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2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)最新文献

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Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility 推动溅射hfo2基铁电体向BEOL相容性发展
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052145
Xuetao Wang, T. Mikolajick, M. Grube
{"title":"Pushing Sputtered HfO2-Based Ferroelectrics toward BEOL Compatibility","authors":"Xuetao Wang, T. Mikolajick, M. Grube","doi":"10.1109/NMDC46933.2022.10052145","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052145","url":null,"abstract":"In this work, we investigate the back-end-of-line (BEOL) compatibility of the TiN/Hf<inf>1-x</inf>Zr<inf>x</inf>O<inf>2</inf> (HZO)/TiN thin-film capacitors by exploiting the effect of sputtering power, ZrO<inf>2</inf> content and process pressure. The variation of double remanent polarization (2P<inf>r</inf>) suggests a crystal phase transformation in the HZO film when the sputtering power is altered. A change in the dielectric constant also supports this behavior. After tuning the process pressure, we could lower the required thermal budget for crystallization to 400°C, which is thermally compatible with BEOL processes. Moreover, the optimal sputtering parameters could reach 2P<inf>r</inf> of 36 μC/cm<sup>2</sup> with an endurance of up to 10<sup>7</sup> cycles. High 2P<inf>r</inf> and good endurance achieved with low-temperature annealing is a breakthrough for sputtered HfO<inf>2</inf>-based thin films and shows a promising future for integrating sputtered HZO into BEOL processes.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126185298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MTJ-Based p-Bit Designs for Enhanced Tunability 基于mtj的p位增强可调性设计
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052369
Saleh Bunaiyan, Feras Al-Dirini
{"title":"MTJ-Based p-Bit Designs for Enhanced Tunability","authors":"Saleh Bunaiyan, Feras Al-Dirini","doi":"10.1109/NMDC46933.2022.10052369","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052369","url":null,"abstract":"Probabilistic bits (p-bits) can be viewed as tunable random number generators (RNGs), whose stochasticity coupled with their tunability makes them enablers for an emerging class of applications, including probabilistic computing. Their tunability is the feature that makes them unique to conventional RNGs. This paper studies the tunability range of existing p-bit designs reported in the literature, highlighting that existing designs have a limited input voltage range within which the p-bit’s stochastic response can be tuned, on the order of sub 0.5 V. This may greatly limit their scalability in large p-bit networks. Accordingly, this work proposes several variant p-bit designs that enable a wider input voltage tunability range and a more continuous response for p-bits. The designs employ both bipolar and continuous stochastic MTJs, and demonstrate an enhancement in the tunability range beyond 4 V (close to half of the supply voltage range).","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128659617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
2D Transition Metal Dichalcogenide (TMDC) Nanoelectromechanical Resonators 二维过渡金属二硫化物(TMDC)纳米机电谐振器
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052223
Zuheng Liu, Rui Yang
{"title":"2D Transition Metal Dichalcogenide (TMDC) Nanoelectromechanical Resonators","authors":"Zuheng Liu, Rui Yang","doi":"10.1109/NMDC46933.2022.10052223","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052223","url":null,"abstract":"With the development of the Internet of Things (IoT), new sensors and signal processing elements that consume near-zero power to operate on resonance, have high tunability and small form factor are necessary. The ultralow mass and large resonance tunability make resonant two-dimensional (2D) nanoelectromechanical systems (NEMS) suitable for ultrasensitive mass, force and biomolecular sensing, radio-frequency (RF) front end, and strain-tunable devices for memory and computing. Among the 2D materials, transition metal dichalcogenides (TMDCs) have ultralow mass, sizable bandgap, large Young’s modulus, and high strain limit, thus the 2D TMDC resonators only require picowatt level of power for sustaining the strong and stable resonance operations, have intriguing electromechanical coupling properties, have high frequency, and are highly tunable by strain. In this manuscript, we summarize the recent advances in 2D TMDC NEMS resonators, and show their potential applications. These TMDC resonators open new opportunities towards new types of sensors, RF signal processing elements, and computing devices that require near-zero power to operate on resonance, and at the same time, have wide dynamic ranges and tuning ranges.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125357212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reservoir Computing-Based Real-Time Prediction for Quantized Conductance of Au Atomic Junctions 基于储层计算的Au原子结量子化电导实时预测
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052236
Yuki Shimada, M. Shimada, T. Miki, J. Shirakashi
{"title":"Reservoir Computing-Based Real-Time Prediction for Quantized Conductance of Au Atomic Junctions","authors":"Yuki Shimada, M. Shimada, T. Miki, J. Shirakashi","doi":"10.1109/NMDC46933.2022.10052236","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052236","url":null,"abstract":"Feedback-controlled electromigration method has been known to fabricate the atomic junction by controlling the quantized conductance on the Au nanowires. We demonstrated a real-time prediction of the quantized conductance on the Au nanowires dynamically inferred by reservoir computing on a real-time operating system. As a result, the root mean squared error in ballistic regime of the proposed system is 0.414. We believe that our system makes a valuable contribution to the fabrication of nanoscale devices in that it introduces the real-time prediction under running processes.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123612989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Evaluation of Performance Improvement by Sparse Operation in Ising Spin Computing 利用稀疏运算改进Ising自旋计算性能的实验评价
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052337
A. Yoshida, T. Miki, M. Shimada, Yuri Yoneda, J. Shirakashi
