2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)最新文献_第6页

RTL to GDSII Flow Implementation of 8-bit Baugh-Wooley Multiplier 8位Baugh-Wooley乘法器的RTL到GDSII流实现

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828876

Vidhi Pala, Vishank Makhe, Khyati Bhuva, R. Parekh

{"title":"RTL to GDSII Flow Implementation of 8-bit Baugh-Wooley Multiplier","authors":"Vidhi Pala, Vishank Makhe, Khyati Bhuva, R. Parekh","doi":"10.1109/5nano53044.2022.9828876","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828876","url":null,"abstract":"In this paper, the implementation of the Baugh-Wooley multiplier for 8-bit signed multiplication is performed from RTL to GDSII generation to incorporate the physical design (PD) flow. Firstly, the RTL file is generated using the Verilog implementation of an 8-bit signed Baugh-Wooley multiplier and this RTL file is used while going through PD flow. For RTL to GDSII flow the open-source EDA tools are used for different intermediate levels such as synthesis, placement, routing, and timing analysis. Profuse results like power, area, timing constraints, layout, and frequency are incorporated and compared between the two technology nodes: 180 nm and 45 nm. In addition to this, the results of Baugh-Wooley multiplier are quantified with Booth Multiplier. By incorporating both the multipliers, it is seen that the Baugh-Wooley multiplier requires 36.68 % less area than the Booth multiplier and hence it is area efficient. However, it requires 44.60 % more power and 60 % more delay. The Baugh-Wooley multiplier is preferred if area is concerned with better slack, while Booth Multiplier can be preferred if power is concerned. In this paper, the proposed Baugh-Wooley multiplier delay and power constraints are also compared with other works.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134114751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration 不同铝浓度下硼掺杂GaN的AlGaN led的模拟与比较

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828912

G. Dhivyasri, D. Nirmal, M. Manikandan, G. Gokiladeepa, J. Ajayan, M. Menagadevi

{"title":"Simulation and Comparison of AlGaN LEDs with Boron Doped GaN Well Using Assorted Aluminium Concentration","authors":"G. Dhivyasri, D. Nirmal, M. Manikandan, G. Gokiladeepa, J. Ajayan, M. Menagadevi","doi":"10.1109/5nano53044.2022.9828912","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828912","url":null,"abstract":"The influence of aluminium concentration on the optical devices of Gallium Nitride Light Emitting Diodes is examined to improve the optical performance of the Light Emitting Diodes. The investigations are done using physical simulator, Technology Computer-Aided Design (TCAD). Boron doped Gallium Nitride Light Emitting Diodes with four quantum Wells are considered. Radiative recombination, Auger recombination and Polarization models are utilized in simulations. The influence of the assorted aluminum concentration (0.2 and 0.3) in AlGaN/GaN and AlGaN/BGaN Light Emitting Diodes optical performance is presented. The boron concentration of proposed LED is considered as 10%. The analysis on device temperature, radiative recombination rate, luminous power and wavelength with respect to power spectral density are performed to obtain the efficient Light Emitting Diode. The TCAD simulation observations represents that the luminous power and radiative rate of Gallium Nitride Light Emitting Diodes with aluminium mole fraction of 0.2 shows better improvement when compared to 0.3 mole fraction of aluminium.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121439290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Predicting the tensile strength of materials applying machine learning for polymeric manufacturing 在聚合物制造中应用机器学习预测材料的抗拉强度

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828917

M. I. Sabaruddin, A. M. Khalid, C. M. Lee, M. A. Mahmood, R. Veena, Abul Kalam Azad, M. M. Nauman

{"title":"Predicting the tensile strength of materials applying machine learning for polymeric manufacturing","authors":"M. I. Sabaruddin, A. M. Khalid, C. M. Lee, M. A. Mahmood, R. Veena, Abul Kalam Azad, M. M. Nauman","doi":"10.1109/5nano53044.2022.9828917","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828917","url":null,"abstract":"This study compares and evaluates three Machine learning Algorithm in the field of polymeric film manufacturing. Compression moulding and extrusion-blow moulding were considered under the film manufacturing techniques. In this article, we are investigating how Principal Component Analysis (PCA) may be used to minimize the complexity of predictive and classification models such as k-nearest neighbors, artificial neural networks, and random forests. Using PCA, the provided dataset with 8 input parameters for Experiment 1 and 6 input parameters for Experiment 2 would be reduced and applied Machine learning algorithms for predicting the tensile strength of the material. The k-nearest neighbours (kNN) algorithm showed higher predictive abilities, with a coefficient of determination and Root mean square error of 96 percent and 1.09, respectively, for extrusion-blow moulded films. For compression molding, the ANN achieved 91 percent coefficient of determination and 1.11 as root mean square error. These algorithms can predict or categorize quality indices of commodities generated in multi-parameter manufacturing processes, such as the polymer manufacturing processes under study.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130759590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Gold thin film deposition in holey-Fiber based liquid sensor 金薄膜沉积对多孔光纤液体传感器的影响

