110.30ns, this is because the wide bandgap material 4H-SiC will have higher epilayer doping concentration and thinner epilayer thickness when compared with silicon for given devices blocking voltage, this will lead the more fast turn-on and switching characteristics of 4H-SiC devices than that of Si devices.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133870878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1