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2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)最新文献

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Design and Implementation of Effective Hybrid Reversible Multilayer Vedic Multiplier Using QCA-ST 基于QCA-ST的有效混合可逆多层吠陀倍增器的设计与实现
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828903
S. Sarkar, R. Roy
{"title":"Design and Implementation of Effective Hybrid Reversible Multilayer Vedic Multiplier Using QCA-ST","authors":"S. Sarkar, R. Roy","doi":"10.1109/5nano53044.2022.9828903","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828903","url":null,"abstract":"\"Quantum-Dot Cellular-Automata Spin-Technology\" (QCA-ST) based semiconductor devices are the appropriate replacement of \"Complementary Metal-Oxide Semiconductor\" (CMOS) based digital circuitries at recent digital era due to less complexity, less power requirement and dissipation, higher speed and a possibility to utilize reversible structures easily in 3D multilayer manner. The binary representation of any digital circuit can be presented in this advanced platform using nano-quantum cells. These quantum-cells are used in this work to reconfigure a multi bit Vedic Multiplier design with proper novelty and area-power-delay-complexity optimization. Reversible and majority gates are used in this proposed work in multilayer hybrid manner, which gives a stable result at the time of temperature increment and layer-separation-gap decrement takes place.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123628712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensitivity Estimation of Bragg Fibers having Double Defect Layers 双缺陷层Bragg光纤的灵敏度估计
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9829000
C. Yadav, A. Upadhyay, Vivek Singh
{"title":"Sensitivity Estimation of Bragg Fibers having Double Defect Layers","authors":"C. Yadav, A. Upadhyay, Vivek Singh","doi":"10.1109/5nano53044.2022.9829000","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9829000","url":null,"abstract":"The sensitivity of two Bragg fibers having symmetric and asymmetric double defect layers are studied, optimized, and compared. The thicknesses of symmetric defects are 267.24 nm and asymmetric defects are 113.30 nm and 267.24 nm. Two sharp defect modes arise due to the resonance of core and defect modes. The sensitivity of proposed waveguides depends on the separation between defect layers. Right defect mode of symmetric defected Bragg fiber shows maximum sensitivity.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128206660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of Electronic parameters of Carbon Nanotube random network Field-effect Transistors under liquid gated conditions using a machine learning approach 液体门控条件下碳纳米管随机网络场效应晶体管电子参数的机器学习预测
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828942
Thanihaichelvan Murugathas, V. R., N. Plank, Pirunthan Keerththinaathan, P. I, Prabu Mohandas
{"title":"Prediction of Electronic parameters of Carbon Nanotube random network Field-effect Transistors under liquid gated conditions using a machine learning approach","authors":"Thanihaichelvan Murugathas, V. R., N. Plank, Pirunthan Keerththinaathan, P. I, Prabu Mohandas","doi":"10.1109/5nano53044.2022.9828942","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828942","url":null,"abstract":"In this work, we employed a machine learning approach to predict the performance parameters of CNT bundle network field-effect transistors (FETs). The CNT bundle network FETs are complex system not only due to the random nature of the network but also due to the conductivity and work functions of bundles with both metallic and semiconducting tubes. It is difficult to model a whole network of CNT bundles with unknown conductivity and work function. In a recent work we examined 119 devices for investigate the role of CNT junctions in the electrical conduction and gating of CNT network FETs under liquid gated conditions. In this work we used the experimental data to train and predict the performance using the Support vector machine (SVM) technique. The CNT bundle density of the film measured by atomic force microscope images was used as the input parameter and the on-current, off-current and threshold voltage were the target. We were able to estimate the on current with an accuracy better than 90 percentage. However OFF current and threshold voltage prediction has an accuracy about 82 and 77 percent respectively. The 90-percentage accuracy for the on-current prediction can be attributed to the strong dependency of on-current with the CNT bundle density. However, the off-current and threshold voltage are depending on other parameters namely the presence of metallic CNTs within the bundles and the overall variations in the composition of network. Based on the experimental results, despite the unknown variables, we managed to predict the electronic parameters of a CNT network FETs with using the SVM techniques with significantly high accuracy.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129152930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Curing Free, Silver Nano Ink Based Inkjet Printed Fabrics for Bio-Medical Applications 生物医学用免固化、银纳米油墨喷墨印花织物
