2023 IEEE International Memory Workshop (IMW)最新文献

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Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM 模拟导电金属氧化物- hfo2 ReRAM的物理建模与设计规则

2023 IEEE International Memory Workshop (IMW) Pub Date : 2023-05-01 DOI: 10.1109/IMW56887.2023.10145936

D. F. Falcone, S. Menzel, Tommaso Stecconi, A. L. Porta, Ludovico Carraria-Martinotti, B. Offrein, V. Bragaglia

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