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Long-Term Reliability of Nanometer VLSI Systems最新文献

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Aging Effects in Sequential Elements 顺序元素中的老化效应
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_16
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Aging Effects in Sequential Elements","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_16","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_16","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125414957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physics-Based EM Modeling 基于物理的电磁建模
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_2
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Physics-Based EM Modeling","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_2","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_2","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129404870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Learning-Based DRM and Energy Optimization for Manycore Dark Silicon Processors 基于学习的多核暗硅处理器DRM与能量优化
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_10
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Learning-Based DRM and Energy Optimization for Manycore Dark Silicon Processors","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_10","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_10","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121340662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recovery-Aware DRM for Near-Threshold Dark Silicon Processors 近阈值暗硅处理器的恢复感知DRM
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_11
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Recovery-Aware DRM for Near-Threshold Dark Silicon Processors","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_11","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_11","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127157866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact EM Models for Multi-Segment Interconnect Wires 用于多段互连导线的紧凑型电磁模型
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_6
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Compact EM Models for Multi-Segment Interconnect Wires","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_6","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_6","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131425231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EM Assessment for Power Grid Networks 电网的电磁评估
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_7
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"EM Assessment for Power Grid Networks","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_7","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_7","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115773122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Aging Relaxation at Microarchitecture Level Using Special NOPs 使用特殊nop的微结构级老化弛豫
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_19
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Aging Relaxation at Microarchitecture Level Using Special NOPs","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_19","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_19","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133434462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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