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828925
S. D., Rahul S G, Velmurugan S, Salveru Saiteja
{"title":"Curing Free, Silver Nano Ink Based Inkjet Printed Fabrics for Bio-Medical Applications","authors":"S. D., Rahul S G, Velmurugan S, Salveru Saiteja","doi":"10.1109/5nano53044.2022.9828925","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828925","url":null,"abstract":"Inkjet printing plays a vital role in the fabrication of medical cloths that are worn by the patients comfortably. For the acquisition of bio-signals out of the body and to extract the parameters such as temperature, pressure, ECG signals etc conductive electrodes or sensors are used. Hence, conductive patterns or layers are needed to be placed over the body for effective acquisition of bio-signals. Recent wearable medical devices have these sensors as conductive patterns which are integrated with the textile or dress material that the patient wear. There are several methods available for the fabrication of such e-textile materials. One such method is the inkjet printing that overcomes the drawbacks of other traditional methods like dip coating, screen printing, knitting and weaving. In this work, we have fabricated an e-textile cloth by means of inkjet printing using nano silver ink and have proven the conductivity of the printed fabric by means of simple circuitry. This work also shows the comparison of fabrication methods of conductive fabrics and the materials used for the fabrication process.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130238611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realization of Si Based Vertical PIN Photodiode Structure in COMSOL Multiphysics COMSOL多物理场中硅基垂直PIN光电二极管结构的实现
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828896
Sanjeev Mani Yadav, A. Pandey
{"title":"Realization of Si Based Vertical PIN Photodiode Structure in COMSOL Multiphysics","authors":"Sanjeev Mani Yadav, A. Pandey","doi":"10.1109/5nano53044.2022.9828896","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828896","url":null,"abstract":"This paper reports a PIN-photodetector modelled and characterized in COMSOL Multiphysics. A highly efficient vertical PIN structure on p-Si substrate has been simulated and the performance of the device measured under broad light ranging from 300-1100 nm. The resultant PIN-Si device shows maximum responsivity of 0.73 A/W for 1010 nm illumination wavelength for 1 V applied bias. The obtained broad optical response i.e., 300-1100 nm along with compact geometry make this device structure an efficient light detector in optical as well as industrial applications.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122875907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Analysis of Silicon Nanowire FET for GAA and Pi Gate Configurations 用于GAA和Pi栅极结构的硅纳米线场效应管性能分析
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828888
S. Deshpande, Shein Sopariwala, Ritvik Singhvi, Raghav Khandelwal, Jigarkumar Marvaniya, R. Parekh
{"title":"Performance Analysis of Silicon Nanowire FET for GAA and Pi Gate Configurations","authors":"S. Deshpande, Shein Sopariwala, Ritvik Singhvi, Raghav Khandelwal, Jigarkumar Marvaniya, R. Parekh","doi":"10.1109/5nano53044.2022.9828888","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828888","url":null,"abstract":"Short channel effects can affect the performance of a transistor wildly depending on the specifics of the component. This paper investigates and studies the performance of specific silicon nanowire field-effect transistors (SiNW FETs) along varying channel length, temperature, and oxide thickness for two different gate configurations: Gate All Around and Pi gate. The performance will be gauged by the I-V characteristics, mid-channel conduction band profile, and mid-channel charge density profile. The simulation has been carried out by a tool named ‘Multi-gate Nanowire FET’. A Nanowire FET’s drain current decreases by increasing the length of the channel and the thickness of oxide, whereas it rises by increasing the temperature. GAA is also seen to have better device control because of its lower leakage current than any other gate and a higher conduction band energy that is 77.94% (at 15 nm) than the Pi gate.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"10 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131391319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Analysis of FinFET based Ternary Inverter 基于FinFET的三元逆变器性能分析
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828879
N. Vinodh Kumar, A. Mohanbabu, Kunal Rasaily, Setti Veera Manikanta
