Effects of bandfilling on the threshold current of GaAs/AlGaAs multi quantum well lasers

Conference Digest.,11th IEEE International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI:10.1109/SLCON.1988.26146

R. Nagarajan, T. Kamiya, A. Kurobe

引用次数: 0

Abstract

In this paper we present an improved model for Multi Quantum Well (MQW) laser operation, carefully considering the bandfilling processes. And test its validity using experimental data for threshold current dependence on the cavity length and the number of wells.

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带填充对GaAs/AlGaAs多量子阱激光器阈值电流的影响

在本文中，我们提出了一个改进的多量子阱(MQW)激光操作模型，仔细考虑了带填充过程。并用实验数据验证了阈值电流随空腔长度和井数变化的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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