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828870

P. M, Dhruv Kumar, Sonu Ashritha K. S, Pruthvi Uday, R. S

引用次数: 0

Analysis of significant parameters of miscellaneuos insulating fluids with Antioxidants 含抗氧剂混合绝缘液的重要参数分析

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828974

Dhanya, Helan Gethse, Diana Hyden, Muthu Selvi, Samuel Pakianathan

引用次数: 1

Transfer of 2D Nanostructures with Reduced Residues: Influence of Water-soluble Layer and Fabrication of Photodetector 还原残基二维纳米结构的转移:水溶性层的影响及光电探测器的制备

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828874

M. Sharma, Rajendra Singh, Aditya Singh

{"title":"Transfer of 2D Nanostructures with Reduced Residues: Influence of Water-soluble Layer and Fabrication of Photodetector","authors":"M. Sharma, Rajendra Singh, Aditya Singh","doi":"10.1109/5nano53044.2022.9828874","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828874","url":null,"abstract":"The application of 2D materials in electronics and optoelectronics requires a clean transfer process. Although the conventional transfer method has been employed to transfer 2D materials, it is ineffective for device application and large-area transfers. Here, we developed a water-soluble layer-based transfer (WSLT) technology that allows for the damage-free and clean transfer of 2D materials. The transferred film preserves the optical and electrical quality of the as-grown film as a consequence of the clean transfer. In addition, we fabricated a photodetector on MoS2 that has been transferred WSLT process and studied the photoresponse behavior. Our transfer approach significantly improved the photoresponse properties of the photodetector. The photo-to-dark current, responsivity, and detectivity were found to be 65, 0.84 mA/W, and 2.45 × 1011 Jones, respectively. The proposed process can be used to fabricate 2D/3D and 2D/2D heterostructures, flexible devices, etc. Other 2D materials, such as WS2, WSe2, ReS2, and others, can also be transferred using this approach.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132514009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Study of Ge-doped CH3NH3GexPb(1-x) I3 Perovskite Solar Cell By SCAPS-1D Software 基于SCAPS-1D软件的掺锗CH3NH3GexPb(1-x) I3钙钛矿太阳能电池的比较研究

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828904

K. Jha, S. Tripathy, A. Laref, T. Lenka

{"title":"Comparative Study of Ge-doped CH3NH3GexPb(1-x) I3 Perovskite Solar Cell By SCAPS-1D Software","authors":"K. Jha, S. Tripathy, A. Laref, T. Lenka","doi":"10.1109/5nano53044.2022.9828904","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828904","url":null,"abstract":"The methylammonium germanium doped lead iodide (CH<inf>3</inf>NH<inf>3</inf>Ge<inf>x</inf>Pb<inf>(1-x)</inf> I<inf>3</inf>) perovskite based solar cell is simulated using a solar cell capacitance simulator (SCAPS-1D) software. A comparative study is done to investigate perovskite solar cell (PSC) performance under AM 1.5G illumination. The structure of solar cells consists of Fluorine tin oxide (FTO) / Tin oxide (TiO<inf>2</inf>) / (CH<inf>3</inf>NH<inf>3</inf>GexPb<inf>(1-x)</inf> I<inf>3</inf>) / Cuprous oxide (Cu<inf>2</inf>O) / metal contact. Different configurations of Ge-doped methylammonium lead halide-based PSC have been compared in solar cell capacitance simulators. Thickness, donor concentration, and defect density of the CH<inf>3</inf>NH<inf>3</inf>GexPb<inf>(1-x)</inf>I<inf>3</inf> absorber layer are varied on the solar cell characteristics parameters (Fill factor (FF), Power conversion efficiency (PCE), Current density (J<inf>sc</inf>), Open circuit voltage (V<inf>oc</inf>)) of the solar cell device. Apart from that, the effect of anode metal work function is also investigated in this paper. We have optimized our device at 1014 cm−3 of defect density, 1000 nm of absorber thickness, and 1017 cm−3 of donor density. The simulation results show that CH<inf>3</inf>NH<inf>3</inf>Ge<inf>0.875</inf>Pb<inf>0.125</inf>I<inf>3</inf> based optimized PSC achieved the highest efficiency of 29.20 %. Further optimization of defect density (1013 cm−3) could give enhanced results of the PCE of 29.89 %, Voc of 1.03 V, FF of 88.3 %, and Jsc of 33.89 mA/cm2. In the last, anode metal contact with a work function greater than 5.0 eV is required to achieve higher efficiency.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"75 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131191434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Minimizing solar absorption losses in TiO2 particles-based passive daytime radiative cooling coatings 最大限度地减少二氧化钛粒子为基础的被动日间辐射冷却涂层的太阳吸收损失