{"title":"Performance Analysis of FinFET based Ternary Inverter","authors":"N. Vinodh Kumar, A. Mohanbabu, Kunal Rasaily, Setti Veera Manikanta","doi":"10.1109/5nano53044.2022.9828879","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828879","url":null,"abstract":"Complex problems have arisen like leakage power and hot electrons causing several drawbacks to the system which tend to affect the efficiency of the system as a whole and the major factor for this problem is the complexity in scaling of the basic transistors. This issue can be prevented or tackled with the implementation of multi-gate transistors. The increase in the number of transistors also tends to increase the circuit complexity of any VLSI chip design thus resulting in the degradation of performance and efficiency of any Binary System. Multi valued logic is seen as the future technology to overcome this issue. The main objective of this work is to analyze performance of FinFET based ternary inverter using T-Spice Simulations.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131521989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extraction of Space Debris Approach: Diminish the Threats from Outer Space 空间碎片提取方法:减少来自外层空间的威胁
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828935
M. Dutta, Md. Ashiqul Islam, Akash Mohajon, Shaikat Dev, Dhonita Tripura, Iftakher Ahmed
{"title":"Extraction of Space Debris Approach: Diminish the Threats from Outer Space","authors":"M. Dutta, Md. Ashiqul Islam, Akash Mohajon, Shaikat Dev, Dhonita Tripura, Iftakher Ahmed","doi":"10.1109/5nano53044.2022.9828935","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828935","url":null,"abstract":"Over the past few decades, Space junk has become one of the major challenges for the peaceful operation of satellites and professional space missions in LEO (low Earth orbit). Debris is a major threat to operational spacecraft; Just a tiny debris also can cause huge damage to various parts of a spacecraft. Moreover, each collision will escalate the debris number. To address the threat of outer space, we have analyzed on how to create them reliable and safe space environment to prevent loss of spacecraft to debris collision. Several space institutions in order to demonstrate key ADR (Active Debris Removal) techniques in a cost-effective ambitious way as well as various contemporary concepts (collective, laser-based, ion-beam shepherd-based, tether-based, sail-based, satellite-based, unconventional, and dynamical systems-based) of debris removal, which is developing at a rapid pace. The article will provide an updated concept for removing the space garbage by capturing the junk objects and using multiple drag sail concepts. The remove debris mission brings a huge opportunity in the area of safe satellite communication and the ultimate goal of a cleaner Earth orbital environment.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134609484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Theoretical Study on Palladium-ZincOxide System 钯-氧化锌体系的理论研究
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828997
RadhaKrishna K Bhagavan NagaSai, B. Suvarna Pooja, K. Meher Preethi, R. Sahithi Arjun, A. Yadav
{"title":"A Theoretical Study on Palladium-ZincOxide System","authors":"RadhaKrishna K Bhagavan NagaSai, B. Suvarna Pooja, K. Meher Preethi, R. Sahithi Arjun, A. Yadav","doi":"10.1109/5nano53044.2022.9828997","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828997","url":null,"abstract":"The Zinc-Oxide unit’s properties will be investigated in combination with studies of Pd-ZnO Crystal lattice. The semi-conductor then will be emulated with software, and subsequent computations also will be performed to learn more about the lattice’s different states and band structure. The computations are carried out at room temperature. The simulation is run on free open-source application Quantum Espresso, written in FORTRAN C. The main goal of this project is to simulate a Pd-ZnO Unit and compare the results to that of ZnO.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"36 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132090996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A review on P3HT:PCBM material based organic solar cells P3HT:PCBM材料基有机太阳能电池研究进展
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO) Pub Date : 2022-04-28 DOI: 10.1109/5nano53044.2022.9828992
S. S, A. V, B. Sivasankari, K. A, G. A, Ajayan. J
{"title":"A review on P3HT:PCBM material based organic solar cells","authors":"S. S, A. V, B. Sivasankari, K. A, G. A, Ajayan. J","doi":"10.1109/5nano53044.2022.9828992","DOIUrl":"https://doi.org/10.1109/5nano53044.2022.9828992","url":null,"abstract":"Photovoltaic cells are used to convert solar energy which is an untapped and surplus energy resource available in nature into electricity. Inorganic material based solar cells are unaffordable as it is costly. Cheap cost and easy fabrication is one of the reasons for increased popularity of organic material based solar cells. Various researches are under progress to enhance the PCE (Power -Conversion Efficiency), stability and lifetime of organic material based solar cells. The type of active layer and its thickness is a major factor in enhancing the performance of OSC (organic solar-cells). This paper reviews P3HT:PCBM active-layer materials and its effects on the stability and performance of OSC.","PeriodicalId":152207,"journal":{"name":"2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116515494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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