具有MQW有源层的模式稳定AlGaInP可见光(λ L = 646nm)半导体激光二极管的连续工作

Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI:10.1109/SLCON.1988.26158

S. Kawata, K. Kobayashi, Hiroaki Fujii, I. Hino, Akiko Gowya, H. Hotta, Tohru S. Suzuki

{"title":"具有MQW有源层的模式稳定AlGaInP可见光(λ L = 646nm)半导体激光二极管的连续工作","authors":"S. Kawata, K. Kobayashi, Hiroaki Fujii, I. Hino, Akiko Gowya, H. Hotta, Tohru S. Suzuki","doi":"10.1109/SLCON.1988.26158","DOIUrl":null,"url":null,"abstract":"(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.","PeriodicalId":157421,"journal":{"name":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer\",\"authors\":\"S. Kawata, K. Kobayashi, Hiroaki Fujii, I. Hino, Akiko Gowya, H. Hotta, Tohru S. Suzuki\",\"doi\":\"10.1109/SLCON.1988.26158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.\",\"PeriodicalId\":157421,\"journal\":{\"name\":\"Conference Digest.,11th IEEE International Semiconductor Laser Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest.,11th IEEE International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SLCON.1988.26158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest.,11th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SLCON.1988.26158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

(藻类)e.5Ino。5P是600nm波段半导体激光二极管(ld)极具吸引力的材料。在合金体系中，有两种缩短激光波长的方法。一种是增加活性层的铝量。因此，对工作在662nm(298K)1和584nm(77k)2的LDS进行了报道。另一种方法是在有源层中使用(多)量子阱(MDQW)结构。仅报道了波长为668nm的增益制导wqm LD3的连续波操作。本文首次报道了具有MQW有源层的模型稳定短波长(646nm) AlGaInP ld。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer

(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Digest.,11th IEEE International Semiconductor Laser Conference

CiteScore

0.40

自引率

0.00%

发文量