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Long-Term Reliability of Nanometer VLSI Systems最新文献

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Aging-Aware Standard Cell Library Optimization Methods 感知老化的标准细胞库优化方法
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_15
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Aging-Aware Standard Cell Library Optimization Methods","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_15","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_15","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121275232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dynamic EM Models for Transient Stress Evolution and Recovery 瞬态应力演化与恢复的动态电磁模型
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_5
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Dynamic EM Models for Transient Stress Evolution and Recovery","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_5","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_5","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"6 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114023832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fast EM Stress Evolution Analysis Using Krylov Subspace Method 基于Krylov子空间法的快速电磁应力演化分析
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_3
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Fast EM Stress Evolution Analysis Using Krylov Subspace Method","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_3","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_3","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125602993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cross-Layer DRM and Optimization for Datacenter Systems 数据中心系统的跨层DRM和优化
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_12
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Cross-Layer DRM and Optimization for Datacenter Systems","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_12","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_12","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131203688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fast EM Immortality Analysis for Multi-Segment Copper Interconnect Wires 多段铜互连线的快速电磁不朽分析
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_4
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Fast EM Immortality Analysis for Multi-Segment Copper Interconnect Wires","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_4","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_4","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121306872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ExtraTime: Modeling and Analysis of Transistor Aging at Microarchitecture-Level 微结构级晶体管老化的建模与分析
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_20
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"ExtraTime: Modeling and Analysis of Transistor Aging at Microarchitecture-Level","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_20","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_20","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"1002 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123323754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reducing Processor Wearout by Exploiting the Timing Slack of Instructions 利用指令的时序松弛减少处理器损耗
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_21
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Reducing Processor Wearout by Exploiting the Timing Slack of Instructions","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_21","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_21","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121717685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resource-Based EM Modeling DRM for Multi-Core Microprocessors 基于资源的多核微处理器电磁建模DRM
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_8
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Resource-Based EM Modeling DRM for Multi-Core Microprocessors","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_8","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_8","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122038277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DRM and Optimization for Real-Time Embedded Systems 实时嵌入式系统的DRM和优化
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_9
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"DRM and Optimization for Real-Time Embedded Systems","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_9","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_9","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127339399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Aging-Aware Timing Analysis 年龄感知时序分析
Long-Term Reliability of Nanometer VLSI Systems Pub Date : 1900-01-01 DOI: 10.1007/978-3-030-26172-6_14
S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr
{"title":"Aging-Aware Timing Analysis","authors":"S. Tan, M. Tahoori, Taeyoung Kim, Shengcheng Wang, Zeyu Sun, S. Kiamehr","doi":"10.1007/978-3-030-26172-6_14","DOIUrl":"https://doi.org/10.1007/978-3-030-26172-6_14","url":null,"abstract":"","PeriodicalId":155569,"journal":{"name":"Long-Term Reliability of Nanometer VLSI Systems","volume":"50 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124912436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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