Cw operation of mode-stabilized AlGaInP visible light ( λ L = 646nm) semiconductor laser diodes with MQW active layer

Abstract

(AlGa-) e.5Ino.5P is an extremely attractive material for 600nm-band semiconductor laser diodes (LDs). In the alloy system, there are two methods to shorten the lasing wavelength. One is increasing the amount of aluminum for an active layer. So for LDS operating at 662nm(298K)1 and 584nm(77k)2 were reported. The other method is employing a (multi)-quantum-well ((MDQW)-structure for an active layer. CW operation was reported only for a gain-guided-WQM LD3 with a 668nm wavelength. This paper reports first model stabilized short-wavelength (646nm) AlGaInP LDs with MQW active layer.