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828875

Bhrigu Rishi Mishra, Karthik Sasihithlu

引用次数: 0

Design and Control Over Morphology of Pseudopeptidic Bottlebrush Polymer/Liquid Crystal Composites 伪多肽瓶刷聚合物/液晶复合材料的形貌设计与控制

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828980

A. Kumari, S. Dhawan, Hanuman Singh, V. Haridas, A. Sinha

{"title":"Design and Control Over Morphology of Pseudopeptidic Bottlebrush Polymer/Liquid Crystal Composites","authors":"A. Kumari, S. Dhawan, Hanuman Singh, V. Haridas, A. Sinha","doi":"10.1109/5nano53044.2022.9828980","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828980","url":null,"abstract":"Polymer liquid crystal composites (PLCCs) with controlled microstructures have several applications in nanotechnology and biology. We, herein, present the design, fabrication, and morphology of pseudopeptidic bottlebrush polymer and nematic liquid crystal composites. An array of extendable submicron to micron size architectures, viz., porous networks, spheres, particles, aggregates, and vesicles is generated from PLCC by appropriately modulating the concentration of polymer, liquid crystal (LC), and solvent in the composite. In addition, the formation of vesicular architectures is monitored with the variation of LC and polymer concentration. The average vesicles size grows from ~250 nm to ~1 µm as the LC concentration increases. The effective loading of LC in the vesicle core is further validated by Raman mapping. Various ultramicroscopic methods such as polarizing optical microscopy (POM), field-emission scanning electron microscopy (FESEM), and atomic force microscopy (AFM) are used to characterize the different microstructures. The methodology presented here, opens up a myriad of possibilities for fabricating high-performance PLCC-based technical devices.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130144118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Development of Reliable Low Power High Speed 4-Bit Array Multiplier using High Performance 1-Bit Full Adders 基于高性能1位全加法器的可靠低功耗高速4位阵列乘法器的设计与开发

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828873

D. Praneeth, R. Varshitha, Seelan Sai Prashanth, Varikoti Mahesh, Laxman Raju Thoutam, J. Ajayan

{"title":"Design and Development of Reliable Low Power High Speed 4-Bit Array Multiplier using High Performance 1-Bit Full Adders","authors":"D. Praneeth, R. Varshitha, Seelan Sai Prashanth, Varikoti Mahesh, Laxman Raju Thoutam, J. Ajayan","doi":"10.1109/5nano53044.2022.9828873","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828873","url":null,"abstract":"Arithmetic operations of binary numbers are the key requirements for all the latest data driven technological advancements including artificial intelligence and machine learning. The present work focuses on the design and development of reliable, low-power and high speed 4-bit array multiplier using high performance mirror and transmission gate based 1-bit full adders. The performance of the proposed 4-bit array multiplier is extensively analyzed for power and delay characteristics at various operational voltages (0.7V to 1.2V) for different technological nodes ranging from 16nm to 130nm.The proposed 16nm technological node 4-bit array multiplier using transmission gate based full-adder circuit dissipates a nominal power of 5.05 µW at an operational voltage of 0.7V, while it dissipates 18.17 µW for mirror full-adder circuit. The power dissipation increases with increasing operational voltage for the proposed 4-bit array multiplier using the two high-performance full adder circuits. The proposed 16nm technological node 4-bit array multiplier yields a delay of 6.37 ps at 1.2V for mirror full adder and the delay increases to nanoseconds regime for the transmission gate based full-adder. The increased delay is might be due to presence of pass-transistors in the transmission gate based full-adder design which require precise transistor scaling at sub-nanometer technological nodes. The simulation analysis suggests the use of mirror full-adder circuit in the development of high speed 4-bit array multipliers; and transmission gate based full-adder circuits for the design of low-power 4-bit array multiplier.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114177676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2