{"title":"Experimental Evaluation of Performance Improvement by Sparse Operation in Ising Spin Computing","authors":"A. Yoshida, T. Miki, M. Shimada, Yuri Yoneda, J. Shirakashi","doi":"10.1109/NMDC46933.2022.10052337","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052337","url":null,"abstract":"The ability to quickly solve combinatorial optimization problems is essential for improving society and industry. For solving the problems, we present extraction-type majority voting logic (E-MVL) that purposely discards the interaction between the spins by scheduling a parameter, called sparsity. In this paper, the intrinsic computation time of E-MVL is estimated by using step-to-solution (STS) which evaluates the performance independent of implementation. We show that the E-MVL can explore the ground state to the Sherrington-Kirkpatrick model essentially faster than highly optimized simulated annealing (SA). These results indicate that E-MVL is more effective for optimization problems than SA.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126177250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulation of Porous Silicon Morphology: Correlation with Dopant Concentration and Electrolyte Composition 多孔硅形态的调制:与掺杂剂浓度和电解质组成的关系
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052307
Mejo A. Johnny, Sriram Suresh, T. Choudhury, R. Padmanabhan
{"title":"Modulation of Porous Silicon Morphology: Correlation with Dopant Concentration and Electrolyte Composition","authors":"Mejo A. Johnny, Sriram Suresh, T. Choudhury, R. Padmanabhan","doi":"10.1109/NMDC46933.2022.10052307","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052307","url":null,"abstract":"While there have been extensive reports in literature regarding the synthesis of porous silicon layers using electrochemical anodization for their use in different applications, systematic studies regarding the influence of the substrate dopant concentration and the electrolyte composition on the pore dimensions have not not been extensively investigated. In this work, we have systematically looked at the influence of dopant concentration and different electrolyte compositions on the pore dimensions of the porous silicon layer, along with varying input current density and reaction time.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131006462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on Green Micro-LEDs Based on Self-Assembled InGaN Quantum Dots Grown by Molecular Beam Epitaxy 基于分子束外延生长自组装InGaN量子点的绿色微型led研究
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052303
Ying Gu, Wenxian Yang, Peng Zhang, Shan Jin, Xuefei Li, Jian-jun Zhu, Shulong Lu
{"title":"Investigation on Green Micro-LEDs Based on Self-Assembled InGaN Quantum Dots Grown by Molecular Beam Epitaxy","authors":"Ying Gu, Wenxian Yang, Peng Zhang, Shan Jin, Xuefei Li, Jian-jun Zhu, Shulong Lu","doi":"10.1109/NMDC46933.2022.10052303","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052303","url":null,"abstract":"Combining the advantages of low-dimensional and wide-gap semiconductors, InGaN quantum dots (QDs) are widely investigated as a candidate material for high-efficiency micro-LEDs. In this work, plasma-assisted molecular beam epitaxy (PAMBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs have a rather high density of over 3.0×1010 cm−2 and show good dispersion and relatively uniform size distribution. A green LED with the size of 300 μm × 300 μm based on InGaN/GaN multi-quantum dots (MQDs) was fabricated. In addition, the preparation of micro-LEDs with different diameters (from 4 μm to 20 μm) and arrays of them with an emission wavelength of 537 nm have been finished. The luminescence tests show that InGaN QD-based micro-LEDs have excellent wavelength stability with the increase of injection current density, which is attributed to the shielding effect of QDs on the polarized field. This performance is of great significance for full-color micro-LED displays.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115587039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanism Exploration of Enhanced Biosensing Performance for All-Carbon-Nanotube Thin-Film Transistors 提高全碳纳米管薄膜晶体管生物传感性能的机理探讨
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/NMDC46933.2022.10052370
Qinqi Ren, Shenhui Ma, Xiaofang Wang, Yiming Zhang, Min Zhang
{"title":"Mechanism Exploration of Enhanced Biosensing Performance for All-Carbon-Nanotube Thin-Film Transistors","authors":"Qinqi Ren, Shenhui Ma, Xiaofang Wang, Yiming Zhang, Min Zhang","doi":"10.1109/NMDC46933.2022.10052370","DOIUrl":"https://doi.org/10.1109/NMDC46933.2022.10052370","url":null,"abstract":"Biosensors based on carbon nanotube (CNT) thin-film transistors (TFTs) have outstanding potential for ultrasensitive and label-free DNA detection. However, at present, the sensing mechanisms of the all-carbon-nanotube biosensors with metallic CNTs as electrodes are still controversial. In this work, a platform is established for universal DNA detection. By analyzing the biosensor responses obtained by passivating the channel, electrodes and contact of the biosensors, respectively, the sensing mechanisms can be clearly investigated. It is found that the electrostatic gating is dominant, while the Schottky barrier modulation plays a relatively minor role, where the Schottky barrier height is co-modulated by the adsorbed DNA in the channel and electrodes.","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"170 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123466587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NMDC 2022 Organizing Committees NMDC 2022组委会
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/nmdc46933.2022.10052305
{"title":"NMDC 2022 Organizing Committees","authors":"","doi":"10.1109/nmdc46933.2022.10052305","DOIUrl":"https://doi.org/10.1109/nmdc46933.2022.10052305","url":null,"abstract":"","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114625829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NMDC 2022 Cover Page NMDC 2022封面
2022 IEEE Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2022-11-17 DOI: 10.1109/nmdc46933.2022.10052118
{"title":"NMDC 2022 Cover Page","authors":"","doi":"10.1109/nmdc46933.2022.10052118","DOIUrl":"https://doi.org/10.1109/nmdc46933.2022.10052118","url":null,"abstract":"","PeriodicalId":155950,"journal":{"name":"2022 IEEE Nanotechnology Materials and Devices Conference (NMDC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117025181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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