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Conference Digest.,11th IEEE International Semiconductor Laser Conference最新文献

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High performance tunable 1.5 μm InGaAs/InGaAsP multiple-quantum-well distributed-Bragg-reflector lasers 高性能可调谐1.5 μm InGaAs/InGaAsP多量子均匀分布bragg反射激光器
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1988-12-01 DOI: 10.1109/SLCON.1988.26185
T. Koch, U. Koren, B. Miller
{"title":"High performance tunable 1.5 μm InGaAs/InGaAsP multiple-quantum-well distributed-Bragg-reflector lasers","authors":"T. Koch, U. Koren, B. Miller","doi":"10.1109/SLCON.1988.26185","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26185","url":null,"abstract":"Tunable semiconductor lasers[1-3] are expected to play a major roll in both high-speed direct detection wavelength-division-multiplexed (WDM) systems and coherent heterodyne detection systems. Here we describe the structure and properties of multi-section tunable dynamic-single mode multiple-quantum-well (MQW) distributed-Bragg-reflector (DBR) lasers operating at 1.5 μm. These lasers display how threshold, excellent differential quantum efficiency, large tuning range, with both low chirp under high-speed direct modulation and narrow linewidth under CW operation.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114757891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer 具有MQW有源层的模式稳定AlGaInP可见光(λ L = 646nm)半导体激光二极管的连续工作
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26158
S. Kawata, K. Kobayashi, Hiroaki Fujii, I. Hino, Akiko Gowya, H. Hotta, Tohru S. Suzuki
{"title":"Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer","authors":"S. Kawata, K. Kobayashi, Hiroaki Fujii, I. Hino, Akiko Gowya, H. Hotta, Tohru S. Suzuki","doi":"10.1109/SLCON.1988.26158","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26158","url":null,"abstract":"(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129601566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of bandfilling on the threshold current of GaAs/AlGaAs multi quantum well lasers 带填充对GaAs/AlGaAs多量子阱激光器阈值电流的影响
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26146
R. Nagarajan, T. Kamiya, A. Kurobe
{"title":"Effects of bandfilling on the threshold current of GaAs/AlGaAs multi quantum well lasers","authors":"R. Nagarajan, T. Kamiya, A. Kurobe","doi":"10.1109/SLCON.1988.26146","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26146","url":null,"abstract":"In this paper we present an improved model for Multi Quantum Well (MQW) laser operation, carefully considering the bandfilling processes. And test its validity using experimental data for threshold current dependence on the cavity length and the number of wells.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132494066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extremely low threshold InGaSsp/InP DFB PPIBH laser diode 极低阈值InGaSsp/InP DFB PPIBH激光二极管
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26133
Y. Ohkura, A. Takemoto, N. Yoshida, K. Isshiki, S. Kakimoto, H. Namizaki, W. Susaki
{"title":"Extremely low threshold InGaSsp/InP DFB PPIBH laser diode","authors":"Y. Ohkura, A. Takemoto, N. Yoshida, K. Isshiki, S. Kakimoto, H. Namizaki, W. Susaki","doi":"10.1109/SLCON.1988.26133","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26133","url":null,"abstract":"We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121691988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dynamic longitudinal mode stability in quarter wave shifted DFB lasers 四分之一波移DFB激光器的动态纵模稳定性
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26181
S. Tsuji, M. Okai, H. Nakano, N. Chinone, M. Choy
{"title":"Dynamic longitudinal mode stability in quarter wave shifted DFB lasers","authors":"S. Tsuji, M. Okai, H. Nakano, N. Chinone, M. Choy","doi":"10.1109/SLCON.1988.26181","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26181","url":null,"abstract":"Stable single mode operation of semiconductor lasers are of great interest for multi-giga bit long-span optical fiber communications. [1] Especially, quarter wave shifted (QWS-) DFB lasers are expected to be one of the most attractive light sources, because of their large threshold gain difference between a main mode and sub modes.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116616147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High sped (13 GHz) 1.5 μm self-aligned constricted mesa DFB lasers grown entirely by MOCVD 高速(13 GHz) 1.5 μm自对准收缩台面DFB激光器完全由MOCVD生长
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26152
Y. Hirayama, H. Furuyama, M. Morinaga, N. Suzuki, Y. Uematsu, K. Eguchi, M. Nakamura
{"title":"High sped (13 GHz) 1.5 μm self-aligned constricted mesa DFB lasers grown entirely by MOCVD","authors":"Y. Hirayama, H. Furuyama, M. Morinaga, N. Suzuki, Y. Uematsu, K. Eguchi, M. Nakamura","doi":"10.1109/SLCON.1988.26152","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26152","url":null,"abstract":"Objective high speed 1.5 μm InGaAsP/InP DFB lasers are required for use in long haul multigigabit optical communication systems.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125091218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Two solutions that achieve high-power (>200mW) diffraction-limited-beam, array operation: 1) Out-of-phase coupled positive index guides, and 2) Closely spaced antiguides 实现高功率(>200mW)衍射受限光束阵列操作的两种解决方案:1)失相耦合正折射率波导，2)紧密间隔反波导
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26140
D. Botez, L. Maws, T. Roth, P. Hayashida, G. Peterson
{"title":"Two solutions that achieve high-power (>200mW) diffraction-limited-beam, array operation: 1) Out-of-phase coupled positive index guides, and 2) Closely spaced antiguides","authors":"D. Botez, L. Maws, T. Roth, P. Hayashida, G. Peterson","doi":"10.1109/SLCON.1988.26140","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26140","url":null,"abstract":"Progress in diffraction-limited arrays has been slow. The fundamental-mode beam of evanescently-coupled devices invariably broadens at powers >40 mW, because of the gain spatial hole burning (SHB). Y-junction coupled devices, while immune to gain SHB, have beams 3.5-4 times the diffraction limit due to weak coupling. Here we present two solutions for high-power, diffraction-limited operation: 1) devices operating in array modes stable against gain SHB: and 2) devices immune to game SHB, yet strongly coupled.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123142378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A vertical cavity GaIlAs/AlAs DBR surface emitting laser and its lasing characteristics 一种垂直腔体GaIlAs/AlAs DBR表面发射激光器及其激光特性
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26202
T. Sakaguchi, F. Koyama, K. Iga
{"title":"A vertical cavity GaIlAs/AlAs DBR surface emitting laser and its lasing characteristics","authors":"T. Sakaguchi, F. Koyama, K. Iga","doi":"10.1109/SLCON.1988.26202","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26202","url":null,"abstract":"This paper presents the first room temperature pulsed operation of a vertical cavity surface emitting (SE) laser with an electrically conductive GaAlAs/AlAs DBR. A necessary criterion for lasing operation of SE lasers [1] is discussed by using the result obtained.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131409402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Four-wave mixing in semiconductor lasers due to beat frequency inversion modulation 由于拍频反转调制的半导体激光器中的四波混频
Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI: 10.1109/SLCON.1988.26208
W. Elsasser, R. Nietzke, P. Panknin, E. Gobel
{"title":"Four-wave mixing in semiconductor lasers due to beat frequency inversion modulation","authors":"W. Elsasser, R. Nietzke, P. Panknin, E. Gobel","doi":"10.1109/SLCON.1988.26208","DOIUrl":"https://doi.org/10.1109/SLCON.1988.26208","url":null,"abstract":"Direct experimental evidence for beat frequency inversion modulation as the microscopic origin of four-wave mixing signals in semiconductor lasers is presented.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124